My Quote Request
5962-01-101-0252
20 Products
5962-3800404CCB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011010252
NSN
5962-01-101-0252
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00404CCB
DESIGN FUNCTION AND QUANTITY: 3 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 3 INPUT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/4
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
COM5016-5
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011009899
NSN
5962-01-100-9899
MFG
STANDARD MICROSYSTEMS CORP
Description
BODY HEIGHT: 0.090 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
BODY LENGTH: 0.885 INCHES MINIMUM AND 0.915 INCHES MAXIMUM
BODY WIDTH: 0.295 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GENERATOR, BAUD RATE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND ASYNCHRONOUS AND SYNCHRONOUS AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DMS 89073B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011009899
NSN
5962-01-100-9899
MFG
DLA LAND AND MARITIME
Description
BODY HEIGHT: 0.090 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
BODY LENGTH: 0.885 INCHES MINIMUM AND 0.915 INCHES MAXIMUM
BODY WIDTH: 0.295 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GENERATOR, BAUD RATE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND ASYNCHRONOUS AND SYNCHRONOUS AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
LM320KC12
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011010236
NSN
5962-01-101-0236
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
BODY LENGTH: 1.573 INCHES MAXIMUM
BODY WIDTH: 1.050 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-3 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND FIXED AND THERMAL OVERLOAD PROTECTION
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 4.0 WATTS
OPERATING TEMP RANGE: 0.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 35.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
848LM3-29
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011010237
NSN
5962-01-101-0237
MFG
AMETEK PROGRAMMABLE POWER INC.
Description
BODY LENGTH: 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY WIDTH: 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-92 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: PLASTIC
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
LM329CZ
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011010237
NSN
5962-01-101-0237
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY LENGTH: 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY WIDTH: 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-92 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: PLASTIC
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
LM340ACK-15
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011010239
NSN
5962-01-101-0239
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.450 INCHES MAXIMUM
BODY LENGTH: 1.573 INCHES MAXIMUM
BODY WIDTH: 1.050 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-3 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/CURRENT LIMITER AND THERMAL OVERLOAD PROTECTION AND W/SHORT CIRCUIT PROTECTION
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 20.0 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
LM340AKC15
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011010239
NSN
5962-01-101-0239
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.450 INCHES MAXIMUM
BODY LENGTH: 1.573 INCHES MAXIMUM
BODY WIDTH: 1.050 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-3 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/CURRENT LIMITER AND THERMAL OVERLOAD PROTECTION AND W/SHORT CIRCUIT PROTECTION
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 20.0 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
NE556A
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011010242
NSN
5962-01-101-0242
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.765 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
MC3011P
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011010243
NSN
5962-01-101-0243
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.740 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 4 INPUT
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
Related Searches:
5962-3800902CEB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011010245
NSN
5962-01-101-0245
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 5
BODY LENGTH: 0.875 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00902CEB
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 400.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/9
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
5962-3800902CEX
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011010245
NSN
5962-01-101-0245
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 5
BODY LENGTH: 0.875 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00902CEB
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 400.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/9
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
M38510/00902CEB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011010245
NSN
5962-01-101-0245
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 5
BODY LENGTH: 0.875 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00902CEB
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 400.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/9
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
AM686HC
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011010248
NSN
5962-01-101-0248
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
BODY LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/ENABLE
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -7.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5962-3800103CCB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011010250
NSN
5962-01-101-0250
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00103CCB
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 3 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
5962-3800103CCX
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011010250
NSN
5962-01-101-0250
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00103CCB
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 3 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
M38510/00103CCB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011010250
NSN
5962-01-101-0250
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00103CCB
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 3 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
5962-3800104CCB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011010251
NSN
5962-01-101-0251
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00104CCB
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
5962-3800104CCX
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011010251
NSN
5962-01-101-0251
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00104CCB
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
M38510/00104CCB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011010251
NSN
5962-01-101-0251
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00104CCB
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS