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5961-01-034-8381
20 Products
5800583-926201.124
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348381
NSN
5961-01-034-8381
5800583-926201.124
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348381
NSN
5961-01-034-8381
MFG
EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.048 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
OVERALL LENGTH: 0.040 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 82577-925196 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
925196-501B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348381
NSN
5961-01-034-8381
925196-501B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348381
NSN
5961-01-034-8381
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.048 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
OVERALL LENGTH: 0.040 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 82577-925196 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
A2X887
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348381
NSN
5961-01-034-8381
MFG
FEI MICROWAVE INC
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.048 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
OVERALL LENGTH: 0.040 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 82577-925196 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
MX1042-501B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348381
NSN
5961-01-034-8381
MX1042-501B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348381
NSN
5961-01-034-8381
MFG
AEROFLEX / METELICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.048 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
OVERALL LENGTH: 0.040 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 82577-925196 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
UX925196-501B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348381
NSN
5961-01-034-8381
UX925196-501B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348381
NSN
5961-01-034-8381
MFG
SEMI-GENERAL INC .
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.048 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
OVERALL LENGTH: 0.040 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 82577-925196 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
98471-72047
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348382
NSN
5961-01-034-8382
98471-72047
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348382
NSN
5961-01-034-8382
MFG
SELEX GALILEO LTD
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5613
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS-19500-434
OVERALL DIAMETER: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/434 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 175.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
JAN1N5613
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348382
NSN
5961-01-034-8382
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5613
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS-19500-434
OVERALL DIAMETER: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/434 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 175.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
C45CX117
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010348383
NSN
5961-01-034-8383
C45CX117
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010348383
NSN
5961-01-034-8383
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, AWACS, E-3A, 485L TACS
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 120.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.049 INCHES MINIMUM AND 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.25 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC
Related Searches:
BZY78
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348441
NSN
5961-01-034-8441
MFG
VISHAY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
S5A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348711
NSN
5961-01-034-8711
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
DESIGN CONTROL REFERENCE: S5A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: SH879
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
862027-0154
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010348762
NSN
5961-01-034-8762
862027-0154
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010348762
NSN
5961-01-034-8762
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
DESIGN CONTROL REFERENCE: 862027-0154
MANUFACTURERS CODE: 06481
MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
SA10642
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010348762
NSN
5961-01-034-8762
SA10642
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010348762
NSN
5961-01-034-8762
MFG
SEMTECH CORPORATION
Description
DESIGN CONTROL REFERENCE: 862027-0154
MANUFACTURERS CODE: 06481
MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
862022-0044
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348763
NSN
5961-01-034-8763
862022-0044
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348763
NSN
5961-01-034-8763
MFG
LITTON SYSTEMS INC. DIV NAVIGATION SYSTEMS DIVISION
Description
DESIGN CONTROL REFERENCE: 862022-0044
MANUFACTURERS CODE: 13973
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
862024-0044
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348764
NSN
5961-01-034-8764
862024-0044
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348764
NSN
5961-01-034-8764
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5525C-1
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
JANTX1N5525C-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348764
NSN
5961-01-034-8764
JANTX1N5525C-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348764
NSN
5961-01-034-8764
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5525C-1
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
862033-0014
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348765
NSN
5961-01-034-8765
862033-0014
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010348765
NSN
5961-01-034-8765
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
862142-34
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010348766
NSN
5961-01-034-8766
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE THYRISTOR
DESIGN CONTROL REFERENCE: 862142-34
MANUFACTURERS CODE: 06481
THE MANUFACTURERS DATA:
Related Searches:
241473-000
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010348873
NSN
5961-01-034-8873
241473-000
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010348873
NSN
5961-01-034-8873
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
III END ITEM IDENTIFICATION: AIRBORNE ELECTRONIC WARFARE EQUIPMENT
Related Searches:
584538-1
TRANSISTOR
NSN, MFG P/N
5961010349937
NSN
5961-01-034-9937
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: 584538-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 3B150
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49956-584538 DRAWING
THE MANUFACTURERS DATA:
Related Searches:
65999
TRANSISTOR
NSN, MFG P/N
5961010349937
NSN
5961-01-034-9937
MFG
INTERSIL CORPORATION
Description
DESIGN CONTROL REFERENCE: 584538-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 3B150
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49956-584538 DRAWING
THE MANUFACTURERS DATA:
