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5961-01-195-1959

20 Products

12272403

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961011951959

NSN

5961-01-195-1959

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12272403

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961011951959

NSN

5961-01-195-1959

MFG

U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
III END ITEM IDENTIFICATION: XM1 TIS TPCU
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12272403
OVERALL HEIGHT: 0.650 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:

389-8028

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961011951959

NSN

5961-01-195-1959

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389-8028

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961011951959

NSN

5961-01-195-1959

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
III END ITEM IDENTIFICATION: XM1 TIS TPCU
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12272403
OVERALL HEIGHT: 0.650 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:

SA9323

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961011951959

NSN

5961-01-195-1959

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SA9323

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961011951959

NSN

5961-01-195-1959

MFG

SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
III END ITEM IDENTIFICATION: XM1 TIS TPCU
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12272403
OVERALL HEIGHT: 0.650 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:

932474-0001

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961011952084

NSN

5961-01-195-2084

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932474-0001

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961011952084

NSN

5961-01-195-2084

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
RESPONSE TIME: 50.0 NANOSECONDS MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MINIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE

UTG8010

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961011952084

NSN

5961-01-195-2084

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UTG8010

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961011952084

NSN

5961-01-195-2084

MFG

MICRO USPD INC

Description

COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
RESPONSE TIME: 50.0 NANOSECONDS MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MINIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE

CTJ420E101-513

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961011952137

NSN

5961-01-195-2137

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CTJ420E101-513

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961011952137

NSN

5961-01-195-2137

MFG

DEUTSCH ENGINEERED CONNECTING DEVICES INC DBA DEFENSE AEROSPACE OPERATIONS DIV DEFENSE AEROSPACE OPERATIONS

Description

MAJOR COMPONENTS: DIODE 4
OVERALL HEIGHT: 0.920 INCHES MAXIMUM
OVERALL LENGTH: 0.672 INCHES NOMINAL
OVERALL WIDTH: 0.510 INCHES NOMINAL

MMT2907

TRANSISTOR

NSN, MFG P/N

5961011953087

NSN

5961-01-195-3087

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MMT2907

TRANSISTOR

NSN, MFG P/N

5961011953087

NSN

5961-01-195-3087

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.015 INCHES MINIMUM AND 0.025 INCHES MAXIMUM
OVERALL LENGTH: 0.078 INCHES MINIMUM AND 0.092 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

SDT1631

TRANSISTOR

NSN, MFG P/N

5961011953856

NSN

5961-01-195-3856

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SDT1631

TRANSISTOR

NSN, MFG P/N

5961011953856

NSN

5961-01-195-3856

MFG

SOLITRON DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 2.00 AMPERES MAXIMUM BASE CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.715 INCHES MINIMUM AND 0.740 INCHES MAXIMUM
OVERALL HEIGHT: 0.280 INCHES MINIMUM AND 0.328 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 20.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

VM108

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011953858

NSN

5961-01-195-3858

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VM108

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011953858

NSN

5961-01-195-3858

MFG

L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT AND 11.00 AMPERES NOMINAL REPETITIVE PEAK FORWARD CURRENT AND 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.370 INCHES MINIMUM AND 0.390 INCHES MAXIMUM
OVERALL WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
TERMINAL LENGTH: 0.180 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 700.0 NOMINAL REVERSE VOLTAGE, TOTAL RMS AND 1.2 NOMINAL FORWARD VOLTAGE, PEAK

932371-1

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011954282

NSN

5961-01-195-4282

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932371-1

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011954282

NSN

5961-01-195-4282

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

SA7656

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011954282

NSN

5961-01-195-4282

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SA7656

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011954282

NSN

5961-01-195-4282

MFG

SEMTECH CORPORATION

SDA300

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011954282

NSN

5961-01-195-4282

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SDA300

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011954282

NSN

5961-01-195-4282

MFG

SOLID STATE DEVICES INC.

932451-2

TRANSISTOR

NSN, MFG P/N

5961011954301

NSN

5961-01-195-4301

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932451-2

TRANSISTOR

NSN, MFG P/N

5961011954301

NSN

5961-01-195-4301

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

932328-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011954302

NSN

5961-01-195-4302

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932328-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011954302

NSN

5961-01-195-4302

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 750.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.430 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.690 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

932461-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011954303

NSN

5961-01-195-4303

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932461-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011954303

NSN

5961-01-195-4303

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

60S6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011954932

NSN

5961-01-195-4932

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60S6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011954932

NSN

5961-01-195-4932

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.200 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

JAN2N1131L

TRANSISTOR

NSN, MFG P/N

5961011956034

NSN

5961-01-195-6034

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JAN2N1131L

TRANSISTOR

NSN, MFG P/N

5961011956034

NSN

5961-01-195-6034

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1131L
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/177
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/177 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL_!!

23004131

TRANSISTOR

NSN, MFG P/N

5961011956313

NSN

5961-01-195-6313

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23004131

TRANSISTOR

NSN, MFG P/N

5961011956313

NSN

5961-01-195-6313

MFG

ALLISON TRANSMISSION INC. DBA ALLISON TRANSMISSION DIV ALLISON TRANSMISSION

2N6314

TRANSISTOR

NSN, MFG P/N

5961011956313

NSN

5961-01-195-6313

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2N6314

TRANSISTOR

NSN, MFG P/N

5961011956313

NSN

5961-01-195-6313

MFG

FREESCALE SEMICONDUCTOR INC.

23004130

TRANSISTOR

NSN, MFG P/N

5961011956314

NSN

5961-01-195-6314

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23004130

TRANSISTOR

NSN, MFG P/N

5961011956314

NSN

5961-01-195-6314

MFG

ALLISON TRANSMISSION INC. DBA ALLISON TRANSMISSION DIV ALLISON TRANSMISSION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM FORWARD CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: AIRCRAFT, B-1B
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MANUFACTURERS CODE: 73342
MFR SOURCE CONTROLLING REFERENCE: 23004130
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN