My Quote Request
No products added yet
5961-01-580-9110
20 Products
10501637
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015809110
NSN
5961-01-580-9110
10501637
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015809110
NSN
5961-01-580-9110
MFG
REMY INC.
Description
III END ITEM IDENTIFICATION: ARMOURED VEHICLE FOR INFANTRY COMBAT/VEHICULE BLINDE
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: 40.0 TO 200.0 DEG CELSIUS
OVERALL HEIGHT: 61.4 MILLIMETERS NOMINAL
OVERALL LENGTH: 109.2 MILLIMETERS NOMINAL
OVERALL WIDTH: 30.3 MILLIMETERS NOMINAL
PART NAME ASSIGNED BY CONTROLLING AGENCY: DWG: RECTIFIER BRIDGE ASM
SPECIAL FEATURES: P/N 10510397 POSITIVE DIODE, 3 REQUIRED (PIA); P/N 10510398 NEGATUVE DIODE, 3 REQUIRED (PIA)
TERMINAL TYPE AND QUANTITY: 3 THREADED STUD
Related Searches:
1N4740A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015803602
NSN
5961-01-580-3602
MFG
DIODES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
910108-113
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015803602
NSN
5961-01-580-3602
910108-113
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015803602
NSN
5961-01-580-3602
MFG
MOOG INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
40EPS08
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015803803
NSN
5961-01-580-3803
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
III END ITEM IDENTIFICATION: 40EPS12
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR, DEVICE, DIODE
OVERALL LENGTH: 35.1 MILLIMETERS NOMINAL
OVERALL WIDTH: 15.9 MILLIMETERS NOMINAL
SPECIAL FEATURES: THE 40EPS RECTIFIER SAFEIR SERIER HAS BEEN OPTIMIZED FOR VERY LOW FORWARD VOLTAGE DROP. RELIABLE OPERATION UP TO 150 DEGREES CELCIUS JUNCTION TEMPERATURE
Related Searches:
99215296
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015803803
NSN
5961-01-580-3803
MFG
THALES
Description
III END ITEM IDENTIFICATION: 40EPS12
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR, DEVICE, DIODE
OVERALL LENGTH: 35.1 MILLIMETERS NOMINAL
OVERALL WIDTH: 15.9 MILLIMETERS NOMINAL
SPECIAL FEATURES: THE 40EPS RECTIFIER SAFEIR SERIER HAS BEEN OPTIMIZED FOR VERY LOW FORWARD VOLTAGE DROP. RELIABLE OPERATION UP TO 150 DEGREES CELCIUS JUNCTION TEMPERATURE
Related Searches:
KSP2222A
TRANSISTOR
NSN, MFG P/N
5961015803929
NSN
5961-01-580-3929
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: NPN GENERAL PURPOSE AMPLIFIER
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
OVERALL HEIGHT: 4.58 MILLIMETERS NOMINAL
OVERALL LENGTH: 19.05 MILLIMETERS NOMINAL
OVERALL WIDTH: 3.60 MILLIMETERS NOMINAL
SPECIAL FEATURES: COLLECTOR-EMITTER VOLTAGE (VCEO) = 40V, COLLECTOR POWER DISSIPATION PC (MAX) = 625MW
Related Searches:
PSMN025-100D
TRANSISTOR
NSN, MFG P/N
5961015804459
NSN
5961-01-580-4459
MFG
PHILIPS SEMICONDUCTORS INC
Description
FEATURES PROVIDED: HIGH POWER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: N-CHANNEL TRENCHMOS SILICONMAX STANDARD LEVEL FET
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
OVERALL HEIGHT: 10.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 6.60 MILLIMETERS NOMINAL
OVERALL WIDTH: 2.30 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: FET = FIELD-EFFECT TRANSISTOR (TRENCHMOS TECHNOLOGY)
SPECIAL TEST FEATURES: HIGH OPERATING POWER, LOW CONDUCTION LOSSES, SUITABLE FOR HIGH FREQUENCY APPLICATIONS
TERMINAL LENGTH: 2.75 MILLIMETERS NOMINAL
Related Searches:
C84820-001
TRANSISTOR
NSN, MFG P/N
5961015804805
NSN
5961-01-580-4805
MFG
MOOG INC.
Description
TRANSISTOR
Related Searches:
IRFP250
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015804860
NSN
5961-01-580-4860
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
III END ITEM IDENTIFICATION: DIE FAMILY
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TECH PACKAGE
SPECIAL FEATURES: MOS HV TO247 09295SA
Related Searches:
IRF630S
TRANSISTOR
NSN, MFG P/N
5961015806129
NSN
5961-01-580-6129
MFG
PHILIPS SEMICONDUCTORS
Description
SPECIAL FEATURES: CRITICAL APPLICATION
Related Searches:
C62258-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015806135
NSN
5961-01-580-6135
C62258-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015806135
NSN
5961-01-580-6135
MFG
MOOG INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: CA70608-001 (19156), RECEIVER-TRANSMITTER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (DWG TITLE) SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPE 1N5719
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.045 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.100 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.3 WATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
JANSPD25
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015806553
NSN
5961-01-580-6553
JANSPD25
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015806553
NSN
5961-01-580-6553
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: NUCLEAR POWER PLANTS
MANUFACTURERS CODE: 81349
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANSPD25
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.060 INCHES MAXIMUM
OVERALL LENGTH: 1.144 INCHES MAXIMUM
OVERALL WIDTH: 1.144 INCHES MAXIMUM
PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
MQSPD25
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015806553
NSN
5961-01-580-6553
MQSPD25
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015806553
NSN
5961-01-580-6553
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: NUCLEAR POWER PLANTS
MANUFACTURERS CODE: 81349
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANSPD25
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.060 INCHES MAXIMUM
OVERALL LENGTH: 1.144 INCHES MAXIMUM
OVERALL WIDTH: 1.144 INCHES MAXIMUM
PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
BCP56T1G
TRANSISTOR
NSN, MFG P/N
5961015806887
NSN
5961-01-580-6887
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
III END ITEM IDENTIFICATION: VHF FM/FH; GENERAL HELLENIC STAFF
III PART NAME ASSIGNED BY CONTROLLING AGENCY: MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.060 INCHES MINIMUM AND 0.068 INCHES MAXIMUM
OVERALL LENGTH: 0.249 INCHES MINIMUM AND 0.263 INCHES MAXIMUM
OVERALL WIDTH: 0.130 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEAD(PB) FREE; NPN SILICON EPITAXIAL TRANSISTOR; 1000/TAPE AND REEL; OPERATING AND STORAGE TEMP RANGE: M65.0/P150.0 DEG C
TERMINAL LENGTH: 0.069 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
30BQ100 TR (MARKING 3J)
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015807247
NSN
5961-01-580-7247
30BQ100 TR (MARKING 3J)
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015807247
NSN
5961-01-580-7247
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SPECIAL FEATURES: SMALL FOOT PRINT, SURFACE MOUNTABLE; VERY LOW FORWARD VOLTAGE DROP; HIGH FREQUENCY OPERATION; GUARD RING FOR ENHANCED RUGGEDNESS AND LONG TERM RELIABILITY
Related Searches:
900-45022
SCR ASSEMBLY
NSN, MFG P/N
5961015807971
NSN
5961-01-580-7971
MFG
POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP
Description
SPECIAL FEATURES: SILICON CONTROLLED RECTIFIER; COMPROMISED OF SOLID STATE ELECTRONIC SWITCHES AND OTHER ASSOCIATED COMPONENTS; RATED AS 100A
Related Searches:
900-45042
SCR ASSEMBLY
NSN, MFG P/N
5961015807972
NSN
5961-01-580-7972
MFG
POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP
Description
SPECIAL FEATURES: SILICON CONTROLLED RECTIFIER; COMPRISED OF SOLID STATE ELECTRONIC SWITCHES AND OTHER ASSOCIATED COMPONENTS; RATED AS 400A/120V
Related Searches:
IRFD9210PBF
TRANSISTOR
NSN, MFG P/N
5961015808110
NSN
5961-01-580-8110
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
TRANSISTOR
Related Searches:
MJD122G
TRANSISTOR
NSN, MFG P/N
5961015808111
NSN
5961-01-580-8111
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
TRANSISTOR
Related Searches:
MMSZ4689T1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015808112
NSN
5961-01-580-8112
MMSZ4689T1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015808112
NSN
5961-01-580-8112
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
