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5961-00-679-5290
20 Products
2N174SP
TRANSISTOR
NSN, MFG P/N
5961006795290
NSN
5961-00-679-5290
MFG
GENERAL MOTORS CORP DELCO ELECTRONICS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 2 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
7276207
TRANSISTOR
NSN, MFG P/N
5961006795290
NSN
5961-00-679-5290
MFG
GENERAL MOTORS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 2 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
9072679
TRANSISTOR
NSN, MFG P/N
5961006795290
NSN
5961-00-679-5290
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 2 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
TS1463
TRANSISTOR
NSN, MFG P/N
5961006795290
NSN
5961-00-679-5290
MFG
COOPER INDUSTRIES INC CHAMPION AVIATION PRODUCTS
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 2 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
9137017
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006797390
NSN
5961-00-679-7390
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 9137017
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 18876
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
GA53541L1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006797390
NSN
5961-00-679-7390
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
DESIGN CONTROL REFERENCE: 9137017
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 18876
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N1520
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006798146
NSN
5961-00-679-8146
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
DESIGN CONTROL REFERENCE: 1N1520
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81483
NONDEFINITIVE SPEC/STD DATA: IN1520 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
SV1025
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006798152
NSN
5961-00-679-8152
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
DESIGN CONTROL REFERENCE: SV1025
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 03877
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
67270-1N1512
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006809624
NSN
5961-00-680-9624
67270-1N1512
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006809624
NSN
5961-00-680-9624
MFG
BELL HELICOPTER TEXTRON INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
67270-1N1511
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006809625
NSN
5961-00-680-9625
67270-1N1511
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006809625
NSN
5961-00-680-9625
MFG
BELL HELICOPTER TEXTRON INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
67202-1N253
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006809626
NSN
5961-00-680-9626
67202-1N253
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006809626
NSN
5961-00-680-9626
MFG
BELL HELICOPTER TEXTRON INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
67201-1N649
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006809627
NSN
5961-00-680-9627
67201-1N649
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006809627
NSN
5961-00-680-9627
MFG
BELL HELICOPTER TEXTRON INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2N368
TRANSISTOR
NSN, MFG P/N
5961006809683
NSN
5961-00-680-9683
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 20.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.315 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH: 0.215 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
16T6
TRANSISTOR
NSN, MFG P/N
5961006809684
NSN
5961-00-680-9684
MFG
PHILIPS ELECTRONICS NORTH AMERICA CORPORATION DBA PHILIPS MEDICAL SYSTEMS CMS DIV HEALTHCARE SOLUTIONS GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 100.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES MAXIMUM
OVERALL WIDTH: 0.190 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 180.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR O
Related Searches:
2N228
TRANSISTOR
NSN, MFG P/N
5961006809684
NSN
5961-00-680-9684
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 100.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES MAXIMUM
OVERALL WIDTH: 0.190 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 180.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR O
Related Searches:
1N1886
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006809741
NSN
5961-00-680-9741
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1886 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1N305
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006809744
NSN
5961-00-680-9744
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1671 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2N424
TRANSISTOR
NSN, MFG P/N
5961006809745
NSN
5961-00-680-9745
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-2N424 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
1N338
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006809746
NSN
5961-00-680-9746
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: NO. 1N338 TYPE
OVERALL DIAMETER: 0.438 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
SM-B-397806
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961006809885
NSN
5961-00-680-9885
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.250 INCHES MAXIMUM 1ST SEMICONDUCTOR DEVICE DIODE 0.250 INCHES MAXIMUM 2ND SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.500 INCHES MAXIMUM 1ST SEMICONDUCTOR DEVICE DIODE 0.500 INCHES MAXIMUM 2ND SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ZENER TEST 18V P/M 1 PCT AT 5 MILLIAMPS.
TERMINAL LENGTH: 1.062 INCHES MINIMUM 1ST SEMICONDUCTOR DEVICE DIODE 1.062 INCHES MINIMUM 2ND SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 PIN 1ST SEMICONDUCTOR DEVICE DIODE 2 PIN 2ND SEMICONDUCTOR DEVICE DIODE
