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5961-01-579-0701
20 Products
91385856
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015790701
NSN
5961-01-579-0701
91385856
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015790701
NSN
5961-01-579-0701
MFG
THALES
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: THREE THERMINAL ADJUSTABLE REGULATOR
SPECIAL FEATURES: OUTPUT IS SHORT CIRCUIT PROTECTED, ADJUSTABLE OUTPUT DOWN TO 1.2V
Related Searches:
99182384
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015785496
NSN
5961-01-578-5496
MFG
THALES
Description
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: CLIP
OVERALL HEIGHT: 1.100 INCHES NOMINAL
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 2.500 INCHES NOMINAL
SPECIAL FEATURES: NOT FOR LIFE SUPPORT APPLIANCES OR DEVICES
Related Searches:
BAV23
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015785496
NSN
5961-01-578-5496
MFG
PHILIPS SEMICONDUCTORS INC
Description
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: CLIP
OVERALL HEIGHT: 1.100 INCHES NOMINAL
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 2.500 INCHES NOMINAL
SPECIAL FEATURES: NOT FOR LIFE SUPPORT APPLIANCES OR DEVICES
Related Searches:
99213123
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015785499
NSN
5961-01-578-5499
MFG
THALES
Description
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: CLIP
OVERALL HEIGHT: 1.1 MILLIMETERS NOMINAL
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 2.5 MILLIMETERS NOMINAL
SPECIAL FEATURES: PRODUCTS NOT DESIGNED FOR LIFE SUPPORT APPLIANCES OR DEVICES
Related Searches:
BAV23S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015785499
NSN
5961-01-578-5499
MFG
PHILIPS SEMICONDUCTORS INC
Description
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: CLIP
OVERALL HEIGHT: 1.1 MILLIMETERS NOMINAL
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 2.5 MILLIMETERS NOMINAL
SPECIAL FEATURES: PRODUCTS NOT DESIGNED FOR LIFE SUPPORT APPLIANCES OR DEVICES
Related Searches:
480019A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015785518
NSN
5961-01-578-5518
480019A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015785518
NSN
5961-01-578-5518
MFG
THERMEX-THERMATRON INC
Description
III END ITEM IDENTIFICATION: NUCLEAR POWER PLANTS
Related Searches:
570001
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015785527
NSN
5961-01-578-5527
MFG
THERMEX-THERMATRON INC
Description
III END ITEM IDENTIFICATION: NUCLEAR POWER PLANTS
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TUBE
Related Searches:
99211525
TRANSISTOR
NSN, MFG P/N
5961015786194
NSN
5961-01-578-6194
MFG
THALES
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 125.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SPECIAL FEATURES: POWER MOSFET; 75 AMPS
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 30.0 NOMINAL DRAIN TO GATE VOLTAGE
Related Searches:
MTB75N05HD
TRANSISTOR
NSN, MFG P/N
5961015786194
NSN
5961-01-578-6194
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 125.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SPECIAL FEATURES: POWER MOSFET; 75 AMPS
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 30.0 NOMINAL DRAIN TO GATE VOLTAGE
Related Searches:
1831940-25
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015787018
NSN
5961-01-578-7018
1831940-25
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015787018
NSN
5961-01-578-7018
MFG
AVINEX INC
Description
III END ITEM IDENTIFICATION: E-3A AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
Related Searches:
1249959-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015787020
NSN
5961-01-578-7020
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS
Description
III END ITEM IDENTIFICATION: E-3A AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
Related Searches:
1838307-31
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015787039
NSN
5961-01-578-7039
1838307-31
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015787039
NSN
5961-01-578-7039
MFG
AVINEX INC
Description
III END ITEM IDENTIFICATION: E-3A AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
Related Searches:
IXFT12N100Q
TRANSISTOR
NSN, MFG P/N
5961015788002
NSN
5961-01-578-8002
MFG
IXYS CORPORATION
Description
III END ITEM IDENTIFICATION: MELTEM 2CC8
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR
SPECIAL FEATURES: SSM-SZ-4200-04
Related Searches:
SA12A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015788462
NSN
5961-01-578-8462
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSIENT VOLTAGE SUPPRESSOR
SPECIAL FEATURES: PACKAGE TYPE, DO-15; TYPE, AXIAL-LEAD; VRWM REVERSE STANDOFF VOLTAGE, 12.0; VBR BREAKDOWN VOLTAGE MIN, 13.3; VBR BREAKDOWN VOLTAGE MAX, 14.7; 500 WATT PEAK PULSE POWER CAPABILITY; GLASS PASSIVATED JUNCTION; TEMPERATURE RANGE, -65 TO 175 DEGREES CLAMPING
~1: VOLTAGE, 19.9; PEAK PULSE CURRENT, 25.1
Related Searches:
MSV38087-E28
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015789425
NSN
5961-01-578-9425
MSV38087-E28
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015789425
NSN
5961-01-578-9425
MFG
AEROFLEX / METELICS INC.
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: 45V SILICON VARACTOR DIODES MSV38,000 SERIES
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 50.0 MILLIMETERS MAXIMUM
OVERALL LENGTH: 285.0 MILLIMETERS MINIMUM AND 295.0 MILLIMETERS MAXIMUM
SPECIAL FEATURES: BUILT TOUGH WITH FULLY PASSIVATED MESA CONSTRUCTION AND AEROFLEX/METELICS TRIMETALLIZATION; 4.8 MIN TUNING RATIO, OPERATING TEMP RANGE: -65 TO +150 DEG C.
TERMINAL CIRCLE DIAMETER: 3.0 MILLIMETERS MINIMUM AND 5.0 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 100.0 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
SDS045V21800A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015789425
NSN
5961-01-578-9425
SDS045V21800A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015789425
NSN
5961-01-578-9425
MFG
RAYTHEON SYSTEMS LTD
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: 45V SILICON VARACTOR DIODES MSV38,000 SERIES
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 50.0 MILLIMETERS MAXIMUM
OVERALL LENGTH: 285.0 MILLIMETERS MINIMUM AND 295.0 MILLIMETERS MAXIMUM
SPECIAL FEATURES: BUILT TOUGH WITH FULLY PASSIVATED MESA CONSTRUCTION AND AEROFLEX/METELICS TRIMETALLIZATION; 4.8 MIN TUNING RATIO, OPERATING TEMP RANGE: -65 TO +150 DEG C.
TERMINAL CIRCLE DIAMETER: 3.0 MILLIMETERS MINIMUM AND 5.0 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 100.0 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
121NQ040
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015790230
NSN
5961-01-579-0230
121NQ040
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015790230
NSN
5961-01-579-0230
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 120.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.56 FORWARD VOLTAGE, AVERAGE AND 40.00 WORKING PEAK REVERSE VOLTAGE
MOUNTING METHOD: SLOT AND UNTHREADED HOLE
Related Searches:
91805583
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015790230
NSN
5961-01-579-0230
91805583
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015790230
NSN
5961-01-579-0230
MFG
THALES
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 120.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.56 FORWARD VOLTAGE, AVERAGE AND 40.00 WORKING PEAK REVERSE VOLTAGE
MOUNTING METHOD: SLOT AND UNTHREADED HOLE
Related Searches:
91765028
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015790694
NSN
5961-01-579-0694
91765028
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015790694
NSN
5961-01-579-0694
MFG
THALES
Description
III END ITEM IDENTIFICATION: TENSION REGULATOR
III PART NAME ASSIGNED BY CONTROLLING AGENCY: PRECISION MICROPOWER SHUNT VOLTAGE REFERENCE
SPECIAL FEATURES: TOLERATES CAPACITIVE LOADS, LOW OUTPUT NOISE
Related Searches:
LM4040AIM3-2.5 ROHS
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015790694
NSN
5961-01-579-0694
LM4040AIM3-2.5 ROHS
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015790694
NSN
5961-01-579-0694
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
III END ITEM IDENTIFICATION: TENSION REGULATOR
III PART NAME ASSIGNED BY CONTROLLING AGENCY: PRECISION MICROPOWER SHUNT VOLTAGE REFERENCE
SPECIAL FEATURES: TOLERATES CAPACITIVE LOADS, LOW OUTPUT NOISE
