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5961-01-417-8281
20 Products
DKV6522-12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014178281
NSN
5961-01-417-8281
DKV6522-12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014178281
NSN
5961-01-417-8281
MFG
SKYWORKS SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
655-1006
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014178416
NSN
5961-01-417-8416
655-1006
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014178416
NSN
5961-01-417-8416
MFG
MICRO USPD INC
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 13973-841268 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 120.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 100.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OVERALL HEIGHT: 1.150 INCHES MAXIMUM
OVERALL LENGTH: 2.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
841268-0002
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014178416
NSN
5961-01-417-8416
841268-0002
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014178416
NSN
5961-01-417-8416
MFG
LITTON SYSTEMS INC. DIV NAVIGATION SYSTEMS DIVISION
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 13973-841268 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 120.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 100.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OVERALL HEIGHT: 1.150 INCHES MAXIMUM
OVERALL LENGTH: 2.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
SA10690
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014178416
NSN
5961-01-417-8416
SA10690
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014178416
NSN
5961-01-417-8416
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 13973-841268 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 120.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 100.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OVERALL HEIGHT: 1.150 INCHES MAXIMUM
OVERALL LENGTH: 2.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
2N222A
TRANSISTOR
NSN, MFG P/N
5961014179631
NSN
5961-01-417-9631
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
TRANSISTOR
Related Searches:
FXSC3BJ6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014180133
NSN
5961-01-418-0133
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
INCLOSURE MATERIAL: METAL
SPECIAL FEATURES: LOW FORWARD VOLTAGE DROP;LOW REVERSE LEAKAGE CURRENT;LOW THERMAL IMPEDANCE;INSULATED ELECTRICAL CONNECTIONS
Related Searches:
PR5155
TRANSISTOR
NSN, MFG P/N
5961014180238
NSN
5961-01-418-0238
MFG
SPECTRIAN
Description
TRANSISTOR
Related Searches:
PR5181
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014180240
NSN
5961-01-418-0240
MFG
SPECTRIAN
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2001410-001
TRANSISTOR
NSN, MFG P/N
5961014181720
NSN
5961-01-418-1720
MFG
HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATION SYSTEMS DIVISION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 5.40 AMPERES MAXIMUM SOURCE CURRENT AND 22.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 66948-2001410 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE_
Related Searches:
IXTM6N80
TRANSISTOR
NSN, MFG P/N
5961014181720
NSN
5961-01-418-1720
MFG
SOLID STATE DEVICES INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 5.40 AMPERES MAXIMUM SOURCE CURRENT AND 22.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 66948-2001410 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE_
Related Searches:
IXTM6N80/JX
TRANSISTOR
NSN, MFG P/N
5961014181720
NSN
5961-01-418-1720
MFG
IXYS CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 5.40 AMPERES MAXIMUM SOURCE CURRENT AND 22.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 66948-2001410 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE_
Related Searches:
1N1692
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014182416
NSN
5961-01-418-2416
MFG
PICKARD AND BURNS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
011-0006
TRANSISTOR
NSN, MFG P/N
5961014182450
NSN
5961-01-418-2450
MFG
ANDEEN-HAGERLING INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 NANOAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL WIDTH: 0.135 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
P1086
TRANSISTOR
NSN, MFG P/N
5961014182450
NSN
5961-01-418-2450
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 NANOAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL WIDTH: 0.135 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
8879000116-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014182451
NSN
5961-01-418-2451
8879000116-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014182451
NSN
5961-01-418-2451
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 57057-8879000116 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 9.5 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
MDF1080
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014182451
NSN
5961-01-418-2451
MFG
ACCU-NOISE INC
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 57057-8879000116 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 9.5 MAXIMUM BREAKDOWN VOLTAGE, DC
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60CDQ45
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014182452
NSN
5961-01-418-2452
60CDQ45
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014182452
NSN
5961-01-418-2452
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 57057-8879000114 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
8879000114-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014182452
NSN
5961-01-418-2452
8879000114-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014182452
NSN
5961-01-418-2452
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 57057-8879000114 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
SEN-3032
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014182452
NSN
5961-01-418-2452
SEN-3032
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014182452
NSN
5961-01-418-2452
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 57057-8879000114 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
SSR241TX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014182452
NSN
5961-01-418-2452
SSR241TX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014182452
NSN
5961-01-418-2452
MFG
SOLID STATE DEVICES INC.
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 57057-8879000114 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
