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5962-01-267-9761
20 Products
2698329-2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012679761
NSN
5962-01-267-9761
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND BURN IN AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC OR METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
2698329-3
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012679761
NSN
5962-01-267-9761
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND BURN IN AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC OR METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
2892990-58
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012679761
NSN
5962-01-267-9761
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND BURN IN AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC OR METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
2892990-8
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012679761
NSN
5962-01-267-9761
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND BURN IN AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC OR METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
507987
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012679761
NSN
5962-01-267-9761
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND BURN IN AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC OR METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012679761
NSN
5962-01-267-9761
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND BURN IN AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC OR METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
7143635-02
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012679763
NSN
5962-01-267-9763
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
7323281-00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012679763
NSN
5962-01-267-9763
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
7323287-00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012679763
NSN
5962-01-267-9763
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
7915935-04
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012679763
NSN
5962-01-267-9763
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
BD322436-006
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012679763
NSN
5962-01-267-9763
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
M38510/50403BRA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012679763
NSN
5962-01-267-9763
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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PL7143635-02
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012679763
NSN
5962-01-267-9763
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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ROM/PROM FAMILY 047
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012679763
NSN
5962-01-267-9763
ROM/PROM FAMILY 047
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012679763
NSN
5962-01-267-9763
MFG
DLA LAND AND MARITIME
Description
BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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7143688-02
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012679766
NSN
5962-01-267-9766
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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7323646-02
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012679766
NSN
5962-01-267-9766
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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7323660-02
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012679766
NSN
5962-01-267-9766
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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BD322436-016
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012679766
NSN
5962-01-267-9766
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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M38510/50302BRA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012679766
NSN
5962-01-267-9766
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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PL7143688-02
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012679766
NSN
5962-01-267-9766
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
