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5961-00-294-9188

20 Products

2271273-0001

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961002949188

NSN

5961-00-294-9188

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2271273-0001

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961002949188

NSN

5961-00-294-9188

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 32.00 AMPERES PEAK FORWARD SURGE CURRENT AND 600.00 MICROAMPERES REVERSE CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE AND 140.0 SOURCE SUPPLY VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: S-3 ACFT
MANUFACTURERS CODE: 55972
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 2271273-0001
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
OVERALL WIDTH: 0.265 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: INSPECTED BY PROCEDURE OF MIL-S-19500/446.
TERMINAL TYPE AND QUANTITY: 4 PIN

2N4393

TRANSISTOR

NSN, MFG P/N

5961002881906

NSN

5961-00-288-1906

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2N4393

TRANSISTOR

NSN, MFG P/N

5961002881906

NSN

5961-00-288-1906

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 07421
MFR SOURCE CONTROLLING REFERENCE: T060-301-0001
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

T060-301-0001

TRANSISTOR

NSN, MFG P/N

5961002881906

NSN

5961-00-288-1906

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T060-301-0001

TRANSISTOR

NSN, MFG P/N

5961002881906

NSN

5961-00-288-1906

MFG

INTERSTATE ELECTRONICS CORPORATION

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 07421
MFR SOURCE CONTROLLING REFERENCE: T060-301-0001
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

581R413H01

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961002885940

NSN

5961-00-288-5940

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581R413H01

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961002885940

NSN

5961-00-288-5940

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

DESIGN CONTROL REFERENCE: 581R413H01
MANUFACTURERS CODE: 97942
OVERALL HEIGHT: 0.295 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.700 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: PNP TRANSISTORS; PIN LEADS
THE MANUFACTURERS DATA:

SJ3821H

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961002885940

NSN

5961-00-288-5940

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SJ3821H

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961002885940

NSN

5961-00-288-5940

MFG

FREESCALE SEMICONDUCTOR INC.

Description

DESIGN CONTROL REFERENCE: 581R413H01
MANUFACTURERS CODE: 97942
OVERALL HEIGHT: 0.295 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.700 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: PNP TRANSISTORS; PIN LEADS
THE MANUFACTURERS DATA:

A227

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002889582

NSN

5961-00-288-9582

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A227

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002889582

NSN

5961-00-288-9582

MFG

GOODRICH CORPORATION DBA GOODRICH PUMP ENG CTRL SYSTEMS DIV GOODRICH PUMP& ENGINE CONTROL SYSTEMS INC.

2N6166

TRANSISTOR

NSN, MFG P/N

5961002901880

NSN

5961-00-290-1880

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2N6166

TRANSISTOR

NSN, MFG P/N

5961002901880

NSN

5961-00-290-1880

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 9.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 2N6166
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 04713
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.610 INCHES MAXIMUM
OVERALL WIDTH: 0.393 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 117.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

003475-15

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002905903

NSN

5961-00-290-5903

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003475-15

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002905903

NSN

5961-00-290-5903

MFG

GOODRICH ACTUATION SYSTEMS LTD

1S2110A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002905903

NSN

5961-00-290-5903

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1S2110A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002905903

NSN

5961-00-290-5903

MFG

RAYTHEON SYSTEMS LTD WEAPONS SUPPORT GROUP

1901-0499

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002907357

NSN

5961-00-290-7357

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1901-0499

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002907357

NSN

5961-00-290-7357

MFG

AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER

SR2080-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002907357

NSN

5961-00-290-7357

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SR2080-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002907357

NSN

5961-00-290-7357

MFG

FREESCALE SEMICONDUCTOR INC.

2N5132

TRANSISTOR

NSN, MFG P/N

5961002936284

NSN

5961-00-293-6284

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2N5132

TRANSISTOR

NSN, MFG P/N

5961002936284

NSN

5961-00-293-6284

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.222 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5546 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

4816-07-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002943016

NSN

5961-00-294-3016

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4816-07-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002943016

NSN

5961-00-294-3016

MFG

L-3 COMMUNICATIONS CINCINNATI ELECTRONICS CORPORATION

Description

DESIGN CONTROL REFERENCE: 4816-07-5
MANUFACTURERS CODE: 80045
OVERALL HEIGHT: 0.210 INCHES NOMINAL
OVERALL LENGTH: 0.325 INCHES NOMINAL
OVERALL WIDTH: 0.210 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

372622

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002943018

NSN

5961-00-294-3018

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372622

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002943018

NSN

5961-00-294-3018

MFG

L-3 COMMUNICATIONS CINCINNATI ELECTRONICS CORPORATION

Description

DESIGN CONTROL REFERENCE: 372622
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 80045
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

472-0219-002

TRANSISTOR

NSN, MFG P/N

5961002944149

NSN

5961-00-294-4149

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472-0219-002

TRANSISTOR

NSN, MFG P/N

5961002944149

NSN

5961-00-294-4149

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 472-0219-002
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: NAVORD OD41152

479-0381-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002944150

NSN

5961-00-294-4150

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479-0381-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002944150

NSN

5961-00-294-4150

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 479-0969-001
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: NAVORD OD41152

479-0519-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002944151

NSN

5961-00-294-4151

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479-0519-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002944151

NSN

5961-00-294-4151

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 479-0519-002
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: NAVORD OD41152

479-0693-003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002944153

NSN

5961-00-294-4153

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479-0693-003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002944153

NSN

5961-00-294-4153

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 479-0693-003
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: NAVORD OD41152
THE MANUFACTURERS DATA:

720605-002

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961002944952

NSN

5961-00-294-4952

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720605-002

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961002944952

NSN

5961-00-294-4952

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25000.0 NONREPETITIVE PEAK REVERSE VOLTAGE AND 12500.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 2.250 INCHES MAXIMUM
OVERALL LENGTH: 13.250 INCHES MAXIMUM
OVERALL WIDTH: 4.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 THREADED STUD

SA3483

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961002944952

NSN

5961-00-294-4952

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SA3483

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961002944952

NSN

5961-00-294-4952

MFG

SEMTECH CORPORATION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25000.0 NONREPETITIVE PEAK REVERSE VOLTAGE AND 12500.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 2.250 INCHES MAXIMUM
OVERALL LENGTH: 13.250 INCHES MAXIMUM
OVERALL WIDTH: 4.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 THREADED STUD