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5961-01-324-5887
20 Products
STX36-1
TRANSISTOR
NSN, MFG P/N
5961013245887
NSN
5961-01-324-5887
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 10.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND BURN IN AND ELECTROSTATIC SENSITIVE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: 5805-01-188-3993 CENTRAL OFFICE,TELEPHONE,AUTOMATIC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.580 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 170.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 90.0 MINIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MINIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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107906-002
TRANSISTOR
NSN, MFG P/N
5961013245888
NSN
5961-01-324-5888
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV CUSTOMER SERVICES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MINIMUM DRAIN CURRENT
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 5805-01-188-3993 CENTRAL OFFICE,TELEPHONE,AUTOMATIC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -160.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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H-00194-2
TRANSISTOR
NSN, MFG P/N
5961013245888
NSN
5961-01-324-5888
MFG
SUPERTEX INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MINIMUM DRAIN CURRENT
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 5805-01-188-3993 CENTRAL OFFICE,TELEPHONE,AUTOMATIC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -160.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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1135661G1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013245892
NSN
5961-01-324-5892
MFG
ITT INDUSTRIES INC ITT AEROSPACE COMMUNICATIONS DIV EAST
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND BURN IN
III END ITEM IDENTIFICATION: 5805-01-188-3993 CENTRAL OFFICE,TELEPHONE,AUTOMATIC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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DKV-6520-54
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013245892
NSN
5961-01-324-5892
DKV-6520-54
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013245892
NSN
5961-01-324-5892
MFG
SKYWORKS SOLUTIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND BURN IN
III END ITEM IDENTIFICATION: 5805-01-188-3993 CENTRAL OFFICE,TELEPHONE,AUTOMATIC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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C50M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013245894
NSN
5961-01-324-5894
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-94
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 2.577 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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C50MX500
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013245894
NSN
5961-01-324-5894
C50MX500
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013245894
NSN
5961-01-324-5894
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-94
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 2.577 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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80-00063-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013245896
NSN
5961-01-324-5896
80-00063-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013245896
NSN
5961-01-324-5896
MFG
GENERAL DYNAMICS OTS AEROSPACE INC. DBA GENERAL DYNAMICS OTS SEATTLE DIV SEATTLE OPERATIONS
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE AND BURN IN
III END ITEM IDENTIFICATION: 5805-01-188-3993 CENTRAL OFFICE,TELEPHONE,AUTOMATIC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.580 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
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SUES2606CT
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013245896
NSN
5961-01-324-5896
SUES2606CT
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013245896
NSN
5961-01-324-5896
MFG
SEMICON COMPONENTS INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE AND BURN IN
III END ITEM IDENTIFICATION: 5805-01-188-3993 CENTRAL OFFICE,TELEPHONE,AUTOMATIC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.580 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
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UES2606
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013245896
NSN
5961-01-324-5896
UES2606
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013245896
NSN
5961-01-324-5896
MFG
MICRO USPD INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE AND BURN IN
III END ITEM IDENTIFICATION: 5805-01-188-3993 CENTRAL OFFICE,TELEPHONE,AUTOMATIC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.580 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
1135588G1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013245897
NSN
5961-01-324-5897
1135588G1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013245897
NSN
5961-01-324-5897
MFG
ITT INDUSTRIES INC ITT AEROSPACE COMMUNICATIONS DIV EAST
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
FSA2509M
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013245897
NSN
5961-01-324-5897
FSA2509M
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013245897
NSN
5961-01-324-5897
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
782477-1
TRANSISTOR
NSN, MFG P/N
5961013245978
NSN
5961-01-324-5978
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
TRANSISTOR
Related Searches:
SDR605S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013246582
NSN
5961-01-324-6582
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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7872
EYE,MISPRINT
NSN, MFG P/N
5961013246836
NSN
5961-01-324-6836
MFG
DE LA RUE GIORI S.A.
Description
EYE,MISPRINT
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2N4406
TRANSISTOR
NSN, MFG P/N
5961013247537
NSN
5961-01-324-7537
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES NOMINAL COLLECTOR CURRENT, INSTANTANEOUS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39(TO-205AD
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 80.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 NOMINAL EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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TRANSISTOR
NSN, MFG P/N
5961013247538
NSN
5961-01-324-7538
MFG
STMICROELECTRONICS INC
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-126
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 45.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE
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GD 2403C
TRANSISTOR
NSN, MFG P/N
5961013247539
NSN
5961-01-324-7539
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - DENMARK NAVY
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K38
TRANSISTOR
NSN, MFG P/N
5961013247540
NSN
5961-01-324-7540
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - DENMARK NAVY
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SRF 2394
TRANSISTOR
NSN, MFG P/N
5961013247541
NSN
5961-01-324-7541
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - DENMARK NAVY
