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5962-00-459-4451

20 Products

362246-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004594451

NSN

5962-00-459-4451

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362246-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004594451

NSN

5962-00-459-4451

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HYBRID
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -0.0 TO 85.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 85.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 8 PIN
TEST DATA DOCUMENT: 49956-362246 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

SN52514J

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004592763

NSN

5962-00-459-2763

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SN52514J

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004592763

NSN

5962-00-459-2763

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 619549-1
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, DIFFERENTIAL
FEATURES PROVIDED: BURN IN AND MONOLITHIC
III OVERALL HEIGHT: 0.300 INCHES NOMINAL
III OVERALL WIDTH: 0.325 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
MANUFACTURERS CODE: 37695
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
THE MANUFACTURERS DATA:

1757-2314

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

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1757-2314

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

MFG

LOCKHEED MARTIN CORP LOCKHEED MARTIN MISSION SYSTEMS

Description

BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.800 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY CODED DECIMAL UP/DOWN
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND PRESETTABLE AND W/CLEAR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 325.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

538879-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

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538879-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.800 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY CODED DECIMAL UP/DOWN
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND PRESETTABLE AND W/CLEAR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 325.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

65-60179

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

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65-60179

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

MFG

VERNITRON CORP

Description

BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.800 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY CODED DECIMAL UP/DOWN
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND PRESETTABLE AND W/CLEAR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 325.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

7100033-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

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7100033-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

MFG

ELECTRODYNAMICS INC. DBA L-3 COMMUNICATIONS ELECTRODYNAMICS

Description

BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.800 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY CODED DECIMAL UP/DOWN
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND PRESETTABLE AND W/CLEAR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 325.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

DM7563D883

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

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DM7563D883

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.800 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY CODED DECIMAL UP/DOWN
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND PRESETTABLE AND W/CLEAR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 325.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

DM7563J883

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

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DM7563J883

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.800 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY CODED DECIMAL UP/DOWN
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND PRESETTABLE AND W/CLEAR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 325.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

MC54193BEBJ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

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MC54193BEBJ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.800 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY CODED DECIMAL UP/DOWN
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND PRESETTABLE AND W/CLEAR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 325.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

MC74193P

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

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MC74193P

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.800 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY CODED DECIMAL UP/DOWN
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND PRESETTABLE AND W/CLEAR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 325.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

S54193F883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

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S54193F883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.800 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY CODED DECIMAL UP/DOWN
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND PRESETTABLE AND W/CLEAR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 325.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SNC54193J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

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SNC54193J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.800 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY CODED DECIMAL UP/DOWN
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND PRESETTABLE AND W/CLEAR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 325.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

WC54193

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

View More Info

WC54193

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594439

NSN

5962-00-459-4439

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.800 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY CODED DECIMAL UP/DOWN
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND PRESETTABLE AND W/CLEAR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 325.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

7100029-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594440

NSN

5962-00-459-4440

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7100029-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594440

NSN

5962-00-459-4440

MFG

ELECTRODYNAMICS INC. DBA L-3 COMMUNICATIONS ELECTRODYNAMICS

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-88 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND W/TOTEM POLE OUTPUT AND DARLINGTON-CONNECTED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 62.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 10236-7100029 DRAWING
TIME RATING PER CHACTERISTIC: 13.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 13.00 NANO

C4300J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594440

NSN

5962-00-459-4440

View More Info

C4300J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594440

NSN

5962-00-459-4440

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-88 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND W/TOTEM POLE OUTPUT AND DARLINGTON-CONNECTED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 62.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 10236-7100029 DRAWING
TIME RATING PER CHACTERISTIC: 13.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 13.00 NANO

C4300W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594440

NSN

5962-00-459-4440

View More Info

C4300W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004594440

NSN

5962-00-459-4440

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-88 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND W/TOTEM POLE OUTPUT AND DARLINGTON-CONNECTED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 62.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 10236-7100029 DRAWING
TIME RATING PER CHACTERISTIC: 13.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 13.00 NANO

358614-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004594441

NSN

5962-00-459-4441

View More Info

358614-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004594441

NSN

5962-00-459-4441

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
BODY WIDTH: 0.120 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-89 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, VIDEO AND 1 AMPLIFIER, WIDEBAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -0.0 TO 100.0 DEG CELSIUS
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 10 FLAT LEADS
TEST DATA DOCUMENT: 49956-358614 SPECIFICATION
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 12.00 NANOSECONDS

93749

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004594441

NSN

5962-00-459-4441

View More Info

93749

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004594441

NSN

5962-00-459-4441

MFG

MTS MICROELECTRONICS INC DBA M T S MICRO ELECTRONICS

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
BODY WIDTH: 0.120 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-89 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, VIDEO AND 1 AMPLIFIER, WIDEBAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -0.0 TO 100.0 DEG CELSIUS
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 10 FLAT LEADS
TEST DATA DOCUMENT: 49956-358614 SPECIFICATION
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 12.00 NANOSECONDS

SN5510F

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004594441

NSN

5962-00-459-4441

View More Info

SN5510F

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004594441

NSN

5962-00-459-4441

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
BODY WIDTH: 0.120 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-89 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, VIDEO AND 1 AMPLIFIER, WIDEBAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -0.0 TO 100.0 DEG CELSIUS
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 10 FLAT LEADS
TEST DATA DOCUMENT: 49956-358614 SPECIFICATION
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 12.00 NANOSECONDS

SN8194

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004594441

NSN

5962-00-459-4441

View More Info

SN8194

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004594441

NSN

5962-00-459-4441

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
BODY WIDTH: 0.120 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-89 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, VIDEO AND 1 AMPLIFIER, WIDEBAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -0.0 TO 100.0 DEG CELSIUS
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 10 FLAT LEADS
TEST DATA DOCUMENT: 49956-358614 SPECIFICATION
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 12.00 NANOSECONDS