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5961-00-963-0143

20 Products

1N1633

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009630143

NSN

5961-00-963-0143

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1N1633

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009630143

NSN

5961-00-963-0143

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SELENIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE2283 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

ST8047

TRANSISTOR

NSN, MFG P/N

5961009625213

NSN

5961-00-962-5213

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ST8047

TRANSISTOR

NSN, MFG P/N

5961009625213

NSN

5961-00-962-5213

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

10630233-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009625260

NSN

5961-00-962-5260

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10630233-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009625260

NSN

5961-00-962-5260

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.359 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 18.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N1202

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009625260

NSN

5961-00-962-5260

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1N1202

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009625260

NSN

5961-00-962-5260

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.359 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 18.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

4JA25BX20

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009625260

NSN

5961-00-962-5260

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4JA25BX20

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009625260

NSN

5961-00-962-5260

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.359 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 18.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

66-6826

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009625260

NSN

5961-00-962-5260

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66-6826

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009625260

NSN

5961-00-962-5260

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.359 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 18.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

GS61606

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009625385

NSN

5961-00-962-5385

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GS61606

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009625385

NSN

5961-00-962-5385

MFG

LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP

Description

COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.635 INCHES MAXIMUM
OVERALL WIDTH: 0.480 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

SMD376365

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009625385

NSN

5961-00-962-5385

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SMD376365

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009625385

NSN

5961-00-962-5385

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.635 INCHES MAXIMUM
OVERALL WIDTH: 0.480 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

10607937-1

TRANSISTOR

NSN, MFG P/N

5961009628107

NSN

5961-00-962-8107

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10607937-1

TRANSISTOR

NSN, MFG P/N

5961009628107

NSN

5961-00-962-8107

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: -50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND -2.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

MD90

TRANSISTOR

NSN, MFG P/N

5961009628107

NSN

5961-00-962-8107

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MD90

TRANSISTOR

NSN, MFG P/N

5961009628107

NSN

5961-00-962-8107

MFG

SPRAGUE ELECTRIC CO WORLD HQS

Description

CURRENT RATING PER CHARACTERISTIC: -50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND -2.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

1N3026B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009628184

NSN

5961-00-962-8184

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1N3026B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009628184

NSN

5961-00-962-8184

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

EA10

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009630141

NSN

5961-00-963-0141

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EA10

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009630141

NSN

5961-00-963-0141

MFG

CAPITOL RECORDS INC CAPITOL MAGNETIC PRODUCTS DIV

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: RETAINING CLIP
MATERIAL: PLASTIC AND COPPER ALLOY
SURFACE TREATMENT: NICKEL
UNTHREADED MOUNTING HOLE DIAMETER: 0.125 INCHES NOMINAL SINGLE MOUNTING FACILITY

7U1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009630143

NSN

5961-00-963-0143

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7U1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009630143

NSN

5961-00-963-0143

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SELENIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE2283 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N2631

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009630150

NSN

5961-00-963-0150

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1N2631

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009630150

NSN

5961-00-963-0150

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
MATERIAL: SILICON
OVERALL DIAMETER: 1.250 INCHES NOMINAL
OVERALL LENGTH: 2.650 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; ENCLOSED METAL CASE; 1130 VOLTS RMS AND600 MILLIAMPS DC; 75 DET CELSIUS TEMP RATING
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, FEMALE

S5251

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009630150

NSN

5961-00-963-0150

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S5251

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009630150

NSN

5961-00-963-0150

MFG

ST-SEMICON INC

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
MATERIAL: SILICON
OVERALL DIAMETER: 1.250 INCHES NOMINAL
OVERALL LENGTH: 2.650 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; ENCLOSED METAL CASE; 1130 VOLTS RMS AND600 MILLIAMPS DC; 75 DET CELSIUS TEMP RATING
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, FEMALE

11155236

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961009631583

NSN

5961-00-963-1583

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11155236

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961009631583

NSN

5961-00-963-1583

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

INCLOSURE MATERIAL: GLASS
OVERALL LENGTH: 0.500 INCHES NOMINAL

CL603AL

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961009631583

NSN

5961-00-963-1583

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CL603AL

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961009631583

NSN

5961-00-963-1583

MFG

CLAIREX ELECTRONICS DIV OF CLAIREX CORP

Description

INCLOSURE MATERIAL: GLASS
OVERALL LENGTH: 0.500 INCHES NOMINAL

19A115527P1

TRANSISTOR

NSN, MFG P/N

5961009634987

NSN

5961-00-963-4987

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19A115527P1

TRANSISTOR

NSN, MFG P/N

5961009634987

NSN

5961-00-963-4987

MFG

GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: MODELS HB,HN SERIES
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 29.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO BAS

36453

TRANSISTOR

NSN, MFG P/N

5961009634987

NSN

5961-00-963-4987

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36453

TRANSISTOR

NSN, MFG P/N

5961009634987

NSN

5961-00-963-4987

MFG

INTERSIL CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: MODELS HB,HN SERIES
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 29.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO BAS

19A115342P1

TRANSISTOR

NSN, MFG P/N

5961009634989

NSN

5961-00-963-4989

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19A115342P1

TRANSISTOR

NSN, MFG P/N

5961009634989

NSN

5961-00-963-4989

MFG

GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: MODELS HB,HN SERIES
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN