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5961-01-475-6872
20 Products
295753
LED ASSY
NSN, MFG P/N
5961014756872
NSN
5961-01-475-6872
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
III END ITEM IDENTIFICATION: 5895014619786
Related Searches:
1N5907JANTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751964
NSN
5961-01-475-1964
1N5907JANTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751964
NSN
5961-01-475-1964
MFG
MICROSEMI CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.5 MILLIMETERS MAXIMUM
OVERALL LENGTH: 71.6 MILLIMETERS MINIMUM AND 72.5 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 31.8 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 NOMINAL REVERSE VOLTAGE, PEAK AND 6.0 MINIMUM BREAKDOWN VOLTAGE, DC
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1N6113A-JANTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751965
NSN
5961-01-475-1965
1N6113A-JANTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751965
NSN
5961-01-475-1965
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.1 MILLIMETERS MINIMUM AND 3.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 54.3 MILLIMETERS MINIMUM AND 72.3 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM AND 33.0 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 19.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 15.2 NOMINAL WORKING PEAK REVERSE VOLTAGE
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1N6113JANTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751966
NSN
5961-01-475-1966
1N6113JANTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751966
NSN
5961-01-475-1966
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.1 MILLIMETERS MINIMUM AND 3.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 54.3 MILLIMETERS MINIMUM AND 70.7 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM AND 33.0 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 15.2 NOMINAL WORKING PEAK REVERSE VOLTAGE
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1N6159-JANTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751967
NSN
5961-01-475-1967
1N6159-JANTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751967
NSN
5961-01-475-1967
MFG
MICROSEMI CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 4.7 MILLIMETERS MAXIMUM
OVERALL LENGTH: 55.5 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 46.1 MINIMUM BREAKDOWN VOLTAGE, DC
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1N5711-1JANTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751968
NSN
5961-01-475-1968
1N5711-1JANTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751968
NSN
5961-01-475-1968
MFG
COMPENSATED DEVICES INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.7 MILLIMETERS MINIMUM AND 1.9 MILLIMETERS MAXIMUM
OVERALL LENGTH: 54.6 MILLIMETERS MINIMUM AND 55.1 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 0.4 MAXIMUM FORWARD VOLTAGE, DC AND 50.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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1N6642JANTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751971
NSN
5961-01-475-1971
1N6642JANTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751971
NSN
5961-01-475-1971
MFG
MICROSEMI CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.9 MILLIMETERS MAXIMUM
OVERALL LENGTH: 54.9 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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2N6796TX
TRANSISTOR
NSN, MFG P/N
5961014753011
NSN
5961-01-475-3011
MFG
INTERSIL CORPORATION
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.740 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
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2N6901TX
TRANSISTOR
NSN, MFG P/N
5961014753032
NSN
5961-01-475-3032
MFG
INTERSIL CORPORATION
Description
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 2.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
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1N4002CT-ND
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014753437
NSN
5961-01-475-3437
1N4002CT-ND
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014753437
NSN
5961-01-475-3437
MFG
DIGI-KEY CORPORATION
Description
III END ITEM IDENTIFICATION: E/IFSCM ENDITEM
Related Searches:
JANTX1N6629
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014753439
NSN
5961-01-475-3439
JANTX1N6629
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014753439
NSN
5961-01-475-3439
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6629
III END ITEM IDENTIFICATION: E/IFSCM F15 AUTO FL C
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/590H
SPEC/STD CONTROLLING DATA:
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140000 ITEM 46
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014753447
NSN
5961-01-475-3447
140000 ITEM 46
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014753447
NSN
5961-01-475-3447
MFG
GEMS SENSORS INC
Description
III END ITEM IDENTIFICATION: E/IFSCM NAVY EQUIPMENT
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134755PC8
TRANSISTOR
NSN, MFG P/N
5961014754423
NSN
5961-01-475-4423
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6786
SPEC/STD CONTROLLING DATA:
Related Searches:
JANTX2N6786
TRANSISTOR
NSN, MFG P/N
5961014754423
NSN
5961-01-475-4423
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6786
SPEC/STD CONTROLLING DATA:
Related Searches:
1N4007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014754591
NSN
5961-01-475-4591
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.028 INCHES MINIMUM AND 0.034 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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220560
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014754591
NSN
5961-01-475-4591
MFG
URO VEHICULOS ESPECIALES S.A.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.028 INCHES MINIMUM AND 0.034 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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365282
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014754591
NSN
5961-01-475-4591
MFG
FARNELL PLC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.028 INCHES MINIMUM AND 0.034 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
MIC201
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014754591
NSN
5961-01-475-4591
MFG
CRESTCHIC LTD
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.028 INCHES MINIMUM AND 0.034 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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44F242280PC59
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014754640
NSN
5961-01-475-4640
44F242280PC59
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014754640
NSN
5961-01-475-4640
MFG
WARD LEONARD ELECTRIC COMPANY INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 4JA3511MF1AD1
MANUFACTURERS CODE: 63743
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
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MB104
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014754755
NSN
5961-01-475-4755
MB104
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014754755
NSN
5961-01-475-4755
MFG
DIODES INC POWER COMPONENTS DIV
Description
III END ITEM IDENTIFICATION: FLIGHT SIMULATOR, SEA KING, CAE ELECTRONICS LTD
