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5961-01-243-1932

20 Products

SPS8521

TRANSISTOR

NSN, MFG P/N

5961012431932

NSN

5961-01-243-1932

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SPS8521

TRANSISTOR

NSN, MFG P/N

5961012431932

NSN

5961-01-243-1932

MFG

FREESCALE SEMICONDUCTOR INC.

1-240106-0

TRANSISTOR

NSN, MFG P/N

5961012431933

NSN

5961-01-243-1933

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1-240106-0

TRANSISTOR

NSN, MFG P/N

5961012431933

NSN

5961-01-243-1933

MFG

ECTRON CORPORATION

151-1121-00

TRANSISTOR

NSN, MFG P/N

5961012431933

NSN

5961-01-243-1933

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151-1121-00

TRANSISTOR

NSN, MFG P/N

5961012431933

NSN

5961-01-243-1933

MFG

TEKTRONIX INC. DBA TEKTRONIX

89300418

TRANSISTOR

NSN, MFG P/N

5961012431933

NSN

5961-01-243-1933

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89300418

TRANSISTOR

NSN, MFG P/N

5961012431933

NSN

5961-01-243-1933

MFG

THALES AIR DEFENCE

V10206

TRANSISTOR

NSN, MFG P/N

5961012431933

NSN

5961-01-243-1933

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V10206

TRANSISTOR

NSN, MFG P/N

5961012431933

NSN

5961-01-243-1933

MFG

SILICONIX INCORPORATED D IV SILICONIX

VN0106N3

TRANSISTOR

NSN, MFG P/N

5961012431933

NSN

5961-01-243-1933

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VN0106N3

TRANSISTOR

NSN, MFG P/N

5961012431933

NSN

5961-01-243-1933

MFG

SUPERTEX INC.

JANTX1N6327

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012431934

NSN

5961-01-243-1934

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JANTX1N6327

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012431934

NSN

5961-01-243-1934

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 9.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6327
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/533
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/533 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

151369-1

RECTIFIER MODULE

NSN, MFG P/N

5961012431966

NSN

5961-01-243-1966

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151369-1

RECTIFIER MODULE

NSN, MFG P/N

5961012431966

NSN

5961-01-243-1966

MFG

CONTINENTAL ELECTRONICS CORPORATION

Description

DESIGN CONTROL REFERENCE: 151369-1
GENERAL CHARACTERISTICS ITEM DESCRIPTION: PLUG-IN; 16.120 IN. LG,9.990 IN. H,4.750 IN. W; CONTAINS DIODE 1
MANUFACTURERS CODE: 52151
THE MANUFACTURERS DATA:

151129-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012432328

NSN

5961-01-243-2328

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151129-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012432328

NSN

5961-01-243-2328

MFG

CONTINENTAL ELECTRONICS CORPORATION

306117-001

DIODE ASSEMBLY

NSN, MFG P/N

5961012432699

NSN

5961-01-243-2699

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306117-001

DIODE ASSEMBLY

NSN, MFG P/N

5961012432699

NSN

5961-01-243-2699

MFG

TDK-LAMBDA AMERICAS INC. D IV HIGH POWER DIVISION

151-0698-00

TRANSISTOR

NSN, MFG P/N

5961012433506

NSN

5961-01-243-3506

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151-0698-00

TRANSISTOR

NSN, MFG P/N

5961012433506

NSN

5961-01-243-3506

MFG

TEKTRONIX INC. DBA TEKTRONIX

SJE350

TRANSISTOR

NSN, MFG P/N

5961012433506

NSN

5961-01-243-3506

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SJE350

TRANSISTOR

NSN, MFG P/N

5961012433506

NSN

5961-01-243-3506

MFG

FREESCALE SEMICONDUCTOR INC.

152-0673-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012433507

NSN

5961-01-243-3507

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152-0673-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012433507

NSN

5961-01-243-3507

MFG

TEKTRONIX INC. DBA TEKTRONIX

SMV1361

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012433507

NSN

5961-01-243-3507

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SMV1361

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012433507

NSN

5961-01-243-3507

MFG

FREESCALE SEMICONDUCTOR INC.

1884-0032

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012433508

NSN

5961-01-243-3508

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1884-0032

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012433508

NSN

5961-01-243-3508

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 7.40 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

C220B

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012433508

NSN

5961-01-243-3508

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C220B

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012433508

NSN

5961-01-243-3508

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN

Description

CURRENT RATING PER CHARACTERISTIC: 7.40 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

586115

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012433588

NSN

5961-01-243-3588

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586115

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012433588

NSN

5961-01-243-3588

MFG

FLUKE CORPORATION

Description

OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER

FWLC50

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012433588

NSN

5961-01-243-3588

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FWLC50

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012433588

NSN

5961-01-243-3588

MFG

SEMICON COMPONENTS INC

Description

OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER

KBL005

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012433588

NSN

5961-01-243-3588

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KBL005

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012433588

NSN

5961-01-243-3588

MFG

GENERAL SEMICONDUCTOR INC

Description

OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER

0N634201-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012433815

NSN

5961-01-243-3815

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0N634201-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012433815

NSN

5961-01-243-3815

MFG

NATIONAL SECURITY AGENCY