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5961-00-378-0797
20 Products
1855-0237
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003780797
NSN
5961-00-378-0797
1855-0237
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003780797
NSN
5961-00-378-0797
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 1.20 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT ALL TRANSISTOR
III END ITEM IDENTIFICATION: STURGEON CLASS SSN (637), VIRGINIA CLASS CGN (41), TICONDEROGA CLASS CG (47), FORRESTAL CLASS CV, LOS ANGELES CLASS SSN (688), KIDD CLASS DDG, NIMITZ CLASS CVN, ARLEIGH BURKE CLASS DDG, SPRUANCE CLASS DD (963).
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-78
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES:
Related Searches:
1855-0273
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003780797
NSN
5961-00-378-0797
1855-0273
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003780797
NSN
5961-00-378-0797
MFG
HEWLETT PACKARD CO
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 1.20 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT ALL TRANSISTOR
III END ITEM IDENTIFICATION: STURGEON CLASS SSN (637), VIRGINIA CLASS CGN (41), TICONDEROGA CLASS CG (47), FORRESTAL CLASS CV, LOS ANGELES CLASS SSN (688), KIDD CLASS DDG, NIMITZ CLASS CVN, ARLEIGH BURKE CLASS DDG, SPRUANCE CLASS DD (963).
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-78
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES:
Related Searches:
SF82001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003780797
NSN
5961-00-378-0797
SF82001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003780797
NSN
5961-00-378-0797
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 1.20 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT ALL TRANSISTOR
III END ITEM IDENTIFICATION: STURGEON CLASS SSN (637), VIRGINIA CLASS CGN (41), TICONDEROGA CLASS CG (47), FORRESTAL CLASS CV, LOS ANGELES CLASS SSN (688), KIDD CLASS DDG, NIMITZ CLASS CVN, ARLEIGH BURKE CLASS DDG, SPRUANCE CLASS DD (963).
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-78
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES:
Related Searches:
1320
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961003780884
NSN
5961-00-378-0884
MFG
HONEYWELL INC MICRO SWITCH DIV MARLBORO PLANT
Description
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
Related Searches:
1320A
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961003780884
NSN
5961-00-378-0884
MFG
HONEYWELL INTERNATIONAL INC . DBA HONEYWELL
Description
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
Related Searches:
11038414
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003781249
NSN
5961-00-378-1249
11038414
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003781249
NSN
5961-00-378-1249
MFG
TM SYSTEMS INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 120.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.230 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 10 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -7.0 MAXIMUM NOMINAL REGULATOR VOLTAGE ALL TRANSISTOR
Related Searches:
3133-0000-013
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003781249
NSN
5961-00-378-1249
3133-0000-013
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003781249
NSN
5961-00-378-1249
MFG
AEROFLEX WICHITA INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 120.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.230 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 10 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -7.0 MAXIMUM NOMINAL REGULATOR VOLTAGE ALL TRANSISTOR
Related Searches:
CA3019
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003781249
NSN
5961-00-378-1249
CA3019
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003781249
NSN
5961-00-378-1249
MFG
INTERSIL CORPORATION
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 120.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.230 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 10 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -7.0 MAXIMUM NOMINAL REGULATOR VOLTAGE ALL TRANSISTOR
Related Searches:
61222
TRANSISTOR
NSN, MFG P/N
5961003781333
NSN
5961-00-378-1333
MFG
INTERSIL CORPORATION
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
8-114
TRANSISTOR
NSN, MFG P/N
5961003784032
NSN
5961-00-378-4032
MFG
NEXTIRAONE SOLUTIONS LLC
Description
DESIGN CONTROL REFERENCE: 8-114
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: 06602
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
13220E4033-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003831149
NSN
5961-00-383-1149
13220E4033-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003831149
NSN
5961-00-383-1149
MFG
CECOM LR CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 3SM2
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: SH879
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.152 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
152-0198-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003831149
NSN
5961-00-383-1149
152-0198-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003831149
NSN
5961-00-383-1149
MFG
SPACELABS-HILLSBORO OPERATIONS SQUIBB VITATEK INC
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 3SM2
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: SH879
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.152 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1711944-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003831149
NSN
5961-00-383-1149
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 3SM2
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: SH879
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.152 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
3SM2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003831149
NSN
5961-00-383-1149
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 3SM2
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: SH879
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.152 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
415/4/05609/001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003831149
NSN
5961-00-383-1149
415/4/05609/001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003831149
NSN
5961-00-383-1149
MFG
G E C MARCONI DEFENCE SYSTEMS LTD
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 3SM2
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: SH879
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.152 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
587566-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003831149
NSN
5961-00-383-1149
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 3SM2
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: SH879
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.152 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
91495958
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003831149
NSN
5961-00-383-1149
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 3SM2
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: SH879
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.152 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
ALT1036
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003831149
NSN
5961-00-383-1149
MFG
THALES OPTRONICS LIMITED
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 3SM2
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: SH879
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.152 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
FV727066
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003831149
NSN
5961-00-383-1149
MFG
QINETIQ
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 3SM2
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: SH879
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.152 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
S12002-188
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003831149
NSN
5961-00-383-1149
S12002-188
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003831149
NSN
5961-00-383-1149
MFG
L-3 COMMUNICATIONS AVIONICS SYSTEMS INC
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 3SM2
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: SH879
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.152 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
