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5961-01-352-6932
20 Products
DZ4552-584
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013526932
NSN
5961-01-352-6932
DZ4552-584
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013526932
NSN
5961-01-352-6932
MFG
HEROTEK INC.
Description
III END ITEM IDENTIFICATION: AN/USC-38
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 65.0 DEG CELSIUS JUNCTION
SPECIAL FEATURES: DIODE ASSEMBLED IN THE WAVEGUIDE MOUNT. FREQUENCY RANGE 43.5 TO 45.5 GHZ
Related Searches:
35-1507-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013524843
NSN
5961-01-352-4843
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-1507-4
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
R5031010RSWR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013524843
NSN
5961-01-352-4843
R5031010RSWR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013524843
NSN
5961-01-352-4843
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-1507-4
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
8467A59H11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013524844
NSN
5961-01-352-4844
8467A59H11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013524844
NSN
5961-01-352-4844
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 8467A59H11
MANUFACTURERS CODE: 04804
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
1296H77-50
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013524845
NSN
5961-01-352-4845
1296H77-50
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013524845
NSN
5961-01-352-4845
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 8467A78H01
MANUFACTURERS CODE: 04804
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
2N6604
TRANSISTOR
NSN, MFG P/N
5961013525270
NSN
5961-01-352-5270
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
4812-0026-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013525271
NSN
5961-01-352-5271
4812-0026-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013525271
NSN
5961-01-352-5271
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
III END ITEM IDENTIFICATION: L1011 AIRCRAFT,GENERAL INSTRUMENT CORP
Related Searches:
1N645A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013525272
NSN
5961-01-352-5272
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - UNITED KINGDOM ROYAL AIR FORCE
III END ITEM IDENTIFICATION: UK/FSC/602-PHASE III SERVO INTRODUCTION,TEXAS INSTRUMENTS INC
Related Searches:
5014490-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013525272
NSN
5961-01-352-5272
5014490-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013525272
NSN
5961-01-352-5272
MFG
THALES TRAINING & SIMULATION LTD
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - UNITED KINGDOM ROYAL AIR FORCE
III END ITEM IDENTIFICATION: UK/FSC/602-PHASE III SERVO INTRODUCTION,TEXAS INSTRUMENTS INC
Related Searches:
900-20086
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013526662
NSN
5961-01-352-6662
900-20086
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013526662
NSN
5961-01-352-6662
MFG
POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
1C6641G1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013526680
NSN
5961-01-352-6680
1C6641G1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013526680
NSN
5961-01-352-6680
MFG
GE AVIATIONS SYSTEMS LLC DBA GE AVIATION DIV ELECTRICAL POWER-POMPANO
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
52794
TRANSISTOR
NSN, MFG P/N
5961013526929
NSN
5961-01-352-6929
MFG
GEMS SENSORS INC
Description
III END ITEM IDENTIFICATION: SIGNAL CONDITIONER SC-53550
MOUNTING METHOD: TERMINAL
Related Searches:
698290
TRANSISTOR
NSN, MFG P/N
5961013526930
NSN
5961-01-352-6930
MFG
FLUKE CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
MPS6562-D262
TRANSISTOR
NSN, MFG P/N
5961013526930
NSN
5961-01-352-6930
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
ES5204-14
TRANSISTOR
NSN, MFG P/N
5961013526931
NSN
5961-01-352-6931
MFG
DRS SUSTAINMENT SYSTEMS INC. DIV DRS SUSTAINMENT SYSTEMS INC. USE CAGE CODE 98255 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.795 INCHES NOMINAL
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
HC1005
TRANSISTOR
NSN, MFG P/N
5961013526931
NSN
5961-01-352-6931
MFG
MICROSEMI CORP. - POWER PRODUCTS GROUP DBA ADVANCED POWER TECHNOLOGY INC DIV MICROSEMI CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.795 INCHES NOMINAL
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
IXTL1205
TRANSISTOR
NSN, MFG P/N
5961013526931
NSN
5961-01-352-6931
MFG
IXYS CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.795 INCHES NOMINAL
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
MHM12N50HXLF2
TRANSISTOR
NSN, MFG P/N
5961013526931
NSN
5961-01-352-6931
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.795 INCHES NOMINAL
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
OM1398SA
TRANSISTOR
NSN, MFG P/N
5961013526931
NSN
5961-01-352-6931
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.795 INCHES NOMINAL
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
997331-8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013526932
NSN
5961-01-352-6932
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: AN/USC-38
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 65.0 DEG CELSIUS JUNCTION
SPECIAL FEATURES: DIODE ASSEMBLED IN THE WAVEGUIDE MOUNT. FREQUENCY RANGE 43.5 TO 45.5 GHZ
