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5961-01-509-3115

20 Products

100014-2

TRANSISTOR

NSN, MFG P/N

5961015093115

NSN

5961-01-509-3115

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100014-2

TRANSISTOR

NSN, MFG P/N

5961015093115

NSN

5961-01-509-3115

MFG

MARATHONNORCO AEROSPACE INC. DBA MARATHON BATTERY

6012285-001

TRANSISTOR

NSN, MFG P/N

5961015086987

NSN

5961-01-508-6987

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6012285-001

TRANSISTOR

NSN, MFG P/N

5961015086987

NSN

5961-01-508-6987

MFG

BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: AIR COMBAT MANEUVERING INSTRUMENTATION (ACMI)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 4.7 MILLIMETERS MINIMUM AND 5.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 20.8 MILLIMETERS MINIMUM AND 21.4 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.7 MILLIMETERS MINIMUM AND 16.2 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 WATTS NOMINAL COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER

DSEP60-12A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015087007

NSN

5961-01-508-7007

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DSEP60-12A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015087007

NSN

5961-01-508-7007

MFG

IXYS CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
III END ITEM IDENTIFICATION: AIR COMBAT MANEUVERING INSTRUMENTATION (ACMI)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR,DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 4.7 MILLIMETERS MINIMUM AND 16.2 MILLIMETERS MAXIMUM
OVERALL LENGTH: 20.8 MILLIMETERS MINIMUM AND 21.4 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.7 MILLIMETERS MINIMUM AND 16.2 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 230.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

MMAD1106

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961015087032

NSN

5961-01-508-7032

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MMAD1106

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961015087032

NSN

5961-01-508-7032

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

COMPONENT NAME AND QUANTITY: 8 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC SINGLE SEMICONDUCTOR DEVICE DIODE
III END ITEM IDENTIFICATION: CORE B INSTALL
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.053 INCHES MINIMUM AND 0.069 INCHES MAXIMUM
OVERALL LENGTH: 0.336 INCHES MINIMUM AND 0.344 INCHES MAXIMUM
OVERALL WIDTH: 0.228 INCHES MINIMUM AND 0.244 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 90.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE

356A1451P110

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015087039

NSN

5961-01-508-7039

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356A1451P110

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015087039

NSN

5961-01-508-7039

MFG

BAE SYSTEMS CONTROLS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
III END ITEM IDENTIFICATION: AIR COMBAT MANUVERING INSTRUMENTATION (ACMI)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 1.9 MILLIMETERS MINIMUM AND 2.4 MILLIMETERS MAXIMUM
OVERALL LENGTH: 6.6 MILLIMETERS MINIMUM AND 7.1 MILLIMETERS MAXIMUM
OVERALL WIDTH: 5.5 MILLIMETERS MINIMUM AND 6.1 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

MURS360T3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015087039

NSN

5961-01-508-7039

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MURS360T3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015087039

NSN

5961-01-508-7039

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
III END ITEM IDENTIFICATION: AIR COMBAT MANUVERING INSTRUMENTATION (ACMI)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 1.9 MILLIMETERS MINIMUM AND 2.4 MILLIMETERS MAXIMUM
OVERALL LENGTH: 6.6 MILLIMETERS MINIMUM AND 7.1 MILLIMETERS MAXIMUM
OVERALL WIDTH: 5.5 MILLIMETERS MINIMUM AND 6.1 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

RHRU100120

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015087329

NSN

5961-01-508-7329

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RHRU100120

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015087329

NSN

5961-01-508-7329

MFG

FUTURE ELECTRONICS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 200.00 AMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE
III END ITEM IDENTIFICATION: AIR COMBAT MANEUVERING INSTRUMENTATION (ACMI)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: 100A,1200V HYPERFAST DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.165 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.610 INCHES MINIMUM AND 0.628 INCHES MAXIMUM
OVERALL WIDTH: 0.480 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 WATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

RA-2983

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015087771

NSN

5961-01-508-7771

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RA-2983

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015087771

NSN

5961-01-508-7771

MFG

VOLTAGE MULTIPLIERS INC. DBA V M I

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4000.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: AIR COMBAT MANEUVERING INSTRUMENTATION (ACMI)
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.600 INCHES MINIMUM AND 1.000 INCHES MAXIMUM
OVERALL LENGTH: 1.300 INCHES MINIMUM AND 1.700 INCHES MAXIMUM
OVERALL WIDTH: 1.300 INCHES MINIMUM AND 1.700 INCHES MAXIMUM
SPECIAL FEATURES: REQUESTED NAME RECTFIER,BRIDGE
TERMINAL TYPE AND QUANTITY: 4 TERMINAL LUG

2SK117BL

TRANSISTOR

NSN, MFG P/N

5961015087934

NSN

5961-01-508-7934

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2SK117BL

TRANSISTOR

NSN, MFG P/N

5961015087934

NSN

5961-01-508-7934

MFG

LEADER INSTRUMENTS CORPORATION

Description

III END ITEM IDENTIFICATION: DIGITAL METER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: FTE TRANSISTOR FOR DIGITAL METER

LL-H56-2140

TRANSISTOR

NSN, MFG P/N

5961015087934

NSN

5961-01-508-7934

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LL-H56-2140

TRANSISTOR

NSN, MFG P/N

5961015087934

NSN

5961-01-508-7934

MFG

NAVAL MEDICAL MATERIAL SUPPORT COMMAND DETACHMENT

Description

III END ITEM IDENTIFICATION: DIGITAL METER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: FTE TRANSISTOR FOR DIGITAL METER

11480969

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961015089354

NSN

5961-01-508-9354

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11480969

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961015089354

NSN

5961-01-508-9354

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: MISSILE, PATRIOT
SPECIAL FEATURES: SELECT FROM MIS-19836/60. THIS ITEM SHALL CONSIST OF FOUR TRANSISTORS MATCHED FOR STORAGE TIME AS DEFINED IN TABLE 1, DRAWING 11480969, CAGE 18876.

1N3595-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015089485

NSN

5961-01-508-9485

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1N3595-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015089485

NSN

5961-01-508-9485

MFG

MICRO USPD INC

Description

INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES NOMINAL
OVERALL LENGTH: 0.200 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER: 0.020 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

1N5420

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015089486

NSN

5961-01-508-9486

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1N5420

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015089486

NSN

5961-01-508-9486

MFG

MICRO USPD INC

Description

CAPACITANCE RATING IN PICOFARADS: 120.0 MAXIMUM
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.135 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

31710-ZW5-003

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015090163

NSN

5961-01-509-0163

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31710-ZW5-003

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015090163

NSN

5961-01-509-0163

MFG

SLIDELL MARINE INC

Description

III END ITEM IDENTIFICATION: ENGINE, OUTBOARD, MODEL BF130A2XA STD ROTATION AND BF130A2XCA COUNTER ROTATION.

68-269

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015090408

NSN

5961-01-509-0408

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68-269

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015090408

NSN

5961-01-509-0408

MFG

CRANE CARRIER COMPANY

Description

III END ITEM IDENTIFICATION: 2320-01-452-5579
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG

SHF1306

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015090560

NSN

5961-01-509-0560

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SHF1306

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015090560

NSN

5961-01-509-0560

MFG

SOLID STATE DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 75.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

734-139-9101

TRANSISTOR

NSN, MFG P/N

5961015091311

NSN

5961-01-509-1311

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734-139-9101

TRANSISTOR

NSN, MFG P/N

5961015091311

NSN

5961-01-509-1311

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON

Description

CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS AND 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM BASE CURRENT, INSTANTANEOUS
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR,SILICON,N-P-N,HIGH CURRENT
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 1.328 INCHES MINIMUM AND 1.358 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 2 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 170.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

STX139-9101

TRANSISTOR

NSN, MFG P/N

5961015091311

NSN

5961-01-509-1311

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STX139-9101

TRANSISTOR

NSN, MFG P/N

5961015091311

NSN

5961-01-509-1311

MFG

SOLID STATE DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS AND 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM BASE CURRENT, INSTANTANEOUS
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR,SILICON,N-P-N,HIGH CURRENT
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 1.328 INCHES MINIMUM AND 1.358 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 2 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 170.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

CBR35-060P

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015093011

NSN

5961-01-509-3011

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CBR35-060P

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015093011

NSN

5961-01-509-3011

MFG

CENTRAL SEMICONDUCTOR CORP DIV CENTRAL STATE INDUSTRIES INC

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
SPECIAL FEATURES: IO(AMPS) - 35; IO(AMPS) @TC (C DEG) - 60; VF MAX @IF - 1.2V @ 17.5A; IR MAX @VRRM - 10UA

STE38NB50

TRANSISTOR

NSN, MFG P/N

5961015093021

NSN

5961-01-509-3021

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STE38NB50

TRANSISTOR

NSN, MFG P/N

5961015093021

NSN

5961-01-509-3021

MFG

STMICROELECTRONICS INC

Description

CURRENT RATING PER CHARACTERISTIC: 38.00 AMPERES NOMINAL DRAIN CURRENT
OVERALL HEIGHT: 0.466 INCHES MINIMUM AND 0.480 INCHES MAXIMUM
OVERALL LENGTH: 1.488 INCHES MINIMUM AND 1.503 INCHES MAXIMUM
OVERALL WIDTH: 0.990 INCHES MINIMUM AND 1.003 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SPECIAL FEATURES: ISOTOP POWERMESH MOSFET; N CHANNEL, 0.11 OHMS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL DRAIN TO SOURCE VOLTAGE