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5961-01-488-7435
20 Products
2MBI600NT-060
TRANSISTOR
NSN, MFG P/N
5961014887435
NSN
5961-01-488-7435
MFG
COLLMER SEMICONDUCTOR INC
Description
FEATURES PROVIDED: HIGH POWER
FUNCTION FOR WHICH DESIGNED: SWITCHING
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 30.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 109.0 MILLIMETERS MINIMUM AND 111.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 79.0 MILLIMETERS MINIMUM AND 81.0 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 2500.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SPECIAL FEATURES: CONTINUOUS COLLECTOR CURRENT 600.0 AMPS; STORAGE TEMPERATURE MINUS 40 DEGREES C, PLUS 125 DEGREES C
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE SHORT-CIRCUITEDTO EMITTER
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2N5031
TRANSISTOR
NSN, MFG P/N
5961014875769
NSN
5961-01-487-5769
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
III END ITEM IDENTIFICATION: 5865-01-346-4772
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.670 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MARKING. A YELLOW COLORED DOT SHALL BE PLACED ON THE DEVICE USING EPOXY-BASED INK AFTER SCREENING.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 108.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 300.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 15.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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A3177363-4
TRANSISTOR
NSN, MFG P/N
5961014875769
NSN
5961-01-487-5769
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
III END ITEM IDENTIFICATION: 5865-01-346-4772
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.670 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MARKING. A YELLOW COLORED DOT SHALL BE PLACED ON THE DEVICE USING EPOXY-BASED INK AFTER SCREENING.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 108.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 300.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 15.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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1N5418JTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014876455
NSN
5961-01-487-6455
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
III END ITEM IDENTIFICATION: RADAR SYSTEM
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GDR1168-4401
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014877511
NSN
5961-01-487-7511
GDR1168-4401
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014877511
NSN
5961-01-487-7511
MFG
ALSTOM POWER CONVERSION INC.
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: VARIABLE SPEED DRIVE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: INAVY: RECTIFIER MODULE
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GD282-4501
TRANSISTOR
NSN, MFG P/N
5961014877512
NSN
5961-01-487-7512
MFG
ALSTOM POWER CONVERSION INC.
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: VARIABLE SPEED DRIVE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: INAVY: TRANSISTOR MODULE
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GDD282-4501
TRANSISTOR
NSN, MFG P/N
5961014877512
NSN
5961-01-487-7512
MFG
CEGELEC AUTOMATION INC DIV OF GENERAL ELECTRIC CO PLC OF ENGLAND
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: VARIABLE SPEED DRIVE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: INAVY: TRANSISTOR MODULE
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JANTX1N6317DUS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014878143
NSN
5961-01-487-8143
JANTX1N6317DUS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014878143
NSN
5961-01-487-8143
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6317DUS
III END ITEM IDENTIFICATION: JOINT STARS TARGET RADAR SYSTEM
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/533
OVERALL HEIGHT: 0.070 INCHES MINIMUM AND 0.096 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
OVERALL WIDTH: 0.070 INCHES MINIMUM AND 0.096 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 NOMINAL NOMINAL REGULATOR VOLTAGE AND 0.4 NOMINAL REGULATOR VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -0.5 TO 0.5
Related Searches:
JANTX1N645UR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014878164
NSN
5961-01-487-8164
JANTX1N645UR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014878164
NSN
5961-01-487-8164
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N645UR-1
III END ITEM IDENTIFICATION: JOINT STARS TARGET RADAR SYSTEM
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/240
OVERALL DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 270.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 225.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
51029-104
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014878325
NSN
5961-01-487-8325
MFG
SAFE FLIGHT INSTRUMENT CORPORATION
Description
SPECIAL FEATURES: DIODE
Related Searches:
51029-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014878329
NSN
5961-01-487-8329
MFG
SAFE FLIGHT INSTRUMENT CORPORATION
Description
SPECIAL FEATURES: DIODE
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2N4391
TRANSISTOR
NSN, MFG P/N
5961014878616
NSN
5961-01-487-8616
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 2N4391
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
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26MT80
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014878618
NSN
5961-01-487-8618
26MT80
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014878618
NSN
5961-01-487-8618
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MOUNTING METHOD: UNTHREADED HOLE
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1N5617
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014878940
NSN
5961-01-487-8940
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
208161
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014884105
NSN
5961-01-488-4105
MFG
STORED ENERGY SYSTEMS A LIMITED LIABILITY COMPANY DBA S E N S A LIMITED LIABILITY COMPANY
Description
III END ITEM IDENTIFICATION: BATT; ARLEIGH BURKE CLASS DDG
SPECIAL FEATURES: DIODE ASSEMBLY, REVERSE POLARITY PROTECTION
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30BQ100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014884454
NSN
5961-01-488-4454
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 2.00 MILLIMETERS MINIMUM AND 2.62 MILLIMETERS MAXIMUM
OVERALL LENGTH: 6.60 MILLIMETERS MINIMUM AND 7.11 MILLIMETERS MAXIMUM
OVERALL WIDTH: 5.59 MILLIMETERS MINIMUM AND 6.22 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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2N2222A
TRANSISTOR
NSN, MFG P/N
5961014884457
NSN
5961-01-488-4457
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
III END ITEM IDENTIFICATION: TORNADO
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
5HC13952-101
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014885788
NSN
5961-01-488-5788
5HC13952-101
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014885788
NSN
5961-01-488-5788
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
III END ITEM IDENTIFICATION: F/A-22 RAPTOR
Related Searches:
06-12036-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014887425
NSN
5961-01-488-7425
06-12036-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014887425
NSN
5961-01-488-7425
MFG
SIERRA NEVADA CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.185 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
OVERALL LENGTH: 1.599 INCHES MINIMUM AND 1.645 INCHES MAXIMUM
OVERALL WIDTH: 0.610 INCHES MINIMUM AND 0.640 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 640.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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DSEK60-06A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014887425
NSN
5961-01-488-7425
DSEK60-06A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014887425
NSN
5961-01-488-7425
MFG
IXYS CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.185 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
OVERALL LENGTH: 1.599 INCHES MINIMUM AND 1.645 INCHES MAXIMUM
OVERALL WIDTH: 0.610 INCHES MINIMUM AND 0.640 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 640.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
