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5961-01-295-4803
20 Products
6642-520
TRANSISTOR
NSN, MFG P/N
5961012954803
NSN
5961-01-295-4803
MFG
PICKER INTL INC
Description
DESIGN CONTROL REFERENCE: 6642-520
III END ITEM IDENTIFICATION: 6525-01-224-0194
III PURCHASE DESCRIPTION IDENTIFICATION: 47220-6642-520
MANUFACTURERS CODE: 47220
SPECIAL FEATURES: REPAIR PART FOR X-RAY APPARATUS,RADIOGRAPHIC,MDL 6622 A AND B
THE MANUFACTURERS DATA:
Related Searches:
6642-225
TRANSISTOR
NSN, MFG P/N
5961012954804
NSN
5961-01-295-4804
MFG
PICKER INTL INC
Description
DESIGN CONTROL REFERENCE: 6642-225
III END ITEM IDENTIFICATION: 6525-01-224-0194
III PURCHASE DESCRIPTION IDENTIFICATION: 47220-6642-225
MANUFACTURERS CODE: 47220
SPECIAL FEATURES: REPAIR PART FOR X-RAY APPARATUS,RADIOGRAPHIC,MDL 6622 A AND B
THE MANUFACTURERS DATA:
Related Searches:
T80M-485
TRANSISTOR
NSN, MFG P/N
5961012954805
NSN
5961-01-295-4805
MFG
PICKER INTL INC
Description
DESIGN CONTROL REFERENCE: T80M-485
III END ITEM IDENTIFICATION: 6525-01-224-0198
III PURCHASE DESCRIPTION IDENTIFICATION: 47220-T80M-485
MANUFACTURERS CODE: 47220
SPECIAL FEATURES: REPAIR PART FOR X-RAY APPARATUS,RADIOGRAPHIC,MDL 6622 A AND B
THE MANUFACTURERS DATA:
Related Searches:
6661-071
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012954827
NSN
5961-01-295-4827
6661-071
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012954827
NSN
5961-01-295-4827
MFG
PICKER INTL INC
Description
DESIGN CONTROL REFERENCE: 6661-071
III END ITEM IDENTIFICATION: 6525-01-224-0194
MANUFACTURERS CODE: 47220
SPECIAL FEATURES: REPAIR PART FOR X-RAY APPARATUS,MDL 6622A AND B
THE MANUFACTURERS DATA:
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204-0016-010
TRANSISTOR
NSN, MFG P/N
5961012955035
NSN
5961-01-295-5035
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 95105-204-0016-010 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -20.0 MAXIMUM GATE TO SOURCE VOLT
Related Searches:
91488417
TRANSISTOR
NSN, MFG P/N
5961012955035
NSN
5961-01-295-5035
MFG
THALES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 95105-204-0016-010 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -20.0 MAXIMUM GATE TO SOURCE VOLT
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CM860
TRANSISTOR
NSN, MFG P/N
5961012955035
NSN
5961-01-295-5035
MFG
CRYSTALONICS INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 95105-204-0016-010 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -20.0 MAXIMUM GATE TO SOURCE VOLT
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JAN1N4106
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955036
NSN
5961-01-295-5036
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC AND 32.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4106-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIR
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204-0015-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955037
NSN
5961-01-295-5037
204-0015-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955037
NSN
5961-01-295-5037
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 18.00 MILLIAMPERES MINIMUM PEAK POINT CURRENT AND 22.00 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FUNCTION FOR WHICH DESIGNED: CURRENT REGULATOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 95105-204-0015 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM LIMITING VOLTAGE
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CIL-868
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955037
NSN
5961-01-295-5037
MFG
CRYSTALONICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 18.00 MILLIAMPERES MINIMUM PEAK POINT CURRENT AND 22.00 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FUNCTION FOR WHICH DESIGNED: CURRENT REGULATOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 95105-204-0015 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM LIMITING VOLTAGE
Related Searches:
204-0016-020
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012955038
NSN
5961-01-295-5038
204-0016-020
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012955038
NSN
5961-01-295-5038
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT ALL TRANSISTOR
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: FIELD EFFECT ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING METHOD: TERMINAL ALL TRANSISTOR
OVERALL DIAMETER: 0.230 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.210 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIFICATION/STANDARD DATA: 95105-204-0016-020 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL ALL TRANSISTOR
TERMINAL LENGT
Related Searches:
CM931
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012955038
NSN
5961-01-295-5038
MFG
CRYSTALONICS INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT ALL TRANSISTOR
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: FIELD EFFECT ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING METHOD: TERMINAL ALL TRANSISTOR
OVERALL DIAMETER: 0.230 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.210 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIFICATION/STANDARD DATA: 95105-204-0016-020 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL ALL TRANSISTOR
TERMINAL LENGT
Related Searches:
0N376101-1
TRANSISTOR
NSN, MFG P/N
5961012955084
NSN
5961-01-295-5084
MFG
NATIONAL SECURITY AGENCY
Description
TRANSISTOR
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0N376102-1
TRANSISTOR
NSN, MFG P/N
5961012955085
NSN
5961-01-295-5085
MFG
NATIONAL SECURITY AGENCY
Description
TRANSISTOR
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0N376104-1
TRANSISTOR
NSN, MFG P/N
5961012955086
NSN
5961-01-295-5086
MFG
NATIONAL SECURITY AGENCY
Description
TRANSISTOR
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0N376109-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955399
NSN
5961-01-295-5399
0N376109-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955399
NSN
5961-01-295-5399
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0N376112-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955400
NSN
5961-01-295-5400
0N376112-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955400
NSN
5961-01-295-5400
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0N376114-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955401
NSN
5961-01-295-5401
0N376114-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955401
NSN
5961-01-295-5401
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0N376129-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955402
NSN
5961-01-295-5402
0N376129-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955402
NSN
5961-01-295-5402
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0N376115-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955403
NSN
5961-01-295-5403
0N376115-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955403
NSN
5961-01-295-5403
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
