My Quote Request
No products added yet
5961-01-030-2086
20 Products
86-684-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010302086
NSN
5961-01-030-2086
86-684-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010302086
NSN
5961-01-030-2086
MFG
MICRO USPD INC
Description
DESIGN CONTROL REFERENCE: 925410-1B
MANUFACTURERS CODE: 82577
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
PT4132D
TRANSISTOR
NSN, MFG P/N
5961010301237
NSN
5961-01-030-1237
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL HEIGHT: 0.775 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CERAMIC CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 4V792-352-0977 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
SRF3710
TRANSISTOR
NSN, MFG P/N
5961010301237
NSN
5961-01-030-1237
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL HEIGHT: 0.775 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CERAMIC CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 4V792-352-0977 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
03-0064-14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010301259
NSN
5961-01-030-1259
03-0064-14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010301259
NSN
5961-01-030-1259
MFG
LUCAS AEROSPACE POWER EQUIPMENT CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
03-0066-03
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010301305
NSN
5961-01-030-1305
03-0066-03
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010301305
NSN
5961-01-030-1305
MFG
LUCAS AEROSPACE POWER EQUIPMENT CORPORATION
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
03-0065-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010301321
NSN
5961-01-030-1321
03-0065-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010301321
NSN
5961-01-030-1321
MFG
LUCAS AEROSPACE POWER EQUIPMENT CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
03-0065-17
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010301322
NSN
5961-01-030-1322
03-0065-17
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010301322
NSN
5961-01-030-1322
MFG
LUCAS AEROSPACE POWER EQUIPMENT CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
05-900964
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010301323
NSN
5961-01-030-1323
MFG
LUCAS AEROSPACE POWER EQUIPMENT CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
10669459
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010301516
NSN
5961-01-030-1516
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 10669459
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 18876
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
SZ12125H
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010301516
NSN
5961-01-030-1516
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: 10669459
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 18876
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
05J00001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010302081
NSN
5961-01-030-2081
05J00001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010302081
NSN
5961-01-030-2081
MFG
HEKIMIAN LABORATORIES INC CUSTOMER SUPPORT DEPT
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.740 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
Related Searches:
525990C00A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010302081
NSN
5961-01-030-2081
525990C00A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010302081
NSN
5961-01-030-2081
MFG
CHAUVIN ARNOUX
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.740 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
Related Searches:
MPQ6700
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010302081
NSN
5961-01-030-2081
MPQ6700
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010302081
NSN
5961-01-030-2081
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.740 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
Related Searches:
3130233G001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010302084
NSN
5961-01-030-2084
3130233G001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010302084
NSN
5961-01-030-2084
MFG
ITT CORPORATION
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 PEAK INVERSE VOLTAGE
MATERIAL: SILICON
Related Searches:
40636
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010302084
NSN
5961-01-030-2084
40636
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010302084
NSN
5961-01-030-2084
MFG
DATRON SYSTEMS INC
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 PEAK INVERSE VOLTAGE
MATERIAL: SILICON
Related Searches:
SCBK6
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010302084
NSN
5961-01-030-2084
SCBK6
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010302084
NSN
5961-01-030-2084
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 PEAK INVERSE VOLTAGE
MATERIAL: SILICON
Related Searches:
652-1070
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010302085
NSN
5961-01-030-2085
652-1070
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010302085
NSN
5961-01-030-2085
MFG
MICRO USPD INC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 925411-1B
MANUFACTURERS CODE: 82577
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 0.890 INCHES MAXIMUM
OVERALL LENGTH: 0.280 INCHES MAXIMUM
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
TERMINAL TYPE AND QUANTITY: 4 TURRET
THE MANUFACTURERS DATA:
Related Searches:
925411-1B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010302085
NSN
5961-01-030-2085
925411-1B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010302085
NSN
5961-01-030-2085
MFG
RAYTHEON COMPANY
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 925411-1B
MANUFACTURERS CODE: 82577
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 0.890 INCHES MAXIMUM
OVERALL LENGTH: 0.280 INCHES MAXIMUM
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
TERMINAL TYPE AND QUANTITY: 4 TURRET
THE MANUFACTURERS DATA:
Related Searches:
SA2577
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010302085
NSN
5961-01-030-2085
SA2577
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010302085
NSN
5961-01-030-2085
MFG
SEMTECH CORPORATION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 925411-1B
MANUFACTURERS CODE: 82577
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 0.890 INCHES MAXIMUM
OVERALL LENGTH: 0.280 INCHES MAXIMUM
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
TERMINAL TYPE AND QUANTITY: 4 TURRET
THE MANUFACTURERS DATA:
Related Searches:
925410-1B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010302086
NSN
5961-01-030-2086
925410-1B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010302086
NSN
5961-01-030-2086
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: 925410-1B
MANUFACTURERS CODE: 82577
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
