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5961-00-805-7876

20 Products

1N2166A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057876

NSN

5961-00-805-7876

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1N2166A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057876

NSN

5961-00-805-7876

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2505 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.4 MAXIMUM NOMINAL REGULATOR VOLTAGE

152-0011-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057870

NSN

5961-00-805-7870

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152-0011-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057870

NSN

5961-00-805-7870

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2070 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N2070

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057870

NSN

5961-00-805-7870

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1N2070

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057870

NSN

5961-00-805-7870

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2070 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

353-1774-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057870

NSN

5961-00-805-7870

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353-1774-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057870

NSN

5961-00-805-7870

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2070 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

X5A4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057870

NSN

5961-00-805-7870

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X5A4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057870

NSN

5961-00-805-7870

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2070 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

11-09990-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057871

NSN

5961-00-805-7871

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11-09990-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057871

NSN

5961-00-805-7871

MFG

COMPAQ FEDERAL LLC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 07187
MFR SOURCE CONTROLLING REFERENCE: 2503687-212
NONDEFINITIVE SPEC/STD DATA: 1N757A TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N757A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057871

NSN

5961-00-805-7871

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1N757A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057871

NSN

5961-00-805-7871

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 07187
MFR SOURCE CONTROLLING REFERENCE: 2503687-212
NONDEFINITIVE SPEC/STD DATA: 1N757A TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

2503687-212

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057871

NSN

5961-00-805-7871

View More Info

2503687-212

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057871

NSN

5961-00-805-7871

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 07187
MFR SOURCE CONTROLLING REFERENCE: 2503687-212
NONDEFINITIVE SPEC/STD DATA: 1N757A TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

353-2722-000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057871

NSN

5961-00-805-7871

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353-2722-000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057871

NSN

5961-00-805-7871

MFG

ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 07187
MFR SOURCE CONTROLLING REFERENCE: 2503687-212
NONDEFINITIVE SPEC/STD DATA: 1N757A TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

44371 50216

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057871

NSN

5961-00-805-7871

View More Info

44371 50216

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057871

NSN

5961-00-805-7871

MFG

THALES DEFENCE DEUTSCHLAND GMBH

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 07187
MFR SOURCE CONTROLLING REFERENCE: 2503687-212
NONDEFINITIVE SPEC/STD DATA: 1N757A TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

521-024-024

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057871

NSN

5961-00-805-7871

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521-024-024

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057871

NSN

5961-00-805-7871

MFG

ELETTRONICA SPA

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 07187
MFR SOURCE CONTROLLING REFERENCE: 2503687-212
NONDEFINITIVE SPEC/STD DATA: 1N757A TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

DZ760624H

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057871

NSN

5961-00-805-7871

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DZ760624H

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057871

NSN

5961-00-805-7871

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 07187
MFR SOURCE CONTROLLING REFERENCE: 2503687-212
NONDEFINITIVE SPEC/STD DATA: 1N757A TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

E2650-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057871

NSN

5961-00-805-7871

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E2650-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057871

NSN

5961-00-805-7871

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 07187
MFR SOURCE CONTROLLING REFERENCE: 2503687-212
NONDEFINITIVE SPEC/STD DATA: 1N757A TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

SZG218-212

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057871

NSN

5961-00-805-7871

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SZG218-212

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057871

NSN

5961-00-805-7871

MFG

FREESCALE SEMICONDUCTOR INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 07187
MFR SOURCE CONTROLLING REFERENCE: 2503687-212
NONDEFINITIVE SPEC/STD DATA: 1N757A TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

11-04860-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057873

NSN

5961-00-805-7873

View More Info

11-04860-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057873

NSN

5961-00-805-7873

MFG

COMPAQ FEDERAL LLC

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2491 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N746A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057873

NSN

5961-00-805-7873

View More Info

1N746A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057873

NSN

5961-00-805-7873

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2491 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE

2088809-0002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057873

NSN

5961-00-805-7873

View More Info

2088809-0002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057873

NSN

5961-00-805-7873

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2491 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE

245-617

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057873

NSN

5961-00-805-7873

View More Info

245-617

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057873

NSN

5961-00-805-7873

MFG

CAE INC

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2491 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE

4433850

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057873

NSN

5961-00-805-7873

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4433850

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057873

NSN

5961-00-805-7873

MFG

KONGSBERG DEFENCE & AEROSPACE AS

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2491 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE

44371 50205

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057873

NSN

5961-00-805-7873

View More Info

44371 50205

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008057873

NSN

5961-00-805-7873

MFG

THALES DEFENCE DEUTSCHLAND GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2491 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE