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5961-00-586-7005

20 Products

720699-028

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005867005

NSN

5961-00-586-7005

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720699-028

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005867005

NSN

5961-00-586-7005

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.400 INCHES MAXIMUM
OVERALL LENGTH: 0.900 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

SW120-151

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005866984

NSN

5961-00-586-6984

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SW120-151

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005866984

NSN

5961-00-586-6984

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

NONDEFINITIVE SPEC/STD DATA: 1N253 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG

1N430

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005866985

NSN

5961-00-586-6985

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1N430

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005866985

NSN

5961-00-586-6985

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.625 INCHES
OVERALL DIAMETER: 0.635 INCHES MAXIMUM
OVERALL LENGTH: 0.769 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.780 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1554 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.4 MAXIMUM NOMINAL REGULATOR VOLTAGE

4178595-011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005866985

NSN

5961-00-586-6985

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4178595-011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005866985

NSN

5961-00-586-6985

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.625 INCHES
OVERALL DIAMETER: 0.635 INCHES MAXIMUM
OVERALL LENGTH: 0.769 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.780 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1554 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.4 MAXIMUM NOMINAL REGULATOR VOLTAGE

8904809

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005866985

NSN

5961-00-586-6985

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8904809

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005866985

NSN

5961-00-586-6985

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.625 INCHES
OVERALL DIAMETER: 0.635 INCHES MAXIMUM
OVERALL LENGTH: 0.769 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.780 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1554 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.4 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N441

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005867005

NSN

5961-00-586-7005

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1N441

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005867005

NSN

5961-00-586-7005

MFG

GENERAL INSTRUMENT CORP COMPUTER PRODUCTS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.400 INCHES MAXIMUM
OVERALL LENGTH: 0.900 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

66-0412

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005867005

NSN

5961-00-586-7005

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66-0412

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005867005

NSN

5961-00-586-7005

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.400 INCHES MAXIMUM
OVERALL LENGTH: 0.900 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

720699-25

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005867081

NSN

5961-00-586-7081

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720699-25

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005867081

NSN

5961-00-586-7081

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

DESIGN CONTROL REFERENCE: HD2130
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 82577
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

HD2130

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005867081

NSN

5961-00-586-7081

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HD2130

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005867081

NSN

5961-00-586-7081

MFG

RAYTHEON COMPANY

Description

DESIGN CONTROL REFERENCE: HD2130
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 82577
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

2864759

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961005870163

NSN

5961-00-587-0163

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2864759

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961005870163

NSN

5961-00-587-0163

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REVERSE VOLTAGE, INSTANTANEOUS
DESIGN CONTROL REFERENCE: 2864759
MANUFACTURERS CODE: 10001
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.770 INCHES MAXIMUM
THE MANUFACTURERS DATA:

1N3065

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005874712

NSN

5961-00-587-4712

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1N3065

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005874712

NSN

5961-00-587-4712

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 0.10 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3453 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N3065A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005874712

NSN

5961-00-587-4712

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1N3065A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005874712

NSN

5961-00-587-4712

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 0.10 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3453 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK

604442-1

TRANSISTOR

NSN, MFG P/N

5961005874786

NSN

5961-00-587-4786

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604442-1

TRANSISTOR

NSN, MFG P/N

5961005874786

NSN

5961-00-587-4786

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

DESIGN CONTROL REFERENCE: 604442-1
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 06481
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

EX62-60C

HOLDER,SEMICONDUCTO

NSN, MFG P/N

5961005877024

NSN

5961-00-587-7024

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EX62-60C

HOLDER,SEMICONDUCTO

NSN, MFG P/N

5961005877024

NSN

5961-00-587-7024

MFG

AUGAT INC

2106500

MOUNTING KIT,TRANSI

NSN, MFG P/N

5961005879711

NSN

5961-00-587-9711

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2106500

MOUNTING KIT,TRANSI

NSN, MFG P/N

5961005879711

NSN

5961-00-587-9711

MFG

SOLITRON DEVICES INC.

649A800H01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005885796

NSN

5961-00-588-5796

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649A800H01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005885796

NSN

5961-00-588-5796

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

DESIGN CONTROL REFERENCE: 649A800H01
III END ITEM IDENTIFICATION: AN/TPS-43E
MANUFACTURERS CODE: 97942
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 2.750 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

CX976

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005885796

NSN

5961-00-588-5796

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CX976

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005885796

NSN

5961-00-588-5796

MFG

MICRO USPD INC

Description

DESIGN CONTROL REFERENCE: 649A800H01
III END ITEM IDENTIFICATION: AN/TPS-43E
MANUFACTURERS CODE: 97942
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 2.750 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

SA4049

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005885796

NSN

5961-00-588-5796

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SA4049

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005885796

NSN

5961-00-588-5796

MFG

SEMTECH CORPORATION

Description

DESIGN CONTROL REFERENCE: 649A800H01
III END ITEM IDENTIFICATION: AN/TPS-43E
MANUFACTURERS CODE: 97942
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 2.750 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

649A800H02

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005885797

NSN

5961-00-588-5797

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649A800H02

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005885797

NSN

5961-00-588-5797

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

III END ITEM IDENTIFICATION: AN/TPS-43E/TPS-75
INCLOSURE MATERIAL: CERAMIC OR METAL OR PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 2.750 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15000.0 MAXIMUM REVERSE VOLTAGE, PEAK

CX977

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005885797

NSN

5961-00-588-5797

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CX977

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005885797

NSN

5961-00-588-5797

MFG

MICRO USPD INC

Description

III END ITEM IDENTIFICATION: AN/TPS-43E/TPS-75
INCLOSURE MATERIAL: CERAMIC OR METAL OR PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 2.750 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15000.0 MAXIMUM REVERSE VOLTAGE, PEAK