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5961-01-048-5238
20 Products
VC556
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010485238
NSN
5961-01-048-5238
MFG
EASTRON CORP
Description
OVERALL LENGTH: 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
VA823B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010485240
NSN
5961-01-048-5240
MFG
CRYSTALONICS INC.
Description
OVERALL DIAMETER: 0.325 INCHES MAXIMUM
OVERALL LENGTH: 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
151-0426-00
TRANSISTOR
NSN, MFG P/N
5961010485632
NSN
5961-01-048-5632
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
52816100A
TRANSISTOR
NSN, MFG P/N
5961010485632
NSN
5961-01-048-5632
MFG
BOONTON ELECTRONICS CORPORATION DBA ALLTEL
Description
TRANSISTOR
Related Searches:
SJE794
TRANSISTOR
NSN, MFG P/N
5961010485632
NSN
5961-01-048-5632
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
X44H242
TRANSISTOR
NSN, MFG P/N
5961010485632
NSN
5961-01-048-5632
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
TRANSISTOR
Related Searches:
12638-UB-B2
TRANSISTOR
NSN, MFG P/N
5961010485634
NSN
5961-01-048-5634
MFG
COLORADO ELECTRONICS CORP LLC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM GATE CURRENT AND 30.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13643-12638-UB-B2 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
353-3099-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010485635
NSN
5961-01-048-5635
353-3099-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010485635
NSN
5961-01-048-5635
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
DESIGN CONTROL REFERENCE: 353-3099-001
MANUFACTURERS CODE: 13499
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
THE MANUFACTURERS DATA:
Related Searches:
JAN1N977B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010485635
NSN
5961-01-048-5635
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DESIGN CONTROL REFERENCE: 353-3099-001
MANUFACTURERS CODE: 13499
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
THE MANUFACTURERS DATA:
Related Searches:
JAN1N4573A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010485636
NSN
5961-01-048-5636
JAN1N4573A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010485636
NSN
5961-01-048-5636
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4573A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-452
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/452 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERIST
Related Searches:
JANTX1N4573A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010485636
NSN
5961-01-048-5636
JANTX1N4573A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010485636
NSN
5961-01-048-5636
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4573A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-452
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/452 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERIST
Related Searches:
L02362
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010485636
NSN
5961-01-048-5636
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4573A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-452
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/452 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERIST
Related Searches:
652-729
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010485896
NSN
5961-01-048-5896
652-729
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010485896
NSN
5961-01-048-5896
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.460 INCHES MAXIMUM
OVERALL LENGTH: 1.030 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 WIRE LEAD
Related Searches:
MRF454
TRANSISTOR
NSN, MFG P/N
5961010486924
NSN
5961-01-048-6924
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: MRF454
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 04713
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.132 INCHES MAXIMUM
OVERALL LENGTH: 0.132 INCHES MAXIMUM
OVERALL WIDTH: 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
3A50
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010486925
NSN
5961-01-048-6925
MFG
ROHDE & SCHWARZ INC
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: A708488
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 82199
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES MAXIMUM
OVERALL LENGTH: 0.425 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
255-1000-100
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961010487005
NSN
5961-01-048-7005
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVIC
Related Searches:
352-0610-030
TRANSISTOR
NSN, MFG P/N
5961010487021
NSN
5961-01-048-7021
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
TRANSISTOR
Related Searches:
352-0697-010
TRANSISTOR
NSN, MFG P/N
5961010487022
NSN
5961-01-048-7022
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
TRANSISTOR
Related Searches:
353-6449-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010487023
NSN
5961-01-048-7023
353-6449-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010487023
NSN
5961-01-048-7023
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
353-6497-170
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010487024
NSN
5961-01-048-7024
353-6497-170
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010487024
NSN
5961-01-048-7024
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
