My Quote Request
5961-00-963-0143
20 Products
1N1633
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009630143
NSN
5961-00-963-0143
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SELENIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE2283 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
ST8047
TRANSISTOR
NSN, MFG P/N
5961009625213
NSN
5961-00-962-5213
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
10630233-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009625260
NSN
5961-00-962-5260
10630233-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009625260
NSN
5961-00-962-5260
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.359 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 18.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N1202
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009625260
NSN
5961-00-962-5260
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.359 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 18.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
4JA25BX20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009625260
NSN
5961-00-962-5260
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.359 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 18.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
66-6826
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009625260
NSN
5961-00-962-5260
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.359 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 18.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
GS61606
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009625385
NSN
5961-00-962-5385
GS61606
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009625385
NSN
5961-00-962-5385
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.635 INCHES MAXIMUM
OVERALL WIDTH: 0.480 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
SMD376365
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009625385
NSN
5961-00-962-5385
SMD376365
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009625385
NSN
5961-00-962-5385
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.635 INCHES MAXIMUM
OVERALL WIDTH: 0.480 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
10607937-1
TRANSISTOR
NSN, MFG P/N
5961009628107
NSN
5961-00-962-8107
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: -50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND -2.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
MD90
TRANSISTOR
NSN, MFG P/N
5961009628107
NSN
5961-00-962-8107
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
CURRENT RATING PER CHARACTERISTIC: -50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND -2.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
1N3026B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009628184
NSN
5961-00-962-8184
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
EA10
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009630141
NSN
5961-00-963-0141
MFG
CAPITOL RECORDS INC CAPITOL MAGNETIC PRODUCTS DIV
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: RETAINING CLIP
MATERIAL: PLASTIC AND COPPER ALLOY
SURFACE TREATMENT: NICKEL
UNTHREADED MOUNTING HOLE DIAMETER: 0.125 INCHES NOMINAL SINGLE MOUNTING FACILITY
Related Searches:
7U1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009630143
NSN
5961-00-963-0143
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SELENIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE2283 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1N2631
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009630150
NSN
5961-00-963-0150
1N2631
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009630150
NSN
5961-00-963-0150
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
MATERIAL: SILICON
OVERALL DIAMETER: 1.250 INCHES NOMINAL
OVERALL LENGTH: 2.650 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; ENCLOSED METAL CASE; 1130 VOLTS RMS AND600 MILLIAMPS DC; 75 DET CELSIUS TEMP RATING
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, FEMALE
Related Searches:
S5251
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009630150
NSN
5961-00-963-0150
MFG
ST-SEMICON INC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
MATERIAL: SILICON
OVERALL DIAMETER: 1.250 INCHES NOMINAL
OVERALL LENGTH: 2.650 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; ENCLOSED METAL CASE; 1130 VOLTS RMS AND600 MILLIAMPS DC; 75 DET CELSIUS TEMP RATING
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, FEMALE
Related Searches:
11155236
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961009631583
NSN
5961-00-963-1583
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
INCLOSURE MATERIAL: GLASS
OVERALL LENGTH: 0.500 INCHES NOMINAL
Related Searches:
CL603AL
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961009631583
NSN
5961-00-963-1583
MFG
CLAIREX ELECTRONICS DIV OF CLAIREX CORP
Description
INCLOSURE MATERIAL: GLASS
OVERALL LENGTH: 0.500 INCHES NOMINAL
Related Searches:
19A115527P1
TRANSISTOR
NSN, MFG P/N
5961009634987
NSN
5961-00-963-4987
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: MODELS HB,HN SERIES
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 29.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO BAS
Related Searches:
36453
TRANSISTOR
NSN, MFG P/N
5961009634987
NSN
5961-00-963-4987
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: MODELS HB,HN SERIES
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 29.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO BAS
Related Searches:
19A115342P1
TRANSISTOR
NSN, MFG P/N
5961009634989
NSN
5961-00-963-4989
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: MODELS HB,HN SERIES
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN