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5961-01-346-7582
20 Products
204-0161-010
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013467582
NSN
5961-01-346-7582
204-0161-010
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013467582
NSN
5961-01-346-7582
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FUNCTION FOR WHICH DESIGNED: BIDIRECTIONAL
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.390 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION AND 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.595 INCHES MINIMUM AND 0.655 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
BML24724
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013467055
NSN
5961-01-346-7055
BML24724
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013467055
NSN
5961-01-346-7055
MFG
BAE SYSTEMS LAND & ARMAMENTS L.P. DBA US COMBAT SYSTEMS-GROUND SYSTEMS DIVISION DIV GROUND SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
BML24729
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013467056
NSN
5961-01-346-7056
BML24729
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013467056
NSN
5961-01-346-7056
MFG
BAE SYSTEMS LAND & ARMAMENTS L.P. DBA US COMBAT SYSTEMS-GROUND SYSTEMS DIVISION DIV GROUND SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
MRF264
TRANSISTOR
NSN, MFG P/N
5961013467232
NSN
5961-01-346-7232
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
011-0001
TRANSISTOR
NSN, MFG P/N
5961013467233
NSN
5961-01-346-7233
MFG
ANDEEN-HAGERLING INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 NANOAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE AND 10.00 NANOAMPERES MAXIMUM OFF-STATE CURRENT, DC AND 5.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 27014-P1087 MANUFACTURERS STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
P1087
TRANSISTOR
NSN, MFG P/N
5961013467233
NSN
5961-01-346-7233
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 NANOAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE AND 10.00 NANOAMPERES MAXIMUM OFF-STATE CURRENT, DC AND 5.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 27014-P1087 MANUFACTURERS STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
SR2464
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013467234
NSN
5961-01-346-7234
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) SPECIFICATION/STANDARD DATA: 04713-SR2464 MANUFACTURERS STANDARD
Related Searches:
SR2884
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013467235
NSN
5961-01-346-7235
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SPECIFICATION/STANDARD DATA: 04713-SR2884 MANUFACTURERS STANDARD
Related Searches:
SR4312
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013467236
NSN
5961-01-346-7236
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) SPECIFICATION/STANDARD DATA: 04713-SR4312 MANUFACTURERS STANDARD
Related Searches:
SZ13042K
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013467237
NSN
5961-01-346-7237
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) SPECIFICATION/STANDARD DATA: 04713-SZ13042K MANUFACTURERS STANDARD
Related Searches:
SZ13212K
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013467238
NSN
5961-01-346-7238
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) SPECIFICATION/STANDARD DATA: 04713-SZ13212K MANUFACTURERS STANDARD
Related Searches:
SZG30339
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013467239
NSN
5961-01-346-7239
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) SPECIFICATION/STANDARD DATA: 04713-SZG30339 MANUFACTURERS STANDARD
Related Searches:
SR1663
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013467240
NSN
5961-01-346-7240
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) SPECIFICATION/STANDARD DATA: 04713-SR1663 MANUFACTURERS STANDARD
Related Searches:
SBR5218
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013467241
NSN
5961-01-346-7241
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) SPECIFICATION/STANDARD DATA: 04713-SBR5218 MANUFACTURERS STANDARD
Related Searches:
SCR5069
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013467242
NSN
5961-01-346-7242
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) SPECIFICATION/STANDARD DATA: 04713-SCR5069 MANUFACTURERS STANDARD
Related Searches:
SR4311
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013467243
NSN
5961-01-346-7243
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) SPECIFICATION/STANDARD DATA: 04713-SR4311 MANUFACTURERS STANDARD
Related Searches:
JANTXV2N3822
TRANSISTOR
NSN, MFG P/N
5961013467575
NSN
5961-01-346-7575
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N3822
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/375
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/375 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD_
Related Searches:
JANTXV2N4861
TRANSISTOR
NSN, MFG P/N
5961013467576
NSN
5961-01-346-7576
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N4861
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/385
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/385 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES
Related Searches:
JANTXV2N2906
TRANSISTOR
NSN, MFG P/N
5961013467578
NSN
5961-01-346-7578
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N2906A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/291
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/291 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES N
Related Searches:
JANTXV1N4570A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013467581
NSN
5961-01-346-7581
JANTXV1N4570A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013467581
NSN
5961-01-346-7581
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4570A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/452
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/452 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81
