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5961-00-770-6295

20 Products

69-0075

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007706295

NSN

5961-00-770-6295

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69-0075

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007706295

NSN

5961-00-770-6295

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.390 INCHES MAXIMUM
OVERALL LENGTH: 0.287 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.9 MAXIMUM FORWARD VOLTAGE, DC

44C255634-202

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007704738

NSN

5961-00-770-4738

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44C255634-202

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007704738

NSN

5961-00-770-4738

MFG

GENERAL ELECTRIC CO

Description

DESIGN CONTROL REFERENCE: 4JA11CX108
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 09214
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

4JA11CX108

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007704738

NSN

5961-00-770-4738

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4JA11CX108

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007704738

NSN

5961-00-770-4738

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN

Description

DESIGN CONTROL REFERENCE: 4JA11CX108
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 09214
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

1N1817R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007705198

NSN

5961-00-770-5198

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1N1817R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007705198

NSN

5961-00-770-5198

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.375 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.434 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2469 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

8836415

TRANSISTOR

NSN, MFG P/N

5961007706296

NSN

5961-00-770-6296

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8836415

TRANSISTOR

NSN, MFG P/N

5961007706296

NSN

5961-00-770-6296

MFG

PICATINNY ARSENAL

Description

FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.907 INCHES MAXIMUM
OVERALL LENGTH: 0.532 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.088 INCHES MAXIMUM
TERMINAL LENGTH: 0.375 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 WIRE HOOK

GA52830

TRANSISTOR

NSN, MFG P/N

5961007706296

NSN

5961-00-770-6296

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GA52830

TRANSISTOR

NSN, MFG P/N

5961007706296

NSN

5961-00-770-6296

MFG

AMERICAN TELEPHONE AND TELEGRAPH CO

Description

FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.907 INCHES MAXIMUM
OVERALL LENGTH: 0.532 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.088 INCHES MAXIMUM
TERMINAL LENGTH: 0.375 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 WIRE HOOK

900232

TRANSISTOR

NSN, MFG P/N

5961007706329

NSN

5961-00-770-6329

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900232

TRANSISTOR

NSN, MFG P/N

5961007706329

NSN

5961-00-770-6329

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

DESIGN CONTROL REFERENCE: 900232
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 37695
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

H5K1P6Q

TRANSISTOR

NSN, MFG P/N

5961007706329

NSN

5961-00-770-6329

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H5K1P6Q

TRANSISTOR

NSN, MFG P/N

5961007706329

NSN

5961-00-770-6329

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS

Description

DESIGN CONTROL REFERENCE: 900232
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 37695
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

114Z0331-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007707236

NSN

5961-00-770-7236

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114Z0331-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007707236

NSN

5961-00-770-7236

MFG

NORTHROP GRUMMAN CORPORATION DBA INTEGRATED SYSTEMS SECTOR DIV INTEGRATED SYSTEMS SECTOR

Description

FEATURES PROVIDED: MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL

328C094

TRANSISTOR

NSN, MFG P/N

5961007708425

NSN

5961-00-770-8425

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328C094

TRANSISTOR

NSN, MFG P/N

5961007708425

NSN

5961-00-770-8425

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

DESIGN CONTROL REFERENCE: J334
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 01295
OVERALL DIAMETER: 0.350 INCHES NOMINAL
OVERALL LENGTH: 0.245 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

J334

TRANSISTOR

NSN, MFG P/N

5961007708425

NSN

5961-00-770-8425

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J334

TRANSISTOR

NSN, MFG P/N

5961007708425

NSN

5961-00-770-8425

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

DESIGN CONTROL REFERENCE: J334
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 01295
OVERALL DIAMETER: 0.350 INCHES NOMINAL
OVERALL LENGTH: 0.245 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

9056390

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007709122

NSN

5961-00-770-9122

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9056390

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007709122

NSN

5961-00-770-9122

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

INPUT TERMINAL TYPE: SCREWCAP
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 3.125 INCHES NOMINAL
OVERALL WIDTH: 0.875 INCHES NOMINAL

99240-163

TRANSISTOR

NSN, MFG P/N

5961007712130

NSN

5961-00-771-2130

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99240-163

TRANSISTOR

NSN, MFG P/N

5961007712130

NSN

5961-00-771-2130

MFG

L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATION SYSTEMS - EAST DIVISION

Description

DESIGN CONTROL REFERENCE: 99240-163
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 11447
OVERALL WIDTH: 1.020 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
THE MANUFACTURERS DATA:

1804557-14

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007712152

NSN

5961-00-771-2152

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1804557-14

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007712152

NSN

5961-00-771-2152

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

5260-1085-6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007712152

NSN

5961-00-771-2152

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5260-1085-6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007712152

NSN

5961-00-771-2152

MFG

RECON/OPTICAL INC .

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

UT264

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007712152

NSN

5961-00-771-2152

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UT264

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007712152

NSN

5961-00-771-2152

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

048716-0001

TRANSISTOR

NSN, MFG P/N

5961007712156

NSN

5961-00-771-2156

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048716-0001

TRANSISTOR

NSN, MFG P/N

5961007712156

NSN

5961-00-771-2156

MFG

THALES ATM INC.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3967 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

2N2498

TRANSISTOR

NSN, MFG P/N

5961007712156

NSN

5961-00-771-2156

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2N2498

TRANSISTOR

NSN, MFG P/N

5961007712156

NSN

5961-00-771-2156

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3967 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

2N2498A

TRANSISTOR

NSN, MFG P/N

5961007712156

NSN

5961-00-771-2156

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2N2498A

TRANSISTOR

NSN, MFG P/N

5961007712156

NSN

5961-00-771-2156

MFG

ADELCO ELEKTRONIK GMBH

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3967 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

173688

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007712820

NSN

5961-00-771-2820

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173688

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007712820

NSN

5961-00-771-2820

MFG

BAE SYSTEMS LAND & ARMAMENTS L.P. D IV ARMAMENT SYSTEMS

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
DESIGN CONTROL REFERENCE: 173688
MANUFACTURERS CODE: 44114
SPECIAL FEATURES: PACIFIC SEMICONDUCTORS,INC. CONTROLLING AGENCY; COMPONENT TYPE NO. 1N39838
THE MANUFACTURERS DATA: