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5961-01-395-1143
20 Products
Q-0393
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013951143
NSN
5961-01-395-1143
Q-0393
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013951143
NSN
5961-01-395-1143
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
048947-0001
TRANSISTOR
NSN, MFG P/N
5961013949982
NSN
5961-01-394-9982
MFG
THALES ATM INC.
Description
DESIGN CONTROL REFERENCE: 048947-0001
III END ITEM IDENTIFICATION: VOR OMNIRANGE,DISTANCE MEASURING EQUIPMENT
MANUFACTURERS CODE: 65597
THE MANUFACTURERS DATA:
Related Searches:
MRF151G
TRANSISTOR
NSN, MFG P/N
5961013949982
NSN
5961-01-394-9982
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: 048947-0001
III END ITEM IDENTIFICATION: VOR OMNIRANGE,DISTANCE MEASURING EQUIPMENT
MANUFACTURERS CODE: 65597
THE MANUFACTURERS DATA:
Related Searches:
A3110509-002
TRANSISTOR
NSN, MFG P/N
5961013950026
NSN
5961-01-395-0026
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257
MANUFACTURERS CODE: 80063
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: A3110509-002
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.933 INCHES NOMINAL
OVERALL WIDTH: 0.415 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: CONTAINS BERYLLIUM OXIDE. HANDLE AND DISPOSE IAW HAZMAT PROCEDURES.
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 80063-A3110509 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50
Related Searches:
OM1763ST
TRANSISTOR
NSN, MFG P/N
5961013950026
NSN
5961-01-395-0026
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257
MANUFACTURERS CODE: 80063
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: A3110509-002
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.933 INCHES NOMINAL
OVERALL WIDTH: 0.415 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: CONTAINS BERYLLIUM OXIDE. HANDLE AND DISPOSE IAW HAZMAT PROCEDURES.
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 80063-A3110509 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50
Related Searches:
SD10158-2
TRANSISTOR
NSN, MFG P/N
5961013950026
NSN
5961-01-395-0026
MFG
SOLITRON DEVICES INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257
MANUFACTURERS CODE: 80063
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: A3110509-002
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.933 INCHES NOMINAL
OVERALL WIDTH: 0.415 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: CONTAINS BERYLLIUM OXIDE. HANDLE AND DISPOSE IAW HAZMAT PROCEDURES.
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 80063-A3110509 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50
Related Searches:
A3110513-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013950029
NSN
5961-01-395-0029
A3110513-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013950029
NSN
5961-01-395-0029
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 80063-A3110513 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 100.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MANUFACTURERS CODE: 80063
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: A3110513-001
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.420 INCHES NOMINAL
OVERALL LENGTH: 1.130 INCHES NOMINAL
OVERALL WIDTH: 0.685 INCHES MINIMUM AND 0.705 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE. CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES.
TERMINAL TYPE AND QUANTITY: 5 UNINSULATED WIRE LEAD
Related Searches:
OM1767SCT
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013950029
NSN
5961-01-395-0029
OM1767SCT
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013950029
NSN
5961-01-395-0029
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 80063-A3110513 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 100.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MANUFACTURERS CODE: 80063
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: A3110513-001
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.420 INCHES NOMINAL
OVERALL LENGTH: 1.130 INCHES NOMINAL
OVERALL WIDTH: 0.685 INCHES MINIMUM AND 0.705 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE. CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES.
TERMINAL TYPE AND QUANTITY: 5 UNINSULATED WIRE LEAD
Related Searches:
SD10159-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013950029
NSN
5961-01-395-0029
SD10159-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013950029
NSN
5961-01-395-0029
MFG
SOLITRON DEVICES INC.
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 80063-A3110513 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 100.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MANUFACTURERS CODE: 80063
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: A3110513-001
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.420 INCHES NOMINAL
OVERALL LENGTH: 1.130 INCHES NOMINAL
OVERALL WIDTH: 0.685 INCHES MINIMUM AND 0.705 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE. CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES.
TERMINAL TYPE AND QUANTITY: 5 UNINSULATED WIRE LEAD
Related Searches:
A3110511-002
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013950030
NSN
5961-01-395-0030
A3110511-002
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013950030
NSN
5961-01-395-0030
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 80063-A3110511 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES REVERSE CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MANUFACTURERS CODE: 80063
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: A3110511-002
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.520 INCHES NOMINAL
OVERALL LENGTH: 1.120 INCHES NOMINAL
OVERALL WIDTH: 0.695 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: CONTAINS BERYLLIUM OXIDE. HANDLE AND DISPOSE IAW HAZMAT PROCEDURES.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
OM1834SC
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013950030
NSN
5961-01-395-0030
OM1834SC
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013950030
NSN
5961-01-395-0030
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 80063-A3110511 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES REVERSE CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MANUFACTURERS CODE: 80063
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: A3110511-002
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.520 INCHES NOMINAL
OVERALL LENGTH: 1.120 INCHES NOMINAL
OVERALL WIDTH: 0.695 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: CONTAINS BERYLLIUM OXIDE. HANDLE AND DISPOSE IAW HAZMAT PROCEDURES.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
SD10167-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013950030
NSN
5961-01-395-0030
SD10167-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013950030
NSN
5961-01-395-0030
MFG
SOLITRON DEVICES INC.
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 80063-A3110511 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES REVERSE CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MANUFACTURERS CODE: 80063
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: A3110511-002
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.520 INCHES NOMINAL
OVERALL LENGTH: 1.120 INCHES NOMINAL
OVERALL WIDTH: 0.695 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: CONTAINS BERYLLIUM OXIDE. HANDLE AND DISPOSE IAW HAZMAT PROCEDURES.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
A3110512-002
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013950031
NSN
5961-01-395-0031
A3110512-002
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013950031
NSN
5961-01-395-0031
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 80063-A3110512 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 60.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MANUFACTURERS CODE: 80063
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: A3110512-002
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.923 INCHES NOMINAL
OVERALL WIDTH: 0.415 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE. CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
OM1786ST
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013950031
NSN
5961-01-395-0031
OM1786ST
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013950031
NSN
5961-01-395-0031
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 80063-A3110512 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 60.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MANUFACTURERS CODE: 80063
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: A3110512-002
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.923 INCHES NOMINAL
OVERALL WIDTH: 0.415 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE. CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
SD10160-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013950031
NSN
5961-01-395-0031
SD10160-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013950031
NSN
5961-01-395-0031
MFG
SOLITRON DEVICES INC.
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 80063-A3110512 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 60.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MANUFACTURERS CODE: 80063
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: A3110512-002
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.923 INCHES NOMINAL
OVERALL WIDTH: 0.415 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE. CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
A3110534-001
TRANSISTOR
NSN, MFG P/N
5961013950034
NSN
5961-01-395-0034
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 80063
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: A3110534-001
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.933 INCHES NOMINAL
OVERALL WIDTH: 0.470 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: CONTAINS BERYLLIUM OXIDE. HANDLE AND DISPOSE IAW HAZMAT PROCEDURES.
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 80063-A3110534 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 900.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
OM1802STT
TRANSISTOR
NSN, MFG P/N
5961013950034
NSN
5961-01-395-0034
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 80063
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: A3110534-001
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.933 INCHES NOMINAL
OVERALL WIDTH: 0.470 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: CONTAINS BERYLLIUM OXIDE. HANDLE AND DISPOSE IAW HAZMAT PROCEDURES.
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 80063-A3110534 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 900.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
SD10146-1
TRANSISTOR
NSN, MFG P/N
5961013950034
NSN
5961-01-395-0034
MFG
SOLITRON DEVICES INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 80063
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: A3110534-001
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.933 INCHES NOMINAL
OVERALL WIDTH: 0.470 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: CONTAINS BERYLLIUM OXIDE. HANDLE AND DISPOSE IAW HAZMAT PROCEDURES.
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 80063-A3110534 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 900.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
A3110514-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013950037
NSN
5961-01-395-0037
A3110514-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013950037
NSN
5961-01-395-0037
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 80063
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: A3110514-001
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.018 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.030 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3110514 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
1N2439
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013950095
NSN
5961-01-395-0095
MFG
CUSTOM POWER LTD.
Description
SEMICONDUCTOR DEVICE,DIODE
