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5961-01-427-7960

20 Products

1853-0516

TRANSISTOR

NSN, MFG P/N

5961014277960

NSN

5961-01-427-7960

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1853-0516

TRANSISTOR

NSN, MFG P/N

5961014277960

NSN

5961-01-427-7960

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: SEAWOLF CLASS SSN; TICONDEROGA CLASS CG (47); NIMITZ CLASS CVN; ARLEIGH BURKE CLASS DDG; FORRESTAL CLASS CV; OLIVER PERRY CLASS FFG; KIDD CLASS DDG; SPRUANCE CLASS DD (963); LOS ANGELES CLASS SSN (688)
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL

MMBTH81

TRANSISTOR

NSN, MFG P/N

5961014277960

NSN

5961-01-427-7960

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MMBTH81

TRANSISTOR

NSN, MFG P/N

5961014277960

NSN

5961-01-427-7960

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: SEAWOLF CLASS SSN; TICONDEROGA CLASS CG (47); NIMITZ CLASS CVN; ARLEIGH BURKE CLASS DDG; FORRESTAL CLASS CV; OLIVER PERRY CLASS FFG; KIDD CLASS DDG; SPRUANCE CLASS DD (963); LOS ANGELES CLASS SSN (688)
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL

1128SAV51116-11

TRANSISTOR

NSN, MFG P/N

5961014278465

NSN

5961-01-427-8465

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1128SAV51116-11

TRANSISTOR

NSN, MFG P/N

5961014278465

NSN

5961-01-427-8465

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS

UHR0114

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014278468

NSN

5961-01-427-8468

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UHR0114

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014278468

NSN

5961-01-427-8468

MFG

LINK-BELT CONSTRUCTION EQUIPMENT COMPANY L.P. LLLP

2N4338-2

TRANSISTOR

NSN, MFG P/N

5961014278555

NSN

5961-01-427-8555

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2N4338-2

TRANSISTOR

NSN, MFG P/N

5961014278555

NSN

5961-01-427-8555

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN

T235A443-1

TRANSISTOR

NSN, MFG P/N

5961014278555

NSN

5961-01-427-8555

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T235A443-1

TRANSISTOR

NSN, MFG P/N

5961014278555

NSN

5961-01-427-8555

MFG

TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION

Description

SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN

312A5925P1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014278604

NSN

5961-01-427-8604

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312A5925P1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014278604

NSN

5961-01-427-8604

MFG

BAE SYSTEMS CONTROLS INC.

DZ981025B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014278604

NSN

5961-01-427-8604

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DZ981025B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014278604

NSN

5961-01-427-8604

MFG

MICROSEMI CORP-COLORADO

GZ95017D

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014278604

NSN

5961-01-427-8604

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GZ95017D

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014278604

NSN

5961-01-427-8604

MFG

PROTEK DEVICES LP DBA PROTEK DEVICES

8734371

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014278807

NSN

5961-01-427-8807

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8734371

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014278807

NSN

5961-01-427-8807

MFG

SACRAMENTO AIR LOGISTICS CENTER SM-ALC/LIIL

Description

OVERALL HEIGHT: 2.040 INCHES NOMINAL
OVERALL LENGTH: 4.530 INCHES NOMINAL
OVERALL WIDTH: 1.970 INCHES NOMINAL

ED431625

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014278807

NSN

5961-01-427-8807

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ED431625

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014278807

NSN

5961-01-427-8807

MFG

POWEREX INC

Description

OVERALL HEIGHT: 2.040 INCHES NOMINAL
OVERALL LENGTH: 4.530 INCHES NOMINAL
OVERALL WIDTH: 1.970 INCHES NOMINAL

IRKT250-16

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014278807

NSN

5961-01-427-8807

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IRKT250-16

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014278807

NSN

5961-01-427-8807

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

OVERALL HEIGHT: 2.040 INCHES NOMINAL
OVERALL LENGTH: 4.530 INCHES NOMINAL
OVERALL WIDTH: 1.970 INCHES NOMINAL

VSKT250-16

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014278807

NSN

5961-01-427-8807

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VSKT250-16

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014278807

NSN

5961-01-427-8807

MFG

VISHAY INTERTECHNOLOGY INC.

Description

OVERALL HEIGHT: 2.040 INCHES NOMINAL
OVERALL LENGTH: 4.530 INCHES NOMINAL
OVERALL WIDTH: 1.970 INCHES NOMINAL

1799475-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014279045

NSN

5961-01-427-9045

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1799475-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014279045

NSN

5961-01-427-9045

MFG

RAYTHEON COMPANY

Description

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.320 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 96214-1799475 MANUFACTURERS SPECIFICATION
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 96214-2698276 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.5 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR

MHQ2369

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014279045

NSN

5961-01-427-9045

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MHQ2369

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014279045

NSN

5961-01-427-9045

MFG

FREESCALE SEMICONDUCTOR INC.

Description

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.320 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 96214-1799475 MANUFACTURERS SPECIFICATION
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 96214-2698276 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.5 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR

NSQ1008

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014279045

NSN

5961-01-427-9045

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NSQ1008

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014279045

NSN

5961-01-427-9045

MFG

MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION

Description

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.320 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 96214-1799475 MANUFACTURERS SPECIFICATION
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 96214-2698276 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.5 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR

382079-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014279108

NSN

5961-01-427-9108

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382079-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014279108

NSN

5961-01-427-9108

MFG

RAYTHEON COMPANY DBA RAYTHEON

381616-1

TRANSISTOR

NSN, MFG P/N

5961014279124

NSN

5961-01-427-9124

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381616-1

TRANSISTOR

NSN, MFG P/N

5961014279124

NSN

5961-01-427-9124

MFG

RAYTHEON COMPANY DBA RAYTHEON

MRF158

TRANSISTOR

NSN, MFG P/N

5961014279124

NSN

5961-01-427-9124

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MRF158

TRANSISTOR

NSN, MFG P/N

5961014279124

NSN

5961-01-427-9124

MFG

FREESCALE SEMICONDUCTOR INC.

4000-02189-01

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014279134

NSN

5961-01-427-9134

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4000-02189-01

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014279134

NSN

5961-01-427-9134

MFG

THE BOEING COMPANY DBA BOEING DIV DEFENSE SPACE & SECURITY

Description

III END ITEM IDENTIFICATION: E-3 ESM GRP B E/I FSCM 32562
MATERIAL: COPPER