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5962-01-110-2925
20 Products
80784-2
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011102925
NSN
5962-01-110-2925
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 COMPARATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND LOW VOLTAGE AND HIGH RELIABILITY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER OR TIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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1826-0373
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011102868
NSN
5962-01-110-2868
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.405 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 TIMER, LINEAR
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
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LM555CN
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011102868
NSN
5962-01-110-2868
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.405 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 TIMER, LINEAR
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
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SL32763
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011102868
NSN
5962-01-110-2868
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.405 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 TIMER, LINEAR
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
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1826-0051
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011102870
NSN
5962-01-110-2870
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.715 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE, DIFFERENTIAL
FEATURES PROVIDED: MONOLITHIC AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 625.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011102870
NSN
5962-01-110-2870
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.715 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE, DIFFERENTIAL
FEATURES PROVIDED: MONOLITHIC AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 625.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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SC17038P
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011102870
NSN
5962-01-110-2870
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.715 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE, DIFFERENTIAL
FEATURES PROVIDED: MONOLITHIC AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 625.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011102870
NSN
5962-01-110-2870
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.715 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE, DIFFERENTIAL
FEATURES PROVIDED: MONOLITHIC AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 625.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011102870
NSN
5962-01-110-2870
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.715 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE, DIFFERENTIAL
FEATURES PROVIDED: MONOLITHIC AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 625.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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1820-1287
MICROCIRCUIT
NSN, MFG P/N
5962011102873
NSN
5962-01-110-2873
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
MICROCIRCUIT
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MICROCIRCUIT
NSN, MFG P/N
5962011102873
NSN
5962-01-110-2873
MFG
FREESCALE SEMICONDUCTOR INC.
Description
MICROCIRCUIT
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MICROCIRCUIT
NSN, MFG P/N
5962011102873
NSN
5962-01-110-2873
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
MICROCIRCUIT
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1820-0990
MICROCIRCUIT
NSN, MFG P/N
5962011102883
NSN
5962-01-110-2883
MFG
HEWLETT PACKARD CO
Description
MICROCIRCUIT
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1820-1244
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011102886
NSN
5962-01-110-2886
MFG
HEWLETT PACKARD CO
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.780 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER, FOUR TO ONE LINE
FEATURES PROVIDED: W/ENABLE AND W/STROBE AND LOW IMPEDANCE AND HIGH FAN-OUT AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 31.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 38.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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74LS153N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011102886
NSN
5962-01-110-2886
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.780 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER, FOUR TO ONE LINE
FEATURES PROVIDED: W/ENABLE AND W/STROBE AND LOW IMPEDANCE AND HIGH FAN-OUT AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 31.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 38.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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NSN, MFG P/N
5962011102886
NSN
5962-01-110-2886
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.780 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER, FOUR TO ONE LINE
FEATURES PROVIDED: W/ENABLE AND W/STROBE AND LOW IMPEDANCE AND HIGH FAN-OUT AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 31.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 38.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011102886
NSN
5962-01-110-2886
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.780 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER, FOUR TO ONE LINE
FEATURES PROVIDED: W/ENABLE AND W/STROBE AND LOW IMPEDANCE AND HIGH FAN-OUT AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 31.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 38.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011102886
NSN
5962-01-110-2886
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.780 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER, FOUR TO ONE LINE
FEATURES PROVIDED: W/ENABLE AND W/STROBE AND LOW IMPEDANCE AND HIGH FAN-OUT AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 31.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 38.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011102886
NSN
5962-01-110-2886
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.780 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER, FOUR TO ONE LINE
FEATURES PROVIDED: W/ENABLE AND W/STROBE AND LOW IMPEDANCE AND HIGH FAN-OUT AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 31.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 38.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011102886
NSN
5962-01-110-2886
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.780 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER, FOUR TO ONE LINE
FEATURES PROVIDED: W/ENABLE AND W/STROBE AND LOW IMPEDANCE AND HIGH FAN-OUT AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 31.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 38.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
