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5961-00-006-6554
20 Products
1075
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000066554
NSN
5961-00-006-6554
MFG
ISOFILM INTERNATIONAL
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 06481
MFR SOURCE CONTROLLING REFERENCE: 109307-0533
OVERALL HEIGHT: 0.100 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.438 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: STATIC ELECTRICITY SENSITIVITY AND ELECTROMAGNETIC FIELD SENSITIVITY
Related Searches:
109307-0533
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000066554
NSN
5961-00-006-6554
109307-0533
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000066554
NSN
5961-00-006-6554
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 06481
MFR SOURCE CONTROLLING REFERENCE: 109307-0533
OVERALL HEIGHT: 0.100 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.438 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: STATIC ELECTRICITY SENSITIVITY AND ELECTROMAGNETIC FIELD SENSITIVITY
Related Searches:
PD2721-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000066554
NSN
5961-00-006-6554
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 06481
MFR SOURCE CONTROLLING REFERENCE: 109307-0533
OVERALL HEIGHT: 0.100 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.438 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: STATIC ELECTRICITY SENSITIVITY AND ELECTROMAGNETIC FIELD SENSITIVITY
Related Searches:
AS132678-1
TRANSISTOR
NSN, MFG P/N
5961000066858
NSN
5961-00-006-6858
MFG
LOCKHEED MARTIN CORP ELECTRONICS AND MISSILES DIV
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.553 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 87.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
3183594
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000066931
NSN
5961-00-006-6931
3183594
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000066931
NSN
5961-00-006-6931
MFG
HONEYWELL INTERNATIONAL INC . DBA HONEYWELL DIV AEROSPACE - TEMPE WEST WARNER ROAD
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 2.280 INCHES MAXIMUM
OVERALL WIDTH: 0.770 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE
Related Searches:
SA3353
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000066931
NSN
5961-00-006-6931
SA3353
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000066931
NSN
5961-00-006-6931
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 2.280 INCHES MAXIMUM
OVERALL WIDTH: 0.770 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE
Related Searches:
3184673
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000066932
NSN
5961-00-006-6932
3184673
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000066932
NSN
5961-00-006-6932
MFG
ALLIED-SIGNAL INC DBA ALLIED-SIGNAL AEROSPACE CO ELECTRODYNAMICS DIV
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
SA3354
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000066932
NSN
5961-00-006-6932
SA3354
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000066932
NSN
5961-00-006-6932
MFG
SEMTECH CORPORATION
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
57530700-01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000066961
NSN
5961-00-006-6961
57530700-01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000066961
NSN
5961-00-006-6961
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.35 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.150 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TRANSFER RATIO: 140.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIM
Related Searches:
SA1697
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000066961
NSN
5961-00-006-6961
SA1697
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000066961
NSN
5961-00-006-6961
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.35 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.150 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TRANSFER RATIO: 140.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIM
Related Searches:
2N4942
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000066962
NSN
5961-00-006-6962
2N4942
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000066962
NSN
5961-00-006-6962
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 10.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC ALL TRANSISTOR
III END ITEM IDENTIFICATION: E/IFSCM0000000000000
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR-TO-EMITTER OFFSET VOLTAGE AND 50.0 MAXIMUM COLLECTOR SUPPLY VOLTAGE AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
Related Searches:
57532900-01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000066962
NSN
5961-00-006-6962
57532900-01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000066962
NSN
5961-00-006-6962
MFG
SOLID STATE DEVICES INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 10.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC ALL TRANSISTOR
III END ITEM IDENTIFICATION: E/IFSCM0000000000000
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR-TO-EMITTER OFFSET VOLTAGE AND 50.0 MAXIMUM COLLECTOR SUPPLY VOLTAGE AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
Related Searches:
SA1698
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000066962
NSN
5961-00-006-6962
SA1698
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000066962
NSN
5961-00-006-6962
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 10.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC ALL TRANSISTOR
III END ITEM IDENTIFICATION: E/IFSCM0000000000000
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR-TO-EMITTER OFFSET VOLTAGE AND 50.0 MAXIMUM COLLECTOR SUPPLY VOLTAGE AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
Related Searches:
57651000-02
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000066964
NSN
5961-00-006-6964
57651000-02
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000066964
NSN
5961-00-006-6964
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.150 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TRANSFER RATIO: 90.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
Related Searches:
SD1309F2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000066964
NSN
5961-00-006-6964
SD1309F2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000066964
NSN
5961-00-006-6964
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.150 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TRANSFER RATIO: 90.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
Related Searches:
1N3350RA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000067024
NSN
5961-00-006-7024
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 240.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3350RB
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-358
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGN
Related Searches:
4803-187617
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000067024
NSN
5961-00-006-7024
4803-187617
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000067024
NSN
5961-00-006-7024
MFG
FLUKE CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 240.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3350RB
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-358
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGN
Related Searches:
JAN1N3350RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000067024
NSN
5961-00-006-7024
JAN1N3350RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000067024
NSN
5961-00-006-7024
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 240.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3350RB
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-358
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGN
Related Searches:
2N3061
TRANSISTOR
NSN, MFG P/N
5961000067097
NSN
5961-00-006-7097
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4568 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 6
Related Searches:
2N5000
TRANSISTOR
NSN, MFG P/N
5961000067138
NSN
5961-00-006-7138
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 0.320 INCHES MINIMUM AND 0.468 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5569 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREA
