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5961-00-225-9616

20 Products

UZ8707

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259616

NSN

5961-00-225-9616

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UZ8707

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259616

NSN

5961-00-225-9616

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 34.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO.41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.182 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

1-5M100Z5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259372

NSN

5961-00-225-9372

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1-5M100Z5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259372

NSN

5961-00-225-9372

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 3.70 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.336 INCHES MAXIMUM
OVERALL LENGTH: 0.256 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3852 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.940 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N3813

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259372

NSN

5961-00-225-9372

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1N3813

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259372

NSN

5961-00-225-9372

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 3.70 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.336 INCHES MAXIMUM
OVERALL LENGTH: 0.256 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3852 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.940 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1901-0356

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259492

NSN

5961-00-225-9492

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1901-0356

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259492

NSN

5961-00-225-9492

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 650.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
III END ITEM IDENTIFICATION: EMORY S. LAND CLASS AS, SIRIUS CLASS T-AFS 8, NIMITZ CLASS CVN, GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM REVERSE VOLTAGE, PEAK

A1901-0356PS

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259492

NSN

5961-00-225-9492

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A1901-0356PS

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259492

NSN

5961-00-225-9492

MFG

HEWLETT PACKARD CO

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 650.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
III END ITEM IDENTIFICATION: EMORY S. LAND CLASS AS, SIRIUS CLASS T-AFS 8, NIMITZ CLASS CVN, GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM REVERSE VOLTAGE, PEAK

G-1584-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259492

NSN

5961-00-225-9492

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G-1584-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259492

NSN

5961-00-225-9492

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 650.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
III END ITEM IDENTIFICATION: EMORY S. LAND CLASS AS, SIRIUS CLASS T-AFS 8, NIMITZ CLASS CVN, GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM REVERSE VOLTAGE, PEAK

1902-3290

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259493

NSN

5961-00-225-9493

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1902-3290

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259493

NSN

5961-00-225-9493

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 3.20 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: ELECTRONIC WARFARE, AN/WLQ-4; LOS ANGELES CLASS SSN (688), OHIO CLASS SSN (TRIDENT), TRIDENT EXTERIOR COMMUNICATIONS, GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE, STRATEGIC WEAPON SYSTEMS (POSEIDON & TRIDENT), STURGEON CLASS SSN (637)
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.6 MAXIMUM NOMINAL REGULATOR VOLTAGE

A1902-3290PS

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259493

NSN

5961-00-225-9493

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A1902-3290PS

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259493

NSN

5961-00-225-9493

MFG

HEWLETT PACKARD CO

Description

CURRENT RATING PER CHARACTERISTIC: 3.20 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: ELECTRONIC WARFARE, AN/WLQ-4; LOS ANGELES CLASS SSN (688), OHIO CLASS SSN (TRIDENT), TRIDENT EXTERIOR COMMUNICATIONS, GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE, STRATEGIC WEAPON SYSTEMS (POSEIDON & TRIDENT), STURGEON CLASS SSN (637)
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.6 MAXIMUM NOMINAL REGULATOR VOLTAGE

CD35850

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259493

NSN

5961-00-225-9493

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CD35850

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259493

NSN

5961-00-225-9493

MFG

TELCOM SEMICONDUCTOR INC

Description

CURRENT RATING PER CHARACTERISTIC: 3.20 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: ELECTRONIC WARFARE, AN/WLQ-4; LOS ANGELES CLASS SSN (688), OHIO CLASS SSN (TRIDENT), TRIDENT EXTERIOR COMMUNICATIONS, GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE, STRATEGIC WEAPON SYSTEMS (POSEIDON & TRIDENT), STURGEON CLASS SSN (637)
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.6 MAXIMUM NOMINAL REGULATOR VOLTAGE

DZ730825V

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259493

NSN

5961-00-225-9493

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DZ730825V

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259493

NSN

5961-00-225-9493

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

CURRENT RATING PER CHARACTERISTIC: 3.20 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: ELECTRONIC WARFARE, AN/WLQ-4; LOS ANGELES CLASS SSN (688), OHIO CLASS SSN (TRIDENT), TRIDENT EXTERIOR COMMUNICATIONS, GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE, STRATEGIC WEAPON SYSTEMS (POSEIDON & TRIDENT), STURGEON CLASS SSN (637)
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.6 MAXIMUM NOMINAL REGULATOR VOLTAGE

FZ7308

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259493

NSN

5961-00-225-9493

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FZ7308

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259493

NSN

5961-00-225-9493

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 3.20 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: ELECTRONIC WARFARE, AN/WLQ-4; LOS ANGELES CLASS SSN (688), OHIO CLASS SSN (TRIDENT), TRIDENT EXTERIOR COMMUNICATIONS, GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE, STRATEGIC WEAPON SYSTEMS (POSEIDON & TRIDENT), STURGEON CLASS SSN (637)
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.6 MAXIMUM NOMINAL REGULATOR VOLTAGE

SZ10939-326

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259493

NSN

5961-00-225-9493

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SZ10939-326

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259493

NSN

5961-00-225-9493

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 3.20 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: ELECTRONIC WARFARE, AN/WLQ-4; LOS ANGELES CLASS SSN (688), OHIO CLASS SSN (TRIDENT), TRIDENT EXTERIOR COMMUNICATIONS, GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE, STRATEGIC WEAPON SYSTEMS (POSEIDON & TRIDENT), STURGEON CLASS SSN (637)
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.6 MAXIMUM NOMINAL REGULATOR VOLTAGE

007-05011-0015

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259616

NSN

5961-00-225-9616

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007-05011-0015

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259616

NSN

5961-00-225-9616

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE

Description

CURRENT RATING PER CHARACTERISTIC: 34.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO.41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.182 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

019-005009

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259616

NSN

5961-00-225-9616

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019-005009

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259616

NSN

5961-00-225-9616

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE

Description

CURRENT RATING PER CHARACTERISTIC: 34.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO.41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.182 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

1N4737A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259616

NSN

5961-00-225-9616

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1N4737A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259616

NSN

5961-00-225-9616

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 34.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO.41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.182 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

1N4737AA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259616

NSN

5961-00-225-9616

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1N4737AA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259616

NSN

5961-00-225-9616

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 34.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO.41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.182 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

337328

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259616

NSN

5961-00-225-9616

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337328

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259616

NSN

5961-00-225-9616

MFG

AMERICAN TELEPHONE AND TELEGRAPH CO

Description

CURRENT RATING PER CHARACTERISTIC: 34.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO.41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.182 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

93-0533

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259616

NSN

5961-00-225-9616

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93-0533

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002259616

NSN

5961-00-225-9616

MFG

ELTEK ENERGY LLC

Description

CURRENT RATING PER CHARACTERISTIC: 34.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO.41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.182 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

2N3829

TRANSISTOR

NSN, MFG P/N

5961002259617

NSN

5961-00-225-9617

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2N3829

TRANSISTOR

NSN, MFG P/N

5961002259617

NSN

5961-00-225-9617

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: -200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-52
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5004 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND -20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE,
~1: STATIC, COLLECTOR OPEN

2N3829A

TRANSISTOR

NSN, MFG P/N

5961002259617

NSN

5961-00-225-9617

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2N3829A

TRANSISTOR

NSN, MFG P/N

5961002259617

NSN

5961-00-225-9617

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: -200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-52
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5004 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND -20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE,
~1: STATIC, COLLECTOR OPEN