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5961-00-689-3439
20 Products
033299
TRANSISTOR
NSN, MFG P/N
5961006893439
NSN
5961-00-689-3439
MFG
SIMMONDS PRECISION PRODUCTS INC. DBA GOODRICH SENSORS AND INTERGRATED SYSTMES
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 89305
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 033299
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.100 INCHES NOMINAL
OVERALL LENGTH: 0.390 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: TRANSISTOR IS TO BE SUPPLIED WITH INSULATING WASHER FOR HEAT SINK; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.595 INCHES MINIMUM AND 0.655 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 80.
Related Searches:
22-819
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006891498
NSN
5961-00-689-1498
MFG
POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND REVERSE POLARITY
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.762 INCHES MINIMUM AND 1.803 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.670 INCHES MINIMUM AND 0.686 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2N3423
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961006891499
NSN
5961-00-689-1499
2N3423
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961006891499
NSN
5961-00-689-1499
MFG
BUNKER RAMO CORP AMPHENOL CONTROLS DIV
Description
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL HEIGHT: 0.260 INCHES NOMINAL
Related Searches:
65-189934-01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961006891499
NSN
5961-00-689-1499
65-189934-01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961006891499
NSN
5961-00-689-1499
MFG
LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INTEGRATED SYSTEMS & SOLUTIONS
Description
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL HEIGHT: 0.260 INCHES NOMINAL
Related Searches:
1N4334B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006891917
NSN
5961-00-689-1917
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 13.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
12660
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006891964
NSN
5961-00-689-1964
MFG
NICE CTI SYSTEMS UK LTD
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
14058-017
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006891964
NSN
5961-00-689-1964
MFG
TRANSTEL COMMUNICATIONS LTD
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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1N5349
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006891964
NSN
5961-00-689-1964
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N5349B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006891964
NSN
5961-00-689-1964
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N5349BA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006891964
NSN
5961-00-689-1964
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
348013
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006891964
NSN
5961-00-689-1964
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
353-6550-170
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006891964
NSN
5961-00-689-1964
353-6550-170
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006891964
NSN
5961-00-689-1964
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
430015
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006891964
NSN
5961-00-689-1964
MFG
SYQWEST INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
9001769
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006891964
NSN
5961-00-689-1964
MFG
TRW INC TRW ELECTRONICS AND DEFENSE SECTOR CUSTOMER SERVICE DIV
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SK3393
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006891964
NSN
5961-00-689-1964
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
C09658-0001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961006891989
NSN
5961-00-689-1989
C09658-0001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961006891989
NSN
5961-00-689-1989
MFG
ROSEMOUNT AEROSPACE INC. DBA GOODRICH SENSOR SYSTEMS DIV GOODRICH SENSOR SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 4.70 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N1774A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/168
OVERALL LENGTH: 1.308 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/168 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED
Related Searches:
JANTX2N1774
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961006891989
NSN
5961-00-689-1989
JANTX2N1774
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961006891989
NSN
5961-00-689-1989
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 4.70 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N1774A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/168
OVERALL LENGTH: 1.308 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/168 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED
Related Searches:
76S1030-000
TRANSISTOR
NSN, MFG P/N
5961006892764
NSN
5961-00-689-2764
MFG
UNISYS CORP FEDERAL SYSTEMS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MIN. VOLTAGE; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
12044-0010
TRANSISTOR
NSN, MFG P/N
5961006893439
NSN
5961-00-689-3439
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 89305
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 033299
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.100 INCHES NOMINAL
OVERALL LENGTH: 0.390 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: TRANSISTOR IS TO BE SUPPLIED WITH INSULATING WASHER FOR HEAT SINK; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.595 INCHES MINIMUM AND 0.655 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 80.
Related Searches:
2N5195
TRANSISTOR
NSN, MFG P/N
5961006893439
NSN
5961-00-689-3439
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 89305
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 033299
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.100 INCHES NOMINAL
OVERALL LENGTH: 0.390 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: TRANSISTOR IS TO BE SUPPLIED WITH INSULATING WASHER FOR HEAT SINK; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.595 INCHES MINIMUM AND 0.655 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 80.
