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5961-00-110-0776
20 Products
720051
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961001100776
NSN
5961-00-110-0776
MFG
SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV
Description
SEMICONDUCTOR DEVIC
Related Searches:
6094041-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001090011
NSN
5961-00-109-0011
6094041-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001090011
NSN
5961-00-109-0011
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 03640-6094041 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MANUFACTURERS CODE: 03640
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 6094041-1
MOUNTING METHOD: THREADED HOLE
OVERALL HEIGHT: 0.950 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
652-431-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001090011
NSN
5961-00-109-0011
652-431-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001090011
NSN
5961-00-109-0011
MFG
MICRO USPD INC
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 03640-6094041 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MANUFACTURERS CODE: 03640
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 6094041-1
MOUNTING METHOD: THREADED HOLE
OVERALL HEIGHT: 0.950 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
6093588
TRANSISTOR
NSN, MFG P/N
5961001090015
NSN
5961-00-109-0015
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
CURRENT RATING PER CHARACTERISTIC: 0.05 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 10.00 MICROAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.615 INCHES MAXIMUM
OVERALL LENGTH: 1.247 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 03640-6093588 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -9.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE,
Related Searches:
SDT5929
TRANSISTOR
NSN, MFG P/N
5961001090015
NSN
5961-00-109-0015
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.05 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 10.00 MICROAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.615 INCHES MAXIMUM
OVERALL LENGTH: 1.247 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 03640-6093588 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -9.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE,
Related Searches:
353-3671-010
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001090421
NSN
5961-00-109-0421
353-3671-010
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001090421
NSN
5961-00-109-0421
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES PEAK REVERSE SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.813 INCHES MAXIMUM
OVERALL LENGTH: 2.275 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE
Related Searches:
SA1382
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001090421
NSN
5961-00-109-0421
SA1382
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001090421
NSN
5961-00-109-0421
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES PEAK REVERSE SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.813 INCHES MAXIMUM
OVERALL LENGTH: 2.275 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE
Related Searches:
580R096H07
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001090600
NSN
5961-00-109-0600
580R096H07
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001090600
NSN
5961-00-109-0600
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND GOLD PLATED LEADS
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 210.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
UZ5664
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001090600
NSN
5961-00-109-0600
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND GOLD PLATED LEADS
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 210.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
324144
TRANSISTOR
NSN, MFG P/N
5961001090636
NSN
5961-00-109-0636
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
380-0050-000
TRANSISTOR
NSN, MFG P/N
5961001092074
NSN
5961-00-109-2074
MFG
HARRIS CORPORATION DBA HARRIS BROADCAST TRANSMISSION DIVISION DIV BROADCAST COMMUNICATIONS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 700.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
40317
TRANSISTOR
NSN, MFG P/N
5961001092074
NSN
5961-00-109-2074
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 700.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
10-28008
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001092878
NSN
5961-00-109-2878
MFG
MICROWAVE DEVELOPMENT LABORATORIES INC. DBA MDL
Description
INPUT CONTACT TYPE: MALE
INPUT TERMINAL TYPE: ELECTRICAL CONTACT
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 144-033-0002
OPERATING FREQUENCY: NOT RATED
OUTPUT TERMINAL TYPE: ANY ACCEPTABLE
OVERALL DIAMETER: 0.440 INCHES NOMINAL
OVERALL LENGTH: 0.845 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
Related Searches:
144-033-0002
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001092878
NSN
5961-00-109-2878
144-033-0002
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001092878
NSN
5961-00-109-2878
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS
Description
INPUT CONTACT TYPE: MALE
INPUT TERMINAL TYPE: ELECTRICAL CONTACT
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 144-033-0002
OPERATING FREQUENCY: NOT RATED
OUTPUT TERMINAL TYPE: ANY ACCEPTABLE
OVERALL DIAMETER: 0.440 INCHES NOMINAL
OVERALL LENGTH: 0.845 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
Related Searches:
45XV714
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001100252
NSN
5961-00-110-0252
45XV714
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001100252
NSN
5961-00-110-0252
MFG
CONDITIONING SEMICONDUCTOR DEVICES CORP /CSDC/
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 15.0 DEG CELSIUS
OVERALL DIAMETER: 1.125 INCHES NOMINAL
OVERALL HEIGHT: 0.520 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
720681-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001100252
NSN
5961-00-110-0252
720681-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001100252
NSN
5961-00-110-0252
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 15.0 DEG CELSIUS
OVERALL DIAMETER: 1.125 INCHES NOMINAL
OVERALL HEIGHT: 0.520 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
SCBR20A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001100252
NSN
5961-00-110-0252
SCBR20A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001100252
NSN
5961-00-110-0252
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 15.0 DEG CELSIUS
OVERALL DIAMETER: 1.125 INCHES NOMINAL
OVERALL HEIGHT: 0.520 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
5550385
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001100547
NSN
5961-00-110-0547
MFG
SIERRA DETROIT DIESEL ALLISON DBA STEWART & STEVENSON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
720041
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001100775
NSN
5961-00-110-0775
720041
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001100775
NSN
5961-00-110-0775
MFG
SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-94
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.030 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
C50BX321
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001100775
NSN
5961-00-110-0775
C50BX321
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001100775
NSN
5961-00-110-0775
MFG
GENERAL ELECTRIC CO CAPACITORS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-94
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.030 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
