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5962-01-267-9766

20 Products

7143688-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679766

NSN

5962-01-267-9766

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7143688-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679766

NSN

5962-01-267-9766

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

2698329-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012679761

NSN

5962-01-267-9761

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2698329-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012679761

NSN

5962-01-267-9761

MFG

RAYTHEON COMPANY

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND BURN IN AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC OR METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY

2698329-3

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012679761

NSN

5962-01-267-9761

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2698329-3

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012679761

NSN

5962-01-267-9761

MFG

RAYTHEON COMPANY

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND BURN IN AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC OR METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY

2892990-58

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012679761

NSN

5962-01-267-9761

View More Info

2892990-58

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012679761

NSN

5962-01-267-9761

MFG

RAYTHEON COMPANY

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND BURN IN AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC OR METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY

2892990-8

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012679761

NSN

5962-01-267-9761

View More Info

2892990-8

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012679761

NSN

5962-01-267-9761

MFG

RAYTHEON COMPANY

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND BURN IN AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC OR METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY

507987

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012679761

NSN

5962-01-267-9761

View More Info

507987

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012679761

NSN

5962-01-267-9761

MFG

RAYTHEON COMPANY

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND BURN IN AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC OR METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012679761

NSN

5962-01-267-9761

View More Info

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012679761

NSN

5962-01-267-9761

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND BURN IN AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC OR METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY

7143635-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679763

NSN

5962-01-267-9763

View More Info

7143635-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679763

NSN

5962-01-267-9763

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

7323281-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679763

NSN

5962-01-267-9763

View More Info

7323281-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679763

NSN

5962-01-267-9763

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

7323287-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679763

NSN

5962-01-267-9763

View More Info

7323287-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679763

NSN

5962-01-267-9763

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

7915935-04

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679763

NSN

5962-01-267-9763

View More Info

7915935-04

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679763

NSN

5962-01-267-9763

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

BD322436-006

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679763

NSN

5962-01-267-9763

View More Info

BD322436-006

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679763

NSN

5962-01-267-9763

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

M38510/50403BRA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679763

NSN

5962-01-267-9763

View More Info

M38510/50403BRA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679763

NSN

5962-01-267-9763

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

PL7143635-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679763

NSN

5962-01-267-9763

View More Info

PL7143635-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679763

NSN

5962-01-267-9763

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

ROM/PROM FAMILY 047

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679763

NSN

5962-01-267-9763

View More Info

ROM/PROM FAMILY 047

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679763

NSN

5962-01-267-9763

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

7323646-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679766

NSN

5962-01-267-9766

View More Info

7323646-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679766

NSN

5962-01-267-9766

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

7323660-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679766

NSN

5962-01-267-9766

View More Info

7323660-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679766

NSN

5962-01-267-9766

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

BD322436-016

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679766

NSN

5962-01-267-9766

View More Info

BD322436-016

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679766

NSN

5962-01-267-9766

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

M38510/50302BRA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679766

NSN

5962-01-267-9766

View More Info

M38510/50302BRA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679766

NSN

5962-01-267-9766

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

PL7143688-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679766

NSN

5962-01-267-9766

View More Info

PL7143688-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012679766

NSN

5962-01-267-9766

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT