My Quote Request
No products added yet
5961-00-187-9783
20 Products
314377
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001879783
NSN
5961-00-187-9783
314377
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001879783
NSN
5961-00-187-9783
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 98453-314377 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 BREAKDOWN VOLTAGE, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.220 INCHES MAXIMUM
OVERALL LENGTH: 1.030 INCHES MAXIMUM
OVERALL WIDTH: 0.460 INCHES MAXIMUM
Related Searches:
SS1379H1
TRANSISTOR
NSN, MFG P/N
5961001879691
NSN
5961-00-187-9691
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: -200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 928139-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: 82577
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.110 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -15.0 MAXIMUM COLLECTOR TO BASE VOLT
Related Searches:
653-024-9114
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001879729
NSN
5961-00-187-9729
653-024-9114
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001879729
NSN
5961-00-187-9729
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL DIAMETER: 0.187 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.187 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TURRET
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
UZ7724
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001879729
NSN
5961-00-187-9729
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL DIAMETER: 0.187 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.187 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TURRET
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
655-028-4
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001879742
NSN
5961-00-187-9742
655-028-4
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001879742
NSN
5961-00-187-9742
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.503 INCHES MAXIMUM
OVERALL LENGTH: 2.249 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
Related Searches:
S3BR8F
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001879756
NSN
5961-00-187-9756
S3BR8F
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001879756
NSN
5961-00-187-9756
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
SPECIAL FEATURES: SILICON,3 PHASE FULL WAVE BRIDGE,800V PEAK INVERSE VOLTAGE,2 AMP AVERAGE RECITIFED CURRENT AT 55 DEG C AND 1.2 AMP AT 100 DEG C,MAX REVERSE CURRENT AT PEAK INVERSE VOLTAGE IS 3 UA AT 25 DEG C AND 60 UA AT 100 DEG C,RECURRENT SURGE AT 25 DEG C IS 10
~1: AMP,FAST REVERSE RECOVERY TIME,M55.0 TO P150.0 DEG C OPERATING TEMP,5 SOLID SILVER LEADS,DIM. OF LEADS 0.031 IN. DIA,0.875 IN. MIN LG;MOLDED CASE IS 1.000 IN. LG;0.420 IN. W;0.180 IN. H
Related Searches:
701-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001879783
NSN
5961-00-187-9783
701-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001879783
NSN
5961-00-187-9783
MFG
MICRO USPD INC
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 98453-314377 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 BREAKDOWN VOLTAGE, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.220 INCHES MAXIMUM
OVERALL LENGTH: 1.030 INCHES MAXIMUM
OVERALL WIDTH: 0.460 INCHES MAXIMUM
Related Searches:
S3BR2F
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001879783
NSN
5961-00-187-9783
S3BR2F
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001879783
NSN
5961-00-187-9783
MFG
SEMTECH CORPORATION
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 98453-314377 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 BREAKDOWN VOLTAGE, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.220 INCHES MAXIMUM
OVERALL LENGTH: 1.030 INCHES MAXIMUM
OVERALL WIDTH: 0.460 INCHES MAXIMUM
Related Searches:
1N4706
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001881442
NSN
5961-00-188-1442
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2N4038
TRANSISTOR
NSN, MFG P/N
5961001881463
NSN
5961-00-188-1463
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
44792-501
TRANSISTOR
NSN, MFG P/N
5961001882910
NSN
5961-00-188-2910
MFG
HAMILTON STANDARD ELECTRONICS SYSTEMS INC TELE-DYNAMICS DIV
Description
FEATURES PROVIDED: W/HEAT SINK
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
Related Searches:
159-507-2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001883036
NSN
5961-00-188-3036
159-507-2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001883036
NSN
5961-00-188-3036
MFG
ASCO SERVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 0.390 INCHES MAXIMUM
OVERALL WIDTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
C106F1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001883036
NSN
5961-00-188-3036
C106F1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001883036
NSN
5961-00-188-3036
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 0.390 INCHES MAXIMUM
OVERALL WIDTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
JHP132-031-5
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001883036
NSN
5961-00-188-3036
JHP132-031-5
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001883036
NSN
5961-00-188-3036
MFG
HOLLINGSWORTH JOHN R CO
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 0.390 INCHES MAXIMUM
OVERALL WIDTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
2N4393
TRANSISTOR
NSN, MFG P/N
5961001883227
NSN
5961-00-188-3227
MFG
CRYSTALONICS INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 89944
MFR SOURCE CONTROLLING REFERENCE: 68413016603
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
2N4393A
TRANSISTOR
NSN, MFG P/N
5961001883227
NSN
5961-00-188-3227
MFG
ADELCO ELEKTRONIK GMBH
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 89944
MFR SOURCE CONTROLLING REFERENCE: 68413016603
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
68413016603
TRANSISTOR
NSN, MFG P/N
5961001883227
NSN
5961-00-188-3227
MFG
KOLLSMAN INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 89944
MFR SOURCE CONTROLLING REFERENCE: 68413016603
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
019-004466
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001883240
NSN
5961-00-188-3240
019-004466
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001883240
NSN
5961-00-188-3240
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
CURRENT RATING PER CHARACTERISTIC: 0.60 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT AND 7.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: LEADS SILVER
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 440.0 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
UZ1625
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001883240
NSN
5961-00-188-3240
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.60 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT AND 7.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: LEADS SILVER
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 440.0 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
352-0494-001
TRANSISTOR
NSN, MFG P/N
5961001883991
NSN
5961-00-188-3991
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
