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5962-00-760-2149

20 Products

3255393-50

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602149

NSN

5962-00-760-2149

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3255393-50

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602149

NSN

5962-00-760-2149

MFG

NAVAL SEA SYSTEMS COMMAND

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 54.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MAXIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

MC5404FBI

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007598980

NSN

5962-00-759-8980

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MC5404FBI

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007598980

NSN

5962-00-759-8980

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 6 INVERTER, DIGITAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND MEDIUM POWER AND MEDIUM SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPU

SNA5404S

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007598980

NSN

5962-00-759-8980

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SNA5404S

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007598980

NSN

5962-00-759-8980

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 6 INVERTER, DIGITAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND MEDIUM POWER AND MEDIUM SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPU

SNA5404S06

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007598980

NSN

5962-00-759-8980

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SNA5404S06

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007598980

NSN

5962-00-759-8980

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 6 INVERTER, DIGITAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND MEDIUM POWER AND MEDIUM SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPU

SNA5404W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007598980

NSN

5962-00-759-8980

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SNA5404W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007598980

NSN

5962-00-759-8980

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 6 INVERTER, DIGITAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND MEDIUM POWER AND MEDIUM SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPU

507819-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962007602130

NSN

5962-00-760-2130

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507819-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962007602130

NSN

5962-00-760-2130

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.040 INCHES NOMINAL
BODY LENGTH: 0.255 INCHES NOMINAL
BODY WIDTH: 0.145 INCHES NOMINAL
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM OUTPUT SINK
FEATURES PROVIDED: MONOLITHIC
III END ITEM IDENTIFICATION: MICROCIRCUITS,ELECTRONICS
III PRECIOUS MATERIAL: GOLD
MANUFACTURERS CODE: 96214
MFR SOURCE CONTROLLING REFERENCE: 507819-2
SPEC/STD CONTROLLING DATA:
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 WIRE LEAD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM INPUT

SN15851

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962007602130

NSN

5962-00-760-2130

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SN15851

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962007602130

NSN

5962-00-760-2130

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.040 INCHES NOMINAL
BODY LENGTH: 0.255 INCHES NOMINAL
BODY WIDTH: 0.145 INCHES NOMINAL
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM OUTPUT SINK
FEATURES PROVIDED: MONOLITHIC
III END ITEM IDENTIFICATION: MICROCIRCUITS,ELECTRONICS
III PRECIOUS MATERIAL: GOLD
MANUFACTURERS CODE: 96214
MFR SOURCE CONTROLLING REFERENCE: 507819-2
SPEC/STD CONTROLLING DATA:
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 WIRE LEAD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM INPUT

902139

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602135

NSN

5962-00-760-2135

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902139

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602135

NSN

5962-00-760-2135

MFG

MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS AEROSPACE OPNS WEST

Description

BODY HEIGHT: 0.170 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.600 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, CLOCK
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 2-PHASE
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TEST DATA DOCUMENT: 13190-902139 DRAWING
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

902139-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602135

NSN

5962-00-760-2135

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902139-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602135

NSN

5962-00-760-2135

MFG

MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS AEROSPACE OPNS WEST

Description

BODY HEIGHT: 0.170 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.600 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, CLOCK
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 2-PHASE
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TEST DATA DOCUMENT: 13190-902139 DRAWING
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

MC/MH0013G/883

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602135

NSN

5962-00-760-2135

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MC/MH0013G/883

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602135

NSN

5962-00-760-2135

MFG

INTERPOINT CORPORATION DBA CRANE ELECTRONICS-REDMOND

Description

BODY HEIGHT: 0.170 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.600 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, CLOCK
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 2-PHASE
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TEST DATA DOCUMENT: 13190-902139 DRAWING
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

MH0013G/MIL

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602135

NSN

5962-00-760-2135

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MH0013G/MIL

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602135

NSN

5962-00-760-2135

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.170 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.600 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, CLOCK
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 2-PHASE
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TEST DATA DOCUMENT: 13190-902139 DRAWING
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

NH0013

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602135

NSN

5962-00-760-2135

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NH0013

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602135

NSN

5962-00-760-2135

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.170 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.600 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, CLOCK
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 2-PHASE
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TEST DATA DOCUMENT: 13190-902139 DRAWING
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

TS-3653-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602135

NSN

5962-00-760-2135

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TS-3653-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602135

NSN

5962-00-760-2135

MFG

MICROSEMI CORP.- MASSACHUSETTS DBA MICROSEMI LAWRENCE

Description

BODY HEIGHT: 0.170 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.600 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, CLOCK
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 2-PHASE
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TEST DATA DOCUMENT: 13190-902139 DRAWING
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

481369-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962007602136

NSN

5962-00-760-2136

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481369-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962007602136

NSN

5962-00-760-2136

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLIER, FOUR QUADRANT
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 49956-481369 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -10.0 VOLTS MAXIMUM POWER SOURCE AND 10.0 VOLTS MAXIMUM POWER SOURCE

SC12015LH

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962007602136

NSN

5962-00-760-2136

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SC12015LH

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962007602136

NSN

5962-00-760-2136

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLIER, FOUR QUADRANT
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 49956-481369 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -10.0 VOLTS MAXIMUM POWER SOURCE AND 10.0 VOLTS MAXIMUM POWER SOURCE

481281-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602148

NSN

5962-00-760-2148

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481281-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602148

NSN

5962-00-760-2148

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND W/ENABLE AND NEGATIVE EDGE TRIGGERED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 49956-481281 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MAXIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER

MC2123

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602148

NSN

5962-00-760-2148

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MC2123

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602148

NSN

5962-00-760-2148

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND W/ENABLE AND NEGATIVE EDGE TRIGGERED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 49956-481281 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MAXIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER

RF120D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602148

NSN

5962-00-760-2148

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RF120D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602148

NSN

5962-00-760-2148

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND W/ENABLE AND NEGATIVE EDGE TRIGGERED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 49956-481281 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MAXIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER

SF120

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602148

NSN

5962-00-760-2148

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SF120

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602148

NSN

5962-00-760-2148

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND W/ENABLE AND NEGATIVE EDGE TRIGGERED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 49956-481281 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MAXIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER

SNF120J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602148

NSN

5962-00-760-2148

View More Info

SNF120J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962007602148

NSN

5962-00-760-2148

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND W/ENABLE AND NEGATIVE EDGE TRIGGERED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 49956-481281 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MAXIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER