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5961-00-600-0744
20 Products
2N6180
TRANSISTOR
NSN, MFG P/N
5961006000744
NSN
5961-00-600-0744
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.155 INCHES MAXIMUM
OVERALL LENGTH: 0.395 INCHES MAXIMUM
OVERALL WIDTH: 0.315 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE6265 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
JANTX1N3005RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006000880
NSN
5961-00-600-0880
JANTX1N3005RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006000880
NSN
5961-00-600-0880
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 450.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3005RB
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-124
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500.124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
322-1085P5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006001439
NSN
5961-00-600-1439
322-1085P5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006001439
NSN
5961-00-600-1439
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SG211
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006001439
NSN
5961-00-600-1439
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SVT350-3
TRANSISTOR
NSN, MFG P/N
5961006004210
NSN
5961-00-600-4210
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
MCR1308-4
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961006005517
NSN
5961-00-600-5517
MCR1308-4
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961006005517
NSN
5961-00-600-5517
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL HEIGHT: 0.990 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 3 THREADED STUD,WIRE LEAD TERMINALS; JUNCTION PATTERN ARRANGEMENT: PNPN
Related Searches:
922-6074-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006010729
NSN
5961-00-601-0729
922-6074-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006010729
NSN
5961-00-601-0729
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CAPACITANCE RATING IN PICOFARADS: 15.0 MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
MA4394
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006010729
NSN
5961-00-601-0729
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CAPACITANCE RATING IN PICOFARADS: 15.0 MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
X18-3232
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006016560
NSN
5961-00-601-6560
MFG
CLEVELAND MOTION CONTROLS INC. DBA C M C
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
101-322-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006018042
NSN
5961-00-601-8042
101-322-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006018042
NSN
5961-00-601-8042
MFG
ATLEE OF DELAWARE INC DBA ATLEE
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: FRICTION FASTENER
DESIGN CONTROL REFERENCE: 101-322-1
III PRECIOUS MATERIAL: SILVER
MANUFACTURERS CODE: 99378
MATERIAL: COPPER
MOUNTING FACILITY TYPE AND QUANTITY: 1 UNTHREADED HOLE SINGLE MOUNTING FACILITY
OVERALL HEIGHT: 0.366 INCHES NOMINAL
OVERALL LENGTH: 0.344 INCHES NOMINAL
OVERALL WIDTH: 0.443 INCHES NOMINAL
STYLE DESIGNATOR: 1C RECTANGULAR PRISM
SURFACE TREATMENT: SILVER
THE MANUFACTURERS DATA:
UNTHREADED MOUNTING HOLE DIAMETER: 0.067 INCHES NOMINAL SINGLE MOUNTING FACILITY
Related Searches:
666137-325
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006018042
NSN
5961-00-601-8042
666137-325
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006018042
NSN
5961-00-601-8042
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: FRICTION FASTENER
DESIGN CONTROL REFERENCE: 101-322-1
III PRECIOUS MATERIAL: SILVER
MANUFACTURERS CODE: 99378
MATERIAL: COPPER
MOUNTING FACILITY TYPE AND QUANTITY: 1 UNTHREADED HOLE SINGLE MOUNTING FACILITY
OVERALL HEIGHT: 0.366 INCHES NOMINAL
OVERALL LENGTH: 0.344 INCHES NOMINAL
OVERALL WIDTH: 0.443 INCHES NOMINAL
STYLE DESIGNATOR: 1C RECTANGULAR PRISM
SURFACE TREATMENT: SILVER
THE MANUFACTURERS DATA:
UNTHREADED MOUNTING HOLE DIAMETER: 0.067 INCHES NOMINAL SINGLE MOUNTING FACILITY
Related Searches:
161-0016
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006021373
NSN
5961-00-602-1373
MFG
CETEC BROADCAST GROUP DIV OF CETEC CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL LENGTH: 1.281 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TOLERANCE PORM 10 PERCENT
Related Searches:
1N3340A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006021373
NSN
5961-00-602-1373
MFG
GENERAL ELECTRIC CO POWER ELECTRONICS SYSTEMS DEPT
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL LENGTH: 1.281 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TOLERANCE PORM 10 PERCENT
Related Searches:
1N2986RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006021374
NSN
5961-00-602-1374
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 1.234 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: REVERSE POLARIZED,PORM 5 PERCENT TOLERANCE
Related Searches:
1N2985RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006021375
NSN
5961-00-602-1375
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 1.234 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: REVERSE POLARIZED,PORM 5 PERCENT TOLERANCE
Related Searches:
74-7348
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006028524
NSN
5961-00-602-8524
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 74-7348
MANUFACTURERS CODE: 81483
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
THE MANUFACTURERS DATA:
Related Searches:
74-7350
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006028598
NSN
5961-00-602-8598
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 74-7350
MANUFACTURERS CODE: 81483
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
THE MANUFACTURERS DATA:
Related Searches:
1637513
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006033284
NSN
5961-00-603-3284
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES MAXIMUM
OVERALL LENGTH: 0.750 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 34.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
210042
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961006035561
NSN
5961-00-603-5561
MFG
EADS NORTH AMERICA INC. DBA EADS NORTH AMERICA TEST AND SERVICES DIV EADS NORTH AMERICA TEST AND SERVICES
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION: PN ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
128C602H01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961006036820
NSN
5961-00-603-6820
128C602H01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961006036820
NSN
5961-00-603-6820
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 NANOAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.100 INCHES MINIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL TRANSISTOR
