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5961-01-283-2600
20 Products
8C128
TRANSISTOR
NSN, MFG P/N
5961012832600
NSN
5961-01-283-2600
MFG
NEXTIRAONE SOLUTIONS LLC
Description
TRANSISTOR
Related Searches:
JAN1N6170A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012829861
NSN
5961-01-282-9861
JAN1N6170A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012829861
NSN
5961-01-282-9861
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 MILLIAMPERES MAXIMUM REVERSE BREAKDOWN CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6170A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/516 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-
Related Searches:
JANTX2N6903
TRANSISTOR
NSN, MFG P/N
5961012830668
NSN
5961-01-283-0668
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6903
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/570
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 8.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/570 GOVERNMENT SPECIFICATION_!!
Related Searches:
353-3660-092
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012830669
NSN
5961-01-283-0669
353-3660-092
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012830669
NSN
5961-01-283-0669
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 80.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4622-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT:
Related Searches:
JANTX1N4622
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012830669
NSN
5961-01-283-0669
JANTX1N4622
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012830669
NSN
5961-01-283-0669
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 80.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4622-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT:
Related Searches:
900149669
TRANSISTOR
NSN, MFG P/N
5961012831408
NSN
5961-01-283-1408
MFG
CIBA CORNING DIAGNOSTICS CORP A JOINT VENTURE
Description
DESIGN CONTROL REFERENCE: 900149669
III END ITEM IDENTIFICATION: 6630-01-137-8460
III PURCHASE DESCRIPTION IDENTIFICATION: 51404-900149669
MANUFACTURERS CODE: 51404
SPECIAL FEATURES: USED ON CCIBA CORNING MDL 925 CHLORIDE ANALYZER
THE MANUFACTURERS DATA:
Related Searches:
854057001
TRANSISTOR
NSN, MFG P/N
5961012831409
NSN
5961-01-283-1409
MFG
CIBA CORNING DIAGNOSTICS CORP A JOINT VENTURE
Description
DESIGN CONTROL REFERENCE: 854057001
III END ITEM IDENTIFICATION: 6630-01-137-8460
III PURCHASE DESCRIPTION IDENTIFICATION: 51404-854057001
MANUFACTURERS CODE: 51404
SPECIAL FEATURES: USED ON CIBA CORNING MDL 925 CHLORIDE ANALYZER
THE MANUFACTURERS DATA:
Related Searches:
854005001
TRANSISTOR
NSN, MFG P/N
5961012831410
NSN
5961-01-283-1410
MFG
CIBA CORNING DIAGNOSTICS CORP A JOINT VENTURE
Description
DESIGN CONTROL REFERENCE: 854005001
III END ITEM IDENTIFICATION: 6630-01-137-8460
III PURCHASE DESCRIPTION IDENTIFICATION: 51404-854005001
MANUFACTURERS CODE: 51404
SPECIAL FEATURES: USED ON CIBA CORNING MDL 925 CHLORIDE ANALYZER
THE MANUFACTURERS DATA:
Related Searches:
900149139
TRANSISTOR
NSN, MFG P/N
5961012831411
NSN
5961-01-283-1411
MFG
CIBA CORNING DIAGNOSTICS CORP A JOINT VENTURE
Description
DESIGN CONTROL REFERENCE: 900149139
III END ITEM IDENTIFICATION: 6630-01-137-8460
III PURCHASE DESCRIPTION IDENTIFICATION: 51404-900149139
MANUFACTURERS CODE: 51404
SPECIAL FEATURES: USED ON CIBA CORNING MDL 925 CHLORIDE ANALYZER
THE MANUFACTURERS DATA:
Related Searches:
8C127
TRANSISTOR
NSN, MFG P/N
5961012832599
NSN
5961-01-283-2599
MFG
NEXTIRAONE SOLUTIONS LLC
Description
TRANSISTOR
Related Searches:
16R100-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012832601
NSN
5961-01-283-2601
MFG
NEXTIRAONE SOLUTIONS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
7C110
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012832602
NSN
5961-01-283-2602
MFG
NEXTIRAONE SOLUTIONS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
16R100-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012832603
NSN
5961-01-283-2603
MFG
NEXTIRAONE SOLUTIONS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
7R101-08
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012832604
NSN
5961-01-283-2604
MFG
NEXTIRAONE SOLUTIONS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
16R100-03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012832605
NSN
5961-01-283-2605
MFG
NEXTIRAONE SOLUTIONS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
7C115-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012832606
NSN
5961-01-283-2606
MFG
NEXTIRAONE SOLUTIONS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
7C117-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012832607
NSN
5961-01-283-2607
MFG
NEXTIRAONE SOLUTIONS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
7C112
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012832608
NSN
5961-01-283-2608
MFG
NEXTIRAONE SOLUTIONS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JAN2N335A
TRANSISTOR
NSN, MFG P/N
5961012832704
NSN
5961-01-283-2704
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N335A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/37
OVERALL DIAMETER: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/37 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.016 INCHES MINIMUM AND 0.019 INCHES MAXIMUM
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULAT
Related Searches:
JANTXV1N1202A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012832705
NSN
5961-01-283-2705
JANTXV1N1202A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012832705
NSN
5961-01-283-2705
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N1202A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/260
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/260 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0
