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5961-01-478-8778
20 Products
SMBT2222A
TRANSISTOR
NSN, MFG P/N
5961014788778
NSN
5961-01-478-8778
MFG
SIEMENS COMPONENTS INC INTEGRATED CIRCUIT DIV
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 50-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
III END ITEM IDENTIFICATION: M-1 ABRAMS TANK
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 19200
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 12467085
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 1.110 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.050 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.500 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 330.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 19200-12467085 MANUFACTURERS SOURCE CONTROL
TERMINAL LENGTH: 1.110 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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JANS1N4483US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014789755
NSN
5961-01-478-9755
JANS1N4483US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014789755
NSN
5961-01-478-9755
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANS1N4483US
III END ITEM IDENTIFICATION: KG-207(CRYPTO)
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: COMPRESSION
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: UNLEADED SURFACE MOUNT,SQUARE ENDCAP
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 58.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
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007-0086-00
TRANSISTOR
NSN, MFG P/N
5961014790165
NSN
5961-01-479-0165
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE
Description
TRANSISTOR
Related Searches:
842-500-75
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014790772
NSN
5961-01-479-0772
842-500-75
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014790772
NSN
5961-01-479-0772
MFG
AMETEK PROGRAMMABLE POWER INC.
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
INCLOSURE MATERIAL: METAL AND PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 35.5 MILLIMETERS MAXIMUM
OVERALL LENGTH: 105.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 35.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: 500 VOLTS CLASS POWER MODULE TRANSISTORS; POWER TRANSISTORS AND FREE WHEELS ARE BULIT INTO ONE PACKAGE; ALL TERMINALS INSULATED FROM MOUNTING PLATE; BEST SUITED FOR MOTOR CONTROL APPLICATIONS WITH 200 VAC INPUT AND POWER SUPPLIES; 2 INPUT AND 4 OUTPUT
TERMINAL TYPE AND QUANTITY: 6 SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 NOMINAL COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED 1ST TRANSISTOR 600.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN 2ND TRANSISTOR 600.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN 3RD TRANSISTOR
~1: TERMINALS
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JANS1N6324US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014790810
NSN
5961-01-479-0810
JANS1N6324US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014790810
NSN
5961-01-479-0810
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANS1N6324US
III END ITEM IDENTIFICATION: KG-207(CRYPTO)
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: COMPRESSION
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/533
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: UNLEADED SURFACE MOUNT,SQUARE ENDCAP
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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0N641280-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014791230
NSN
5961-01-479-1230
0N641280-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014791230
NSN
5961-01-479-1230
MFG
NATIONAL SECURITY AGENCY
Description
III END ITEM IDENTIFICATION: KG-207(CRYPTO)
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CDLL1A100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014791230
NSN
5961-01-479-1230
MFG
COMPENSATED DEVICES INC
Description
III END ITEM IDENTIFICATION: KG-207(CRYPTO)
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0N641283-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014791231
NSN
5961-01-479-1231
0N641283-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014791231
NSN
5961-01-479-1231
MFG
NATIONAL SECURITY AGENCY
Description
III END ITEM IDENTIFICATION: KG-207(CRYPTO)
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JANS1N6642US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014791979
NSN
5961-01-479-1979
JANS1N6642US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014791979
NSN
5961-01-479-1979
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANS1N6642US
III END ITEM IDENTIFICATION: KG-207(CRYPTO)
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: COMPRESSION
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/578
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: UNLEADED OR SURFACE MOUNTED(SQUARE END CAP DIODE)
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC
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JANS1N6333US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793056
NSN
5961-01-479-3056
JANS1N6333US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793056
NSN
5961-01-479-3056
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 33.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANS1N6333US
III END ITEM IDENTIFICATION: KG-207(CRYPTO)
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: COMPRESSION
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/533
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: UNLEADED OR SURFACE MOUNTED(SQUARE END CAP DIODE)
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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JANS1N5811US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793057
NSN
5961-01-479-3057
JANS1N5811US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793057
NSN
5961-01-479-3057
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANS1N5811US
III END ITEM IDENTIFICATION: KG-207(CRYPTO)
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: COMPRESSION
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: UNLEADED SURFACE MOUNT,SQUARE ENDCAP
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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JANS1N6327US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793058
NSN
5961-01-479-3058
JANS1N6327US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793058
NSN
5961-01-479-3058
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 13.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANS1N6327US
III END ITEM IDENTIFICATION: KG-207(CRYPTO)
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: COMPRESSION
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/533
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: UNLEADED OR SURFACE MOUNTED(SQUARE END CAP DIODE)
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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589R131H01
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014793227
NSN
5961-01-479-3227
589R131H01
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014793227
NSN
5961-01-479-3227
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
III END ITEM IDENTIFICATION: AIRPORT SURVEILLANCE RADAR 9(ASR9)
SPECIAL FEATURES: FUNCTION, REVERSE BLOCKING DIODE, THYRISTOR; REFERENCE DATA, 1N1A11A3Q1, TI-6310.39, FA 10064, PG 8-144, (4/1/99), PG 8-142, (11/2001)
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FK23041P1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014793543
NSN
5961-01-479-3543
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: F18 E/F FIGHTER AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE
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SM2033
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014793543
NSN
5961-01-479-3543
MFG
MICROSEMI CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: F18 E/F FIGHTER AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE
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SSM5420X
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014793543
NSN
5961-01-479-3543
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: F18 E/F FIGHTER AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE
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JANTX1N5618US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793549
NSN
5961-01-479-3549
JANTX1N5618US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793549
NSN
5961-01-479-3549
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5618US
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-41
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.168 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 38.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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JANTX1N969BUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793565
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5961-01-479-3565
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793565
NSN
5961-01-479-3565
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: AGAV
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N969BUR-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
III END ITEM IDENTIFICATION: ELECTRONIC COMPONENT ASSY
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
OVERALL DIAMETER: 0.080 INCHES MAXIMUM
OVERALL LENGTH: 2.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MULTIPLE MOUNTING ZENER DIAODE; HERMATICALLY SEALED GLASS CASE; EXTERNAL SURFACES ARE CORROSION RESISTANT AND LEADS SOLDERABLE; THERMAL RESISTANCE: 200 DEGREES CELSIUS/W (TYPICAL) JUNCTION TO LEAD AT 0.375 INCHES FROM BODY
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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JANTX1N4960US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793597
NSN
5961-01-479-3597
JANTX1N4960US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793597
NSN
5961-01-479-3597
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: AGAV
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4960US
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
III END ITEM IDENTIFICATION: ELECTRONIC COMPONENT ASSY
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
OVERALL DIAMETER: 0.135 INCHES MINIMUM
OVERALL LENGTH: 2.180 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 5.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: GLASS ZENER DIODE; HERMATICALL SEALED GLASS CASING; LEAD MATERIAL: SILVER CLAD COPPER; TRIPLE LAYER PASSIVATION; VERY LOW THERMAL IMPEDANCE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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FK23010P1
TRANSISTOR
NSN, MFG P/N
5961014793601
NSN
5961-01-479-3601
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR, AIRCRAFT
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
