My Quote Request
No products added yet
5961-00-409-5497
20 Products
2N4220
TRANSISTOR
NSN, MFG P/N
5961004095497
NSN
5961-00-409-5497
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 15.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
657990
TRANSISTOR
NSN, MFG P/N
5961004093638
NSN
5961-00-409-3638
MFG
L-3 COMMUNICATIONS CORPORATION DIV LINK SIMULATION & TRAINING DIVISION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
1902-3279
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004095047
NSN
5961-00-409-5047
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 3.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: OLIVER PERRY CLASS FFG, NIMITZ CLASS CVN, TARAWA CLASS LHA, FORRESTAL CLASS CV, WASP CLASS LHD, TICONDEROGA CLASS CG (47), VIRGINIA CLASS CGN (41), KIDD CLASS DDG, SPRUANCE CLASS DD (963). B-52 AIRCRAFT SUPPORT EQUIPMENT.
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
DZ770412C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004095047
NSN
5961-00-409-5047
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 3.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: OLIVER PERRY CLASS FFG, NIMITZ CLASS CVN, TARAWA CLASS LHA, FORRESTAL CLASS CV, WASP CLASS LHD, TICONDEROGA CLASS CG (47), VIRGINIA CLASS CGN (41), KIDD CLASS DDG, SPRUANCE CLASS DD (963). B-52 AIRCRAFT SUPPORT EQUIPMENT.
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
FZ7304
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004095047
NSN
5961-00-409-5047
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 3.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: OLIVER PERRY CLASS FFG, NIMITZ CLASS CVN, TARAWA CLASS LHA, FORRESTAL CLASS CV, WASP CLASS LHD, TICONDEROGA CLASS CG (47), VIRGINIA CLASS CGN (41), KIDD CLASS DDG, SPRUANCE CLASS DD (963). B-52 AIRCRAFT SUPPORT EQUIPMENT.
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SZ30016-314
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004095047
NSN
5961-00-409-5047
SZ30016-314
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004095047
NSN
5961-00-409-5047
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 3.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: OLIVER PERRY CLASS FFG, NIMITZ CLASS CVN, TARAWA CLASS LHA, FORRESTAL CLASS CV, WASP CLASS LHD, TICONDEROGA CLASS CG (47), VIRGINIA CLASS CGN (41), KIDD CLASS DDG, SPRUANCE CLASS DD (963). B-52 AIRCRAFT SUPPORT EQUIPMENT.
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
11731
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004095048
NSN
5961-00-409-5048
MFG
DATRON THE INSTRUMENTS INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
374-11731
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004095048
NSN
5961-00-409-5048
MFG
WAVETEK U S INC DIV OF WAVETEK CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
158-132-0002
TRANSISTOR
NSN, MFG P/N
5961004095071
NSN
5961-00-409-5071
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS
Description
TRANSISTOR
Related Searches:
2N4407
TRANSISTOR
NSN, MFG P/N
5961004095071
NSN
5961-00-409-5071
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
TRANSISTOR
Related Searches:
472-0546-018
TRANSISTOR
NSN, MFG P/N
5961004095089
NSN
5961-00-409-5089
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN CONTROL REFERENCE: 472-0546-018
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94756
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.069 INCHES NOMINAL
OVERALL LENGTH: 0.357 INCHES NOMINAL
OVERALL WIDTH: 0.254 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DESIGN ANALYSIS; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1901-0537
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004095104
NSN
5961-00-409-5104
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
DESIGN CONTROL REFERENCE: NV244
MANUFACTURERS CODE: 03877
OVERALL DIAMETER: 0.110 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
NV244
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004095104
NSN
5961-00-409-5104
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
DESIGN CONTROL REFERENCE: NV244
MANUFACTURERS CODE: 03877
OVERALL DIAMETER: 0.110 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
618613-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004095494
NSN
5961-00-409-5494
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.275 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
FD07145
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004095494
NSN
5961-00-409-5494
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.275 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
0804666
TRANSISTOR
NSN, MFG P/N
5961004095495
NSN
5961-00-409-5495
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.297 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
108AJJ103
TRANSISTOR
NSN, MFG P/N
5961004095495
NSN
5961-00-409-5495
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.297 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N4299
TRANSISTOR
NSN, MFG P/N
5961004095495
NSN
5961-00-409-5495
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.297 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
619134-3
TRANSISTOR
NSN, MFG P/N
5961004095495
NSN
5961-00-409-5495
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.297 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
SES-209
TRANSISTOR
NSN, MFG P/N
5961004095495
NSN
5961-00-409-5495
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.297 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
