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5961-00-007-1901
20 Products
190016P5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000071901
NSN
5961-00-007-1901
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
2N4371A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000070736
NSN
5961-00-007-0736
2N4371A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000070736
NSN
5961-00-007-0736
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL DIAMETER: 1.227 INCHES MAXIMUM
OVERALL LENGTH: 1.810 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5386 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
5039-680
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000070736
NSN
5961-00-007-0736
5039-680
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000070736
NSN
5961-00-007-0736
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL DIAMETER: 1.227 INCHES MAXIMUM
OVERALL LENGTH: 1.810 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5386 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
2N4989
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000070737
NSN
5961-00-007-0737
2N4989
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000070737
NSN
5961-00-007-0737
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5472 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.095 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
723099-39
TRANSISTOR
NSN, MFG P/N
5961000070748
NSN
5961-00-007-0748
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
SF9203
TRANSISTOR
NSN, MFG P/N
5961000070748
NSN
5961-00-007-0748
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
168-1021-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000070769
NSN
5961-00-007-0769
168-1021-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000070769
NSN
5961-00-007-0769
MFG
NCR CORP POWER SYSTEMS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.235 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.226 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
168-1021-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000070769
NSN
5961-00-007-0769
168-1021-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000070769
NSN
5961-00-007-0769
MFG
GE AVIATIONS SYSTEMS LLC DBA GE AVIATION DIV ELECTRICAL POWER-POMPANO
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.235 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.226 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
5039-507
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000070769
NSN
5961-00-007-0769
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.235 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.226 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
S08009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000070769
NSN
5961-00-007-0769
MFG
SEMICON COMPONENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.235 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.226 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
SS6227
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000070769
NSN
5961-00-007-0769
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.235 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.226 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
168-1024-003
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000070770
NSN
5961-00-007-0770
168-1024-003
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000070770
NSN
5961-00-007-0770
MFG
NCR CORP POWER SYSTEMS DIV
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
MATERIAL: SILICON
OVERALL HEIGHT: 0.420 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE
Related Searches:
SC3BA1M
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000070770
NSN
5961-00-007-0770
SC3BA1M
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000070770
NSN
5961-00-007-0770
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
MATERIAL: SILICON
OVERALL HEIGHT: 0.420 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE
Related Searches:
013-232
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000070823
NSN
5961-00-007-0823
MFG
AMPEX DATA SYSTEMS CORP COMPUTER PRODUCTS DIV
Description
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
013-310
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000070824
NSN
5961-00-007-0824
MFG
AMPEX DATA SYSTEMS CORP COMPUTER PRODUCTS DIV
Description
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
013-729
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000070826
NSN
5961-00-007-0826
MFG
AMPEX DATA SYSTEMS CORP COMPUTER PRODUCTS DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
013-892
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000070827
NSN
5961-00-007-0827
MFG
AMPEX DATA SYSTEMS CORP COMPUTER PRODUCTS DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
580-040
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000070897
NSN
5961-00-007-0897
580-040
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000070897
NSN
5961-00-007-0897
MFG
AMPEX DATA SYSTEMS CORP COMPUTER PRODUCTS DIV
Description
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL HEIGHT: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD
Related Searches:
300957-200
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000070898
NSN
5961-00-007-0898
300957-200
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000070898
NSN
5961-00-007-0898
MFG
RICHARDS IMAGERY INTERPRETATION SYSTEMS L.L.C.
Description
OVERALL HEIGHT: 0.175 INCHES NOMINAL
OVERALL LENGTH: 0.380 INCHES NOMINAL
OVERALL WIDTH: 0.350 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD
Related Searches:
A01101-200
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000070898
NSN
5961-00-007-0898
A01101-200
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000070898
NSN
5961-00-007-0898
MFG
TECCOR ELECTRONICS INC SEMICONDUCTOR DIV SUB OF RANCO
Description
OVERALL HEIGHT: 0.175 INCHES NOMINAL
OVERALL LENGTH: 0.380 INCHES NOMINAL
OVERALL WIDTH: 0.350 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD
