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5961-01-455-7655
20 Products
1SMC75A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014557655
NSN
5961-01-455-7655
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: REC/TRANSMIT E/I FSCM 11711
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
Related Searches:
S6127
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014552399
NSN
5961-01-455-2399
MFG
SEMICON COMPONENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 37.0 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
A3194497-001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014552884
NSN
5961-01-455-2884
A3194497-001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014552884
NSN
5961-01-455-2884
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
III END ITEM IDENTIFICATION: SATCOM G92NHAX239
Related Searches:
0N639422-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014554862
NSN
5961-01-455-4862
0N639422-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014554862
NSN
5961-01-455-4862
MFG
NATIONAL SECURITY AGENCY
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM PEAK POINT CURRENT
III END ITEM IDENTIFICATION: CRYPTO
SPECIAL FEATURES: SUBMITTED NAME;DIODE,BIPOLAR;INDUCTANCE 1.7NH,CAPACITANCE 1.40 NF;TRANSIENT ENERGY .4 JOULES;MAXIMUM WORKING VOLTAGE 14;CLAMPING VOLTAGE 30(MAX)
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.9 MINIMUM BREAKDOWN VOLTAGE, DC AND 19.4 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
VC120614D3003D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014554862
NSN
5961-01-455-4862
VC120614D3003D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014554862
NSN
5961-01-455-4862
MFG
AVX CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM PEAK POINT CURRENT
III END ITEM IDENTIFICATION: CRYPTO
SPECIAL FEATURES: SUBMITTED NAME;DIODE,BIPOLAR;INDUCTANCE 1.7NH,CAPACITANCE 1.40 NF;TRANSIENT ENERGY .4 JOULES;MAXIMUM WORKING VOLTAGE 14;CLAMPING VOLTAGE 30(MAX)
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.9 MINIMUM BREAKDOWN VOLTAGE, DC AND 19.4 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
0N639425-3
TRANSISTOR
NSN, MFG P/N
5961014554863
NSN
5961-01-455-4863
MFG
NATIONAL SECURITY AGENCY
Description
III END ITEM IDENTIFICATION: CRYPTO
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
Related Searches:
2N6784
TRANSISTOR
NSN, MFG P/N
5961014554863
NSN
5961-01-455-4863
MFG
INTERSIL CORPORATION
Description
III END ITEM IDENTIFICATION: CRYPTO
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
Related Searches:
IR423
TRANSISTOR
NSN, MFG P/N
5961014554921
NSN
5961-01-455-4921
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
1N3314BR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014554923
NSN
5961-01-455-4923
MFG
FREESCALE SEMICONDUCTOR INC.
Description
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL REGULATOR VOLTAGE, DC
Related Searches:
1A20905G01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014555256
NSN
5961-01-455-5256
1A20905G01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014555256
NSN
5961-01-455-5256
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
III END ITEM IDENTIFICATION: ARSR-4
Related Searches:
381455-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014556257
NSN
5961-01-455-6257
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: REC/TRANSMITT E/I FSCM 59993
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
Related Searches:
IRF540N
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014556257
NSN
5961-01-455-6257
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
III END ITEM IDENTIFICATION: REC/TRANSMITT E/I FSCM 59993
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
Related Searches:
381491-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014556271
NSN
5961-01-455-6271
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: REC/TRANSMITT E/I FSCM 04713
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
Related Searches:
MJE5730
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014556271
NSN
5961-01-455-6271
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: REC/TRANSMITT E/I FSCM 04713
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
Related Searches:
S233103-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014556275
NSN
5961-01-455-6275
S233103-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014556275
NSN
5961-01-455-6275
MFG
SODERBERG MFG.CO.INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
DL4004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014557082
NSN
5961-01-455-7082
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CAPACITANCE RATING IN PICOFARADS: 15.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: GLASS
OVERALL HEIGHT: 0.095 INCHES MINIMUM AND 0.099 INCHES MAXIMUM
OVERALL LENGTH: 0.190 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.022 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
SI9948DY
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014557084
NSN
5961-01-455-7084
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -2.00 AMPERES MAXIMUM SOURCE CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 1.3 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
MRF313
TRANSISTOR
NSN, MFG P/N
5961014557108
NSN
5961-01-455-7108
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MICROAMPERES MAXIMUM COLLECTOR CURRENT, DC
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE, RMS
Related Searches:
526-7031
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014557400
NSN
5961-01-455-7400
MFG
NAVAL SURFACE WARFARE CENTER DAHLGREN DIV
Description
III END ITEM IDENTIFICATION: CP-2351/UPX-3 E/I FSCM 03950
Related Searches:
353-3827-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014557649
NSN
5961-01-455-7649
353-3827-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014557649
NSN
5961-01-455-7649
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP STANDARDIZATION UNIT
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 353-3827-010
III END ITEM IDENTIFICATION: JTIDS CLASS I E/I FSCM 037Z3
MANUFACTURERS CODE: 037Z3
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
