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5962-01-236-6884

20 Products

42630

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012366884

NSN

5962-01-236-6884

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42630

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012366884

NSN

5962-01-236-6884

MFG

RAYTHEON COMPANY DBA RAYTHEON

G286699-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366880

NSN

5962-01-236-6880

View More Info

G286699-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366880

NSN

5962-01-236-6880

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.540 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

G311485-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366880

NSN

5962-01-236-6880

View More Info

G311485-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366880

NSN

5962-01-236-6880

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.540 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

PRG311485-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366880

NSN

5962-01-236-6880

View More Info

PRG311485-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366880

NSN

5962-01-236-6880

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.540 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366880

NSN

5962-01-236-6880

View More Info

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366880

NSN

5962-01-236-6880

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.540 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

AM27S43DMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366881

NSN

5962-01-236-6881

View More Info

AM27S43DMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366881

NSN

5962-01-236-6881

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.540 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

G286699-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366881

NSN

5962-01-236-6881

View More Info

G286699-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366881

NSN

5962-01-236-6881

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.540 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

G311486-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366881

NSN

5962-01-236-6881

View More Info

G311486-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366881

NSN

5962-01-236-6881

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.540 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

PRG311486-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366881

NSN

5962-01-236-6881

View More Info

PRG311486-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366881

NSN

5962-01-236-6881

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.540 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366881

NSN

5962-01-236-6881

View More Info

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366881

NSN

5962-01-236-6881

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.540 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

AM27S43DMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366882

NSN

5962-01-236-6882

View More Info

AM27S43DMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366882

NSN

5962-01-236-6882

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.230 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.510 INCHES MINIMUM AND 0.540 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND BIPOLAR AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM INPUT

G286699-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366882

NSN

5962-01-236-6882

View More Info

G286699-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366882

NSN

5962-01-236-6882

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.230 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.510 INCHES MINIMUM AND 0.540 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND BIPOLAR AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM INPUT

G311487-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366882

NSN

5962-01-236-6882

View More Info

G311487-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366882

NSN

5962-01-236-6882

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.230 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.510 INCHES MINIMUM AND 0.540 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND BIPOLAR AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM INPUT

PRG311487-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366882

NSN

5962-01-236-6882

View More Info

PRG311487-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366882

NSN

5962-01-236-6882

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.230 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.510 INCHES MINIMUM AND 0.540 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND BIPOLAR AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM INPUT

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366882

NSN

5962-01-236-6882

View More Info

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366882

NSN

5962-01-236-6882

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.230 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.510 INCHES MINIMUM AND 0.540 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND BIPOLAR AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM INPUT

AM27S43DMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366883

NSN

5962-01-236-6883

View More Info

AM27S43DMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366883

NSN

5962-01-236-6883

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.230 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.510 INCHES MINIMUM AND 0.540 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND SCHOTTKY AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

G286699-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366883

NSN

5962-01-236-6883

View More Info

G286699-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366883

NSN

5962-01-236-6883

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.230 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.510 INCHES MINIMUM AND 0.540 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND SCHOTTKY AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

G311488-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366883

NSN

5962-01-236-6883

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G311488-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366883

NSN

5962-01-236-6883

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.230 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.510 INCHES MINIMUM AND 0.540 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND SCHOTTKY AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

PRG311488-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366883

NSN

5962-01-236-6883

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PRG311488-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366883

NSN

5962-01-236-6883

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.230 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.510 INCHES MINIMUM AND 0.540 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND SCHOTTKY AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366883

NSN

5962-01-236-6883

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012366883

NSN

5962-01-236-6883

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.230 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.510 INCHES MINIMUM AND 0.540 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND SCHOTTKY AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE