My Quote Request
No products added yet
5962-00-481-9365
20 Products
BL2726107
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004819365
NSN
5962-00-481-9365
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
BODY LENGTH: 1.200 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.580 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-015-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 DECODER, FOUR TO SIXTEEN LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/DECODED OUTPUT AND W/STROBE AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 270.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 36.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 33.00 NANOSECONDS MAXIMUM PR
Related Searches:
SNM5430J-00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004819346
NSN
5962-00-481-9346
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 10.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS NO
Related Searches:
UEF3330
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004819346
NSN
5962-00-481-9346
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 10.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS NO
Related Searches:
US5430H883C
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004819346
NSN
5962-00-481-9346
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 10.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS NO
Related Searches:
SN55107J00
INTEGRATED CIRCUIT
NSN, MFG P/N
5962004819349
NSN
5962-00-481-9349
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: DUAL LINE RECEIVER,CERAMIC,HERMETICALLY SEALED,0.785 IN. LG,0.280 IN. W,0.200 IN. H,14 PIN DUAL IN-LINE PKG
Related Searches:
48-038132-01
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004819362
NSN
5962-00-481-9362
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND NEGATIVE EDGE TRIGGERED AND PRESETTABLE AND SCHOTTKY AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 274.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 11.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 11.
Related Searches:
54S112DM
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004819362
NSN
5962-00-481-9362
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND NEGATIVE EDGE TRIGGERED AND PRESETTABLE AND SCHOTTKY AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 274.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 11.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 11.
Related Searches:
586-978
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004819362
NSN
5962-00-481-9362
MFG
AMPEX DATA SYSTEMS CORP COMPUTER PRODUCTS DIV
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND NEGATIVE EDGE TRIGGERED AND PRESETTABLE AND SCHOTTKY AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 274.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 11.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 11.
Related Searches:
63A133588P28P
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004819362
NSN
5962-00-481-9362
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN SIMULATION TRAINING & SUPPORT
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND NEGATIVE EDGE TRIGGERED AND PRESETTABLE AND SCHOTTKY AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 274.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 11.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 11.
Related Searches:
SN54S112J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004819362
NSN
5962-00-481-9362
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND NEGATIVE EDGE TRIGGERED AND PRESETTABLE AND SCHOTTKY AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 274.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 11.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 11.
Related Searches:
SN54S112J-00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004819362
NSN
5962-00-481-9362
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND NEGATIVE EDGE TRIGGERED AND PRESETTABLE AND SCHOTTKY AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 274.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 11.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 11.
Related Searches:
SN74S112N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004819362
NSN
5962-00-481-9362
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND NEGATIVE EDGE TRIGGERED AND PRESETTABLE AND SCHOTTKY AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 274.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 11.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 11.
Related Searches:
SN74S112N-00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004819362
NSN
5962-00-481-9362
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND NEGATIVE EDGE TRIGGERED AND PRESETTABLE AND SCHOTTKY AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 274.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 11.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 11.
Related Searches:
SN74S112NP3
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004819362
NSN
5962-00-481-9362
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND NEGATIVE EDGE TRIGGERED AND PRESETTABLE AND SCHOTTKY AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 274.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 11.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 11.
Related Searches:
480344-0000
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004819363
NSN
5962-00-481-9363
MFG
SYPRIS ELECTRONICS LLC
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 99.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 6.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 7.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH
Related Searches:
81500496
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004819363
NSN
5962-00-481-9363
MFG
ERICSSON INFORMATION SYSTEM A/S
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 99.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 6.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 7.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH
Related Searches:
C6661-3
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004819363
NSN
5962-00-481-9363
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV LOCKHEED MARTIN AERONAUTICS COMPANY
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 99.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 6.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 7.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH
Related Searches:
SN54S20J00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004819363
NSN
5962-00-481-9363
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 99.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 6.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 7.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH
Related Searches:
SN74S20J00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004819363
NSN
5962-00-481-9363
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 99.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 6.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 7.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH
Related Searches:
SN54154J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004819365
NSN
5962-00-481-9365
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
BODY LENGTH: 1.200 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.580 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-015-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 DECODER, FOUR TO SIXTEEN LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/DECODED OUTPUT AND W/STROBE AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 270.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 36.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 33.00 NANOSECONDS MAXIMUM PR
