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5961-01-010-8789

20 Products

879999-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010108789

NSN

5961-01-010-8789

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879999-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010108789

NSN

5961-01-010-8789

MFG

RAYTHEON COMPANY

Description

DESIGN CONTROL REFERENCE: 14909
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01295
MOUNTING METHOD: CLIP
OVERALL DIAMETER: 0.083 INCHES MAXIMUM
OVERALL LENGTH: 0.034 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL TYPE AND QUANTITY: 1 FERRULE
THE MANUFACTURERS DATA:

19A115413P1

TRANSISTOR

NSN, MFG P/N

5961010107910

NSN

5961-01-010-7910

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19A115413P1

TRANSISTOR

NSN, MFG P/N

5961010107910

NSN

5961-01-010-7910

MFG

GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV

Description

DESIGN CONTROL REFERENCE: 19A116141P1
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 08771
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:

104-1056-011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107912

NSN

5961-01-010-7912

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104-1056-011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107912

NSN

5961-01-010-7912

MFG

EAGLE COACH CORP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.073 INCHES
OVERALL LENGTH: 1.000 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.067 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNEF

1894867

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107912

NSN

5961-01-010-7912

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1894867

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107912

NSN

5961-01-010-7912

MFG

REMY INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.073 INCHES
OVERALL LENGTH: 1.000 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.067 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNEF

1963290

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107912

NSN

5961-01-010-7912

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1963290

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107912

NSN

5961-01-010-7912

MFG

GENERAL MOTORS CORP DELCO REMY DIV

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.073 INCHES
OVERALL LENGTH: 1.000 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.067 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNEF

7A-3-150

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107912

NSN

5961-01-010-7912

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7A-3-150

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107912

NSN

5961-01-010-7912

MFG

MOTOR COACH INDUSTRIES INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.073 INCHES
OVERALL LENGTH: 1.000 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.067 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNEF

1N5002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107915

NSN

5961-01-010-7915

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1N5002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107915

NSN

5961-01-010-7915

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5300 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

1N5003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107915

NSN

5961-01-010-7915

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1N5003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107915

NSN

5961-01-010-7915

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5300 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

SD20LE

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107916

NSN

5961-01-010-7916

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SD20LE

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107916

NSN

5961-01-010-7916

MFG

MICRONETICS INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.094 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N5278A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107917

NSN

5961-01-010-7917

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1N5278A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107917

NSN

5961-01-010-7917

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 740.00 MICROAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-204AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.00 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5566 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 170.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

1N5278B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107917

NSN

5961-01-010-7917

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1N5278B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107917

NSN

5961-01-010-7917

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

CURRENT RATING PER CHARACTERISTIC: 740.00 MICROAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-204AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.00 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5566 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 170.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

RELEASE5566

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107917

NSN

5961-01-010-7917

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RELEASE5566

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107917

NSN

5961-01-010-7917

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 740.00 MICROAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-204AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.00 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5566 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 170.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

A65433

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107922

NSN

5961-01-010-7922

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A65433

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107922

NSN

5961-01-010-7922

MFG

POWER DESIGNS INC

Description

DESIGN CONTROL REFERENCE: A65433
MANUFACTURERS CODE: 98095
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:

G21N4383

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107922

NSN

5961-01-010-7922

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G21N4383

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010107922

NSN

5961-01-010-7922

MFG

ST-SEMICON INC

Description

DESIGN CONTROL REFERENCE: A65433
MANUFACTURERS CODE: 98095
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:

CD2728

TRANSISTOR

NSN, MFG P/N

5961010107929

NSN

5961-01-010-7929

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CD2728

TRANSISTOR

NSN, MFG P/N

5961010107929

NSN

5961-01-010-7929

MFG

VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 5821-00-295-5657
INCLOSURE MATERIAL: METAL AND PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL HEIGHT: 0.688 INCHES NOMINAL
OVERALL LENGTH: 0.688 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 RIBBON AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 33.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

PT6691

TRANSISTOR

NSN, MFG P/N

5961010107929

NSN

5961-01-010-7929

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PT6691

TRANSISTOR

NSN, MFG P/N

5961010107929

NSN

5961-01-010-7929

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 5821-00-295-5657
INCLOSURE MATERIAL: METAL AND PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL HEIGHT: 0.688 INCHES NOMINAL
OVERALL LENGTH: 0.688 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 RIBBON AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 33.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

SM-A-790983-2

TRANSISTOR

NSN, MFG P/N

5961010107929

NSN

5961-01-010-7929

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SM-A-790983-2

TRANSISTOR

NSN, MFG P/N

5961010107929

NSN

5961-01-010-7929

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 5821-00-295-5657
INCLOSURE MATERIAL: METAL AND PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL HEIGHT: 0.688 INCHES NOMINAL
OVERALL LENGTH: 0.688 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 RIBBON AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 33.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

2658998

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010108139

NSN

5961-01-010-8139

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2658998

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010108139

NSN

5961-01-010-8139

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

0N219482

TRANSISTOR

NSN, MFG P/N

5961010108229

NSN

5961-01-010-8229

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0N219482

TRANSISTOR

NSN, MFG P/N

5961010108229

NSN

5961-01-010-8229

MFG

NATIONAL SECURITY AGENCY

Description

DESIGN CONTROL REFERENCE: 0N219482
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: KG44
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 98230
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.677 INCHES NOMINAL
OVERALL LENGTH: 1.195 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SELECTED ITEM
TERMINAL TYPE AND QUANTITY: 1 PIN AND 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 98230-0N219482 DRAWING
THE MANUFACTURERS DATA:
THREAD QUANTITY PER INCH: 28
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED

14909

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010108789

NSN

5961-01-010-8789

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14909

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010108789

NSN

5961-01-010-8789

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

DESIGN CONTROL REFERENCE: 14909
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01295
MOUNTING METHOD: CLIP
OVERALL DIAMETER: 0.083 INCHES MAXIMUM
OVERALL LENGTH: 0.034 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL TYPE AND QUANTITY: 1 FERRULE
THE MANUFACTURERS DATA: