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5961-00-933-6323
20 Products
7618403P0009
TRANSISTOR
NSN, MFG P/N
5961009336323
NSN
5961-00-933-6323
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 99971-7618403P9 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 80.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 60.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
10669617
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009334989
NSN
5961-00-933-4989
10669617
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009334989
NSN
5961-00-933-4989
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
SPECIAL FEATURES: SILICON MOLDED ASSEMBLY;SINGLE-PHASE FULL WAVE BRIDGE;0.625 IN. H;1.400 IN. LG;4 SOLDER LUG TERMINALS
Related Searches:
18400-6
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009334989
NSN
5961-00-933-4989
18400-6
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009334989
NSN
5961-00-933-4989
MFG
SIMPLEX INC.
Description
SPECIAL FEATURES: SILICON MOLDED ASSEMBLY;SINGLE-PHASE FULL WAVE BRIDGE;0.625 IN. H;1.400 IN. LG;4 SOLDER LUG TERMINALS
Related Searches:
343-253-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009334989
NSN
5961-00-933-4989
343-253-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009334989
NSN
5961-00-933-4989
MFG
INTERSTATE ELECTRONICS CORPORATION
Description
SPECIAL FEATURES: SILICON MOLDED ASSEMBLY;SINGLE-PHASE FULL WAVE BRIDGE;0.625 IN. H;1.400 IN. LG;4 SOLDER LUG TERMINALS
Related Searches:
50-6713
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009334989
NSN
5961-00-933-4989
50-6713
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009334989
NSN
5961-00-933-4989
MFG
MAGTROL INC.
Description
SPECIAL FEATURES: SILICON MOLDED ASSEMBLY;SINGLE-PHASE FULL WAVE BRIDGE;0.625 IN. H;1.400 IN. LG;4 SOLDER LUG TERMINALS
Related Searches:
5257-51
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009334989
NSN
5961-00-933-4989
5257-51
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009334989
NSN
5961-00-933-4989
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SPECIAL FEATURES: SILICON MOLDED ASSEMBLY;SINGLE-PHASE FULL WAVE BRIDGE;0.625 IN. H;1.400 IN. LG;4 SOLDER LUG TERMINALS
Related Searches:
E814-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009334989
NSN
5961-00-933-4989
E814-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009334989
NSN
5961-00-933-4989
MFG
SOLITRON DEVICES INC.
Description
SPECIAL FEATURES: SILICON MOLDED ASSEMBLY;SINGLE-PHASE FULL WAVE BRIDGE;0.625 IN. H;1.400 IN. LG;4 SOLDER LUG TERMINALS
Related Searches:
FV07741
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009334989
NSN
5961-00-933-4989
FV07741
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009334989
NSN
5961-00-933-4989
MFG
SIMOCO EUROPE LTD
Description
SPECIAL FEATURES: SILICON MOLDED ASSEMBLY;SINGLE-PHASE FULL WAVE BRIDGE;0.625 IN. H;1.400 IN. LG;4 SOLDER LUG TERMINALS
Related Searches:
JHP95-139
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009334989
NSN
5961-00-933-4989
JHP95-139
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009334989
NSN
5961-00-933-4989
MFG
HOLLINGSWORTH JOHN R CO
Description
SPECIAL FEATURES: SILICON MOLDED ASSEMBLY;SINGLE-PHASE FULL WAVE BRIDGE;0.625 IN. H;1.400 IN. LG;4 SOLDER LUG TERMINALS
Related Searches:
MDA952-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009334989
NSN
5961-00-933-4989
MDA952-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009334989
NSN
5961-00-933-4989
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SPECIAL FEATURES: SILICON MOLDED ASSEMBLY;SINGLE-PHASE FULL WAVE BRIDGE;0.625 IN. H;1.400 IN. LG;4 SOLDER LUG TERMINALS
Related Searches:
S57-7914
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009334989
NSN
5961-00-933-4989
S57-7914
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009334989
NSN
5961-00-933-4989
MFG
PSI-PERIPHERAL SUPPORT
Description
SPECIAL FEATURES: SILICON MOLDED ASSEMBLY;SINGLE-PHASE FULL WAVE BRIDGE;0.625 IN. H;1.400 IN. LG;4 SOLDER LUG TERMINALS
Related Searches:
386M0087P001
TRANSISTOR
NSN, MFG P/N
5961009335280
NSN
5961-00-933-5280
MFG
RAYTHEON CO MISSILE SYSTEMS DIV LOWELL PLANT
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
A17144-021
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961009335766
NSN
5961-00-933-5766
A17144-021
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961009335766
NSN
5961-00-933-5766
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
III END ITEM IDENTIFICATION: AUTOMATIC TEST EQUIPMENT (ATE)
Related Searches:
6052-135
TRANSISTOR
NSN, MFG P/N
5961009336318
NSN
5961-00-933-6318
MFG
RECON/OPTICAL INC .
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N2102
TRANSISTOR
NSN, MFG P/N
5961009336319
NSN
5961-00-933-6319
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1250.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 65.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
6254-243
TRANSISTOR
NSN, MFG P/N
5961009336319
NSN
5961-00-933-6319
MFG
RECON/OPTICAL INC .
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1250.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 65.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
7618494P0001
TRANSISTOR
NSN, MFG P/N
5961009336320
NSN
5961-00-933-6320
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.395 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
84SL248
TRANSISTOR
NSN, MFG P/N
5961009336320
NSN
5961-00-933-6320
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.395 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
7618490P0002
TRANSISTOR
NSN, MFG P/N
5961009336321
NSN
5961-00-933-6321
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL LENGTH: 1.315 INCHES MINIMUM AND 1.555 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.865 INCHES MINIMUM AND 0.890 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 99971-7618490P2 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 1 WIRE HOOK AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, D
Related Searches:
86SV031
TRANSISTOR
NSN, MFG P/N
5961009336321
NSN
5961-00-933-6321
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL LENGTH: 1.315 INCHES MINIMUM AND 1.555 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.865 INCHES MINIMUM AND 0.890 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 99971-7618490P2 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 1 WIRE HOOK AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, D
