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5961-00-772-9046

20 Products

1N1353A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007729046

NSN

5961-00-772-9046

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1N1353A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007729046

NSN

5961-00-772-9046

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 155.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2215 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1661298

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007729067

NSN

5961-00-772-9067

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1661298

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007729067

NSN

5961-00-772-9067

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

DESIGN CONTROL REFERENCE: 1661298
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 10001
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
THE MANUFACTURERS DATA:

2N682

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007729067

NSN

5961-00-772-9067

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2N682

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007729067

NSN

5961-00-772-9067

MFG

TEXAS INSTRUMENTS INC INFORMATION TECHNOLOGY GROUP

Description

DESIGN CONTROL REFERENCE: 1661298
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 10001
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
THE MANUFACTURERS DATA:

5800583-929001-101

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007729067

NSN

5961-00-772-9067

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5800583-929001-101

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007729067

NSN

5961-00-772-9067

MFG

EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6

Description

DESIGN CONTROL REFERENCE: 1661298
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 10001
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
THE MANUFACTURERS DATA:

9158189

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007729067

NSN

5961-00-772-9067

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9158189

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007729067

NSN

5961-00-772-9067

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

DESIGN CONTROL REFERENCE: 1661298
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 10001
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
THE MANUFACTURERS DATA:

C35F

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007729067

NSN

5961-00-772-9067

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C35F

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007729067

NSN

5961-00-772-9067

MFG

GENERAL ELECTRIC CO

Description

DESIGN CONTROL REFERENCE: 1661298
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 10001
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
THE MANUFACTURERS DATA:

C35FX562

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007729067

NSN

5961-00-772-9067

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C35FX562

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007729067

NSN

5961-00-772-9067

MFG

GENERAL ELECTRIC CO HOTPOINT DEPT OF APPLIANCE AND MERCHANDISE GROUP

Description

DESIGN CONTROL REFERENCE: 1661298
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 10001
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
THE MANUFACTURERS DATA:

CM50024-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007729067

NSN

5961-00-772-9067

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CM50024-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007729067

NSN

5961-00-772-9067

MFG

BOGUE ELECTRIC MANUFACTURING CO

Description

DESIGN CONTROL REFERENCE: 1661298
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 10001
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
THE MANUFACTURERS DATA:

222-115

HOLDER

NSN, MFG P/N

5961007730108

NSN

5961-00-773-0108

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222-115

HOLDER

NSN, MFG P/N

5961007730108

NSN

5961-00-773-0108

MFG

GENERAL INSTRUMENT CORPORATION DBA MOTOROLA DIV CONNECTED HOME SOLUTION

2W1721

TRANSISTOR

NSN, MFG P/N

5961007732412

NSN

5961-00-773-2412

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2W1721

TRANSISTOR

NSN, MFG P/N

5961007732412

NSN

5961-00-773-2412

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: MOUNTING HARDWARE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 97942-576R994 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLE

576R994H04

TRANSISTOR

NSN, MFG P/N

5961007732412

NSN

5961-00-773-2412

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576R994H04

TRANSISTOR

NSN, MFG P/N

5961007732412

NSN

5961-00-773-2412

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: MOUNTING HARDWARE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 97942-576R994 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLE

SP1043

TRANSISTOR

NSN, MFG P/N

5961007732412

NSN

5961-00-773-2412

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SP1043

TRANSISTOR

NSN, MFG P/N

5961007732412

NSN

5961-00-773-2412

MFG

RAYTHEON COMPANY

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: MOUNTING HARDWARE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 97942-576R994 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLE

ST4494-4

TRANSISTOR

NSN, MFG P/N

5961007732412

NSN

5961-00-773-2412

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ST4494-4

TRANSISTOR

NSN, MFG P/N

5961007732412

NSN

5961-00-773-2412

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: MOUNTING HARDWARE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 97942-576R994 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLE

TB1045

TRANSISTOR

NSN, MFG P/N

5961007732412

NSN

5961-00-773-2412

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TB1045

TRANSISTOR

NSN, MFG P/N

5961007732412

NSN

5961-00-773-2412

MFG

MICRO USPD INC

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: MOUNTING HARDWARE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 97942-576R994 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLE

1N2030

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007732458

NSN

5961-00-773-2458

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1N2030

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007732458

NSN

5961-00-773-2458

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, PEAK

575R570H12

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007732458

NSN

5961-00-773-2458

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575R570H12

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007732458

NSN

5961-00-773-2458

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, PEAK

M71-25

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007733845

NSN

5961-00-773-3845

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M71-25

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007733845

NSN

5961-00-773-3845

MFG

ANDREA ELECTRONICS CORPORATION

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: FRICTION FASTENER
DESIGN CONTROL REFERENCE: M71-25
MANUFACTURERS CODE: 03487
MATERIAL: COPPER ALLOY
MATERIAL DOCUMENT AND CLASSIFICATION: QQ-C-576 FED SPEC SINGLE MATERIAL RESPONSE
MOUNTING FACILITY TYPE AND QUANTITY: 1 UNTHREADED HOLE SINGLE MOUNTING FACILITY
OVERALL HEIGHT: 0.218 INCHES NOMINAL
OVERALL LENGTH: 0.536 INCHES NOMINAL
OVERALL WIDTH: 0.422 INCHES NOMINAL
STYLE DESIGNATOR: 12C IRREGULAR
SURFACE TREATMENT: CADMIUM AND CHROMATE
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: QQ-P-416,TY 2,CL 2 FED SPEC 1ST TREATMENT RESPONSE
THE MANUFACTURERS DATA:
UNTHREADED MOUNTING HOLE DIAMETER: 0.106 INCHES NOMINAL SINGLE MOUNTING FACILITY

1N1317A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007736085

NSN

5961-00-773-6085

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1N1317A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007736085

NSN

5961-00-773-6085

MFG

N A P SMD TECHNOLOGY INC

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MICROAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.5 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N1317AA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007736085

NSN

5961-00-773-6085

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1N1317AA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007736085

NSN

5961-00-773-6085

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MICROAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.5 MAXIMUM NOMINAL REGULATOR VOLTAGE

479-0345-003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007736085

NSN

5961-00-773-6085

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479-0345-003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007736085

NSN

5961-00-773-6085

MFG

ROCKWELL INTERNATIONAL CORP NORTH AMERICAN AIRCRAFT OPNS

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MICROAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.5 MAXIMUM NOMINAL REGULATOR VOLTAGE