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5961-01-539-7102
20 Products
MGFC36V5258
TRANSISTOR
NSN, MFG P/N
5961015397102
NSN
5961-01-539-7102
MFG
MITSUBISHI INTERNATIONAL CORPORATION DIV SEMICONDUCTOR AND ELECTRONIC DEVICES DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 1.10 AMPERES NOMINAL DRAIN CURRENT
FEATURES PROVIDED: HIGH POWER
III END ITEM IDENTIFICATION: 5.2-5.8 GHZ BAND POWER AMPLIFIER
INCLOSURE MATERIAL: CERAMIC AND METAL
POWER RATING PER CHARACTERISTIC: 25.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
2N3323
TRANSISTOR
NSN, MFG P/N
5961015389887
NSN
5961-01-538-9887
MFG
GPD OPTOELECTRONICS CORP.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER AND 10.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 100.00 MICROAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN AND 100.00
III END ITEM IDENTIFICATION: 5840-00-458-9195 AN/FPS85 RADAR SET
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: CAGE CODE 53399 IS THE ONLY KNOWN SOURCE FOR 2N3323,MEETING THE ELECTRICAL REQUIREMENTS OF THE NEXT HIGHER ASSEMBLY/END ITEM
TERMINAL CIRCLE DIAMETER: 0.016 INCHES MINIMUM AND 0.019 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 35.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE SHORT-CIRCUITEDTO EMITTER AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
~1: MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
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NTE5814HC
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015390282
NSN
5961-01-539-0282
MFG
NINNEMANN INC HENRY INC DIV OF NINNEMANN HENRY R INC TRUCK AND TRUCK EQUIPMENT
Description
CAPACITANCE RATING IN PICOFARADS: 280.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 0.30 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE OR 0.80 AMPERES NOMINAL FORWARD CURRENT, AVERAGE AND 60.00 AMPERES NOMINAL PEAK NONREPETITIVE SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES NOMINAL
OVERALL LENGTH: 2.350 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: LEAD SULFIDE
SPECIAL FEATURES: 10 AMP, DIFFUSED JUNCTION, HIGH CURRENT CAPABILITY AND LOW FORWARD VOLTAGE DROP, SURGE OVERLOAD RATING TO 600A PEAK, LOW REVERSE LEAKAGE CURRENT
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.00 MAXIMUM REVERSE VOLTAGE, DC AND 400.00 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 400.00 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
1N5711W
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015390852
NSN
5961-01-539-0852
MFG
DIODES INC
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 333.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MMBT3906
TRANSISTOR
NSN, MFG P/N
5961015390863
NSN
5961-01-539-0863
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
NDS7002A
TRANSISTOR
NSN, MFG P/N
5961015390864
NSN
5961-01-539-0864
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 280.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
B340A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015391729
NSN
5961-01-539-1729
MFG
DIODES INC
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
T5961-0105-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015391729
NSN
5961-01-539-1729
T5961-0105-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015391729
NSN
5961-01-539-1729
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
1N3903
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015391977
NSN
5961-01-539-1977
1N3903
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015391977
NSN
5961-01-539-1977
MFG
GENERAL SEMICONDUCTOR INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 6.00 MICROAMPERES REVERSE CURRENT, PEAK
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 FORWARD VOLTAGE, AVERAGE
III END ITEM IDENTIFICATION: NSN 2350-01-506-0132; ARMORED RECONNAISSANCE-ARIBORNE ASSUALT VEHICLE
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 0.669 INCHES MINIMUM AND 0.688 INCHES MAXIMUM
OVERALL LENGTH: 1.172 INCHES MINIMUM AND 1.453 INCHES MAXIMUM
SPECIAL FEATURES: STANDARD POLARITY: STUD IS CATHODE; 1/4-28 UNF 3A THREADS
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD
Related Searches:
SMBJ30A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015393053
NSN
5961-01-539-3053
MFG
GENERAL SEMICONDUCTOR INC
Description
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSIENT VOLTAGE SUPPRESSOR
Related Searches:
63A157257P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015393116
NSN
5961-01-539-3116
63A157257P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015393116
NSN
5961-01-539-3116
MFG
BOEING COMPANY THE DBA BOEING
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
DL4007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015393116
NSN
5961-01-539-3116
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
761670-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015393978
NSN
5961-01-539-3978
MFG
MARATHON ELECTRIC MANUFACTURING CORPORATION
Description
III END ITEM IDENTIFICATION: 6230-01-530-8890
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SUPPRESSOR, MARATHON 6KW MLT
Related Searches:
1N5523B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015395165
NSN
5961-01-539-5165
MFG
MICROSEMI CORPORATION
Description
III END ITEM IDENTIFICATION: C-17 AIRCRAFT
Related Searches:
T5961-0059-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015395165
NSN
5961-01-539-5165
T5961-0059-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015395165
NSN
5961-01-539-5165
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
III END ITEM IDENTIFICATION: C-17 AIRCRAFT
Related Searches:
1N5530B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015395166
NSN
5961-01-539-5166
MFG
MICROSEMI CORPORATION
Description
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
Related Searches:
T5961-0059-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015395166
NSN
5961-01-539-5166
T5961-0059-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015395166
NSN
5961-01-539-5166
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
Related Searches:
1N6316US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015395167
NSN
5961-01-539-5167
MFG
MICROSEMI CORPORATION
Description
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
Related Searches:
T5961-0041-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015395167
NSN
5961-01-539-5167
T5961-0041-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015395167
NSN
5961-01-539-5167
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
Related Searches:
MPSU95
TRANSISTOR
NSN, MFG P/N
5961015395200
NSN
5961-01-539-5200
MFG
DIGITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6130-01-076-7362 INVERTER ASSEMBLY
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
