My Quote Request
5961-01-427-7960
20 Products
1853-0516
TRANSISTOR
NSN, MFG P/N
5961014277960
NSN
5961-01-427-7960
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: SEAWOLF CLASS SSN; TICONDEROGA CLASS CG (47); NIMITZ CLASS CVN; ARLEIGH BURKE CLASS DDG; FORRESTAL CLASS CV; OLIVER PERRY CLASS FFG; KIDD CLASS DDG; SPRUANCE CLASS DD (963); LOS ANGELES CLASS SSN (688)
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
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MMBTH81
TRANSISTOR
NSN, MFG P/N
5961014277960
NSN
5961-01-427-7960
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: SEAWOLF CLASS SSN; TICONDEROGA CLASS CG (47); NIMITZ CLASS CVN; ARLEIGH BURKE CLASS DDG; FORRESTAL CLASS CV; OLIVER PERRY CLASS FFG; KIDD CLASS DDG; SPRUANCE CLASS DD (963); LOS ANGELES CLASS SSN (688)
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
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1128SAV51116-11
TRANSISTOR
NSN, MFG P/N
5961014278465
NSN
5961-01-427-8465
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
TRANSISTOR
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UHR0114
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014278468
NSN
5961-01-427-8468
MFG
LINK-BELT CONSTRUCTION EQUIPMENT COMPANY L.P. LLLP
Description
SEMICONDUCTOR DEVICE,DIODE
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2N4338-2
TRANSISTOR
NSN, MFG P/N
5961014278555
NSN
5961-01-427-8555
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
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T235A443-1
TRANSISTOR
NSN, MFG P/N
5961014278555
NSN
5961-01-427-8555
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014278604
NSN
5961-01-427-8604
312A5925P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014278604
NSN
5961-01-427-8604
MFG
BAE SYSTEMS CONTROLS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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DZ981025B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014278604
NSN
5961-01-427-8604
MFG
MICROSEMI CORP-COLORADO
Description
SEMICONDUCTOR DEVICE,DIODE
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GZ95017D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014278604
NSN
5961-01-427-8604
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PROTEK DEVICES LP DBA PROTEK DEVICES
Description
SEMICONDUCTOR DEVICE,DIODE
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8734371
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014278807
NSN
5961-01-427-8807
8734371
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014278807
NSN
5961-01-427-8807
MFG
SACRAMENTO AIR LOGISTICS CENTER SM-ALC/LIIL
Description
OVERALL HEIGHT: 2.040 INCHES NOMINAL
OVERALL LENGTH: 4.530 INCHES NOMINAL
OVERALL WIDTH: 1.970 INCHES NOMINAL
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ED431625
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014278807
NSN
5961-01-427-8807
ED431625
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014278807
NSN
5961-01-427-8807
MFG
POWEREX INC
Description
OVERALL HEIGHT: 2.040 INCHES NOMINAL
OVERALL LENGTH: 4.530 INCHES NOMINAL
OVERALL WIDTH: 1.970 INCHES NOMINAL
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IRKT250-16
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014278807
NSN
5961-01-427-8807
IRKT250-16
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014278807
NSN
5961-01-427-8807
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
OVERALL HEIGHT: 2.040 INCHES NOMINAL
OVERALL LENGTH: 4.530 INCHES NOMINAL
OVERALL WIDTH: 1.970 INCHES NOMINAL
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VSKT250-16
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014278807
NSN
5961-01-427-8807
VSKT250-16
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014278807
NSN
5961-01-427-8807
MFG
VISHAY INTERTECHNOLOGY INC.
Description
OVERALL HEIGHT: 2.040 INCHES NOMINAL
OVERALL LENGTH: 4.530 INCHES NOMINAL
OVERALL WIDTH: 1.970 INCHES NOMINAL
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1799475-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014279045
NSN
5961-01-427-9045
1799475-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014279045
NSN
5961-01-427-9045
MFG
RAYTHEON COMPANY
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.320 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 96214-1799475 MANUFACTURERS SPECIFICATION
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 96214-2698276 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.5 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
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MHQ2369
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014279045
NSN
5961-01-427-9045
MHQ2369
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014279045
NSN
5961-01-427-9045
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.320 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 96214-1799475 MANUFACTURERS SPECIFICATION
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 96214-2698276 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.5 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
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NSN, MFG P/N
5961014279045
NSN
5961-01-427-9045
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014279045
NSN
5961-01-427-9045
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.320 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 96214-1799475 MANUFACTURERS SPECIFICATION
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 96214-2698276 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.5 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
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382079-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014279108
NSN
5961-01-427-9108
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
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381616-1
TRANSISTOR
NSN, MFG P/N
5961014279124
NSN
5961-01-427-9124
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
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MRF158
TRANSISTOR
NSN, MFG P/N
5961014279124
NSN
5961-01-427-9124
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
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4000-02189-01
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014279134
NSN
5961-01-427-9134
4000-02189-01
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014279134
NSN
5961-01-427-9134
MFG
THE BOEING COMPANY DBA BOEING DIV DEFENSE SPACE & SECURITY
Description
III END ITEM IDENTIFICATION: E-3 ESM GRP B E/I FSCM 32562
MATERIAL: COPPER