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5962-01-123-4003
20 Products
0N197108-502
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011234003
NSN
5962-01-123-4003
MFG
NATIONAL SECURITY AGENCY
Description
BODY LENGTH: 1.060 INCHES NOMINAL
INCLOSURE MATERIAL: METAL AND OXIDE
OPERATING TEMP RANGE: -25.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIRECT-COUPLED-TRANSISTOR LOGIC
Related Searches:
0N230291-502
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011234004
NSN
5962-01-123-4004
MFG
NATIONAL SECURITY AGENCY
Description
BODY LENGTH: 1.060 INCHES NOMINAL
INCLOSURE MATERIAL: METAL AND OXIDE
OPERATING TEMP RANGE: -25.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIRECT-COUPLED-TRANSISTOR LOGIC
Related Searches:
CD4019BE
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011234005
NSN
5962-01-123-4005
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.135 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AC JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, AND-OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MEDIUM SPEED AND MONOLITHIC
III END ITEM IDENTIFICATION: 5895-01-103-0657 28687
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION
Related Searches:
CD4019BEA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011234005
NSN
5962-01-123-4005
MFG
ADELCO ELEKTRONIK GMBH
Description
BODY HEIGHT: 0.135 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AC JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, AND-OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MEDIUM SPEED AND MONOLITHIC
III END ITEM IDENTIFICATION: 5895-01-103-0657 28687
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION
Related Searches:
11113-002
MICROCIRCUIT,HYBRID
NSN, MFG P/N
5962011234314
NSN
5962-01-123-4314
MFG
INTERPOINT CORPORATION DBA CRANE ELECTRONICS-REDMOND
Description
MICROCIRCUIT,HYBRID
Related Searches:
2375017-501
MICROCIRCUIT,HYBRID
NSN, MFG P/N
5962011234314
NSN
5962-01-123-4314
MFG
LOCKHEED MARTIN CANADA INC
Description
MICROCIRCUIT,HYBRID
Related Searches:
2387158-1
MICROCIRCUIT,HYBRID
NSN, MFG P/N
5962011234314
NSN
5962-01-123-4314
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN SIMULATION TRAINING & SUPPORT
Description
MICROCIRCUIT,HYBRID
Related Searches:
SM-C-854988
MICROCIRCUIT,HYBRID
NSN, MFG P/N
5962011234314
NSN
5962-01-123-4314
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
MICROCIRCUIT,HYBRID
Related Searches:
TS-3308
MICROCIRCUIT,HYBRID
NSN, MFG P/N
5962011234314
NSN
5962-01-123-4314
MFG
MICROSEMI CORP.- MASSACHUSETTS DBA MICROSEMI LAWRENCE
Description
MICROCIRCUIT,HYBRID
Related Searches:
932701-1B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011234331
NSN
5962-01-123-4331
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/COMMON CLOCK
III END ITEM IDENTIFICATION: RADAR 76301
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 105.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932701 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
HL65164
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011234331
NSN
5962-01-123-4331
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/COMMON CLOCK
III END ITEM IDENTIFICATION: RADAR 76301
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 105.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932701 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/06103BFA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011234331
NSN
5962-01-123-4331
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/COMMON CLOCK
III END ITEM IDENTIFICATION: RADAR 76301
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 105.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932701 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SC62604FH1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011234331
NSN
5962-01-123-4331
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/COMMON CLOCK
III END ITEM IDENTIFICATION: RADAR 76301
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 105.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932701 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
17994
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234332
NSN
5962-01-123-4332
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS
Related Searches:
27S33
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234332
NSN
5962-01-123-4332
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS
Related Searches:
5353-1F
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234332
NSN
5962-01-123-4332
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS
Related Searches:
53S441-F
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234332
NSN
5962-01-123-4332
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS
Related Searches:
932883-11
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234332
NSN
5962-01-123-4332
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS
Related Searches:
93453
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234332
NSN
5962-01-123-4332
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS
Related Searches:
B1614-1B
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234332
NSN
5962-01-123-4332
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS
