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5961-00-007-7463
20 Products
2N2985
TRANSISTOR
NSN, MFG P/N
5961000077463
NSN
5961-00-007-7463
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.340 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE4401 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 155.0 MAXIMUM BR
Related Searches:
2N5544
TRANSISTOR
NSN, MFG P/N
5961000077465
NSN
5961-00-007-7465
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.315 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5856 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
380-0145-000
TRANSISTOR
NSN, MFG P/N
5961000077465
NSN
5961-00-007-7465
MFG
HARRIS CORPORATION DBA HARRIS BROADCAST TRANSMISSION DIVISION DIV BROADCAST COMMUNICATIONS DIVISION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.315 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5856 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
JANTX2N4440
TRANSISTOR
NSN, MFG P/N
5961000077475
NSN
5961-00-007-7475
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N4440
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-341
OVERALL LENGTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.420 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.6 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-19500/341 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION_!!
Related Searches:
1N4764
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000077495
NSN
5961-00-007-7495
MFG
COMMUNICATIONS & POWER INDUSTRIES INC DBA TRAVELING WAVE TECHNOLOGY DIVISION DIV MICROWAVE POWER TUBE PRODUCTS
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DESIGN CONTROL REFERENCE: 66-304-764
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 99313
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
268011
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000077596
NSN
5961-00-007-7596
268011
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000077596
NSN
5961-00-007-7596
MFG
FLUKE CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -20.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-77
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.338 INCHES MINIMUM
OVERALL HEIGHT: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.238 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 224.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 45.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
MD5029
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000077596
NSN
5961-00-007-7596
MD5029
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000077596
NSN
5961-00-007-7596
MFG
SOLITRON DEVICES INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -20.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-77
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.338 INCHES MINIMUM
OVERALL HEIGHT: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.238 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 224.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 45.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
MU698
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000077596
NSN
5961-00-007-7596
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -20.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-77
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.338 INCHES MINIMUM
OVERALL HEIGHT: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.238 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 224.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 45.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
T1483
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000077596
NSN
5961-00-007-7596
MFG
COHERENT COMPONENT CORP STANDARD RECTIFIER DIV
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -20.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-77
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.338 INCHES MINIMUM
OVERALL HEIGHT: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.238 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 224.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 45.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
1N3323RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000077659
NSN
5961-00-007-7659
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1760.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3323RB
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD AND TERMINAL
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/358
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
TH
Related Searches:
JAN1N3323RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000077659
NSN
5961-00-007-7659
JAN1N3323RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000077659
NSN
5961-00-007-7659
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1760.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3323RB
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD AND TERMINAL
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/358
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
TH
Related Searches:
110077
TRANSISTOR
NSN, MFG P/N
5961000077671
NSN
5961-00-007-7671
MFG
BADGER/TTI A UNIT OF GENERAL SIGNAL CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 87.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS
Related Searches:
MJ481
TRANSISTOR
NSN, MFG P/N
5961000077671
NSN
5961-00-007-7671
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 87.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS
Related Searches:
10939-194
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000077672
NSN
5961-00-007-7672
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 9.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1902-3171
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000077672
NSN
5961-00-007-7672
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 9.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
CD35718
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000077672
NSN
5961-00-007-7672
MFG
TELCOM SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 9.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
DZ730819U
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000077672
NSN
5961-00-007-7672
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 9.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
FZ7264
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000077672
NSN
5961-00-007-7672
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 9.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SZ10939-194
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000077672
NSN
5961-00-007-7672
SZ10939-194
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000077672
NSN
5961-00-007-7672
MFG
O & S RESEARCH INC
Description
CURRENT RATING PER CHARACTERISTIC: 9.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1902-3262
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000077673
NSN
5961-00-007-7673
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.9 MAXIMUM NOMINAL REGULATOR VOLTAGE
