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5961-01-527-7593
20 Products
93-0711
TRANSISTOR
NSN, MFG P/N
5961015277593
NSN
5961-01-527-7593
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: NEXT ASSEMBLY 6130-01-446-2018MZ
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR,N-CHANNEL HEX-FET POWER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA(MODIFIED TO-3)
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 1.181 INCHES MINIMUM AND 1.544 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 2 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
SMCJ51CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015274301
NSN
5961-01-527-4301
MFG
GENERAL SEMICONDUCTOR INC
Description
III END ITEM IDENTIFICATION: C-17 AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR,RECTIFIER,SURFACE MOUNT,PLASTIC ENCAPSULATED(PES)
INCLOSURE MATERIAL: PLASTIC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE,51 VWM,1.5KW,BI,TVS,SURFACE MOUNT
Related Searches:
356A1451P37
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015274848
NSN
5961-01-527-4848
356A1451P37
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015274848
NSN
5961-01-527-4848
MFG
BAE SYSTEMS CONTROLS INC.
Description
III END ITEM IDENTIFICATION: C-17 AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR,RECTIFIER,SURFACE MOUNT,PLASTIC ENCAPSULATED(PES)
INCLOSURE MATERIAL: PLASTIC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE,22VWM,1.5KW,BI,TVS,SURFACE MOUNT
Related Searches:
MXSMCJ22CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015274848
NSN
5961-01-527-4848
MXSMCJ22CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015274848
NSN
5961-01-527-4848
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
III END ITEM IDENTIFICATION: C-17 AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR,RECTIFIER,SURFACE MOUNT,PLASTIC ENCAPSULATED(PES)
INCLOSURE MATERIAL: PLASTIC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE,22VWM,1.5KW,BI,TVS,SURFACE MOUNT
Related Searches:
SMCJ22CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015274848
NSN
5961-01-527-4848
MFG
GENERAL SEMICONDUCTOR INC
Description
III END ITEM IDENTIFICATION: C-17 AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR,RECTIFIER,SURFACE MOUNT,PLASTIC ENCAPSULATED(PES)
INCLOSURE MATERIAL: PLASTIC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE,22VWM,1.5KW,BI,TVS,SURFACE MOUNT
Related Searches:
356A1451P83
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015274850
NSN
5961-01-527-4850
356A1451P83
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015274850
NSN
5961-01-527-4850
MFG
BAE SYSTEMS CONTROLS INC.
Description
III END ITEM IDENTIFICATION: C-17 AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR,RECTIFIER,SURFACE MOUNT,PLASTIC ENCAPSULATED(PES)
INCLOSURE MATERIAL: PLASTIC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE,20V@50UA,500MW ZENER,SURFACE MOUNT
Related Searches:
MMSZ4707T1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015274850
NSN
5961-01-527-4850
MMSZ4707T1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015274850
NSN
5961-01-527-4850
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
III END ITEM IDENTIFICATION: C-17 AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR,RECTIFIER,SURFACE MOUNT,PLASTIC ENCAPSULATED(PES)
INCLOSURE MATERIAL: PLASTIC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE,20V@50UA,500MW ZENER,SURFACE MOUNT
Related Searches:
JANTXV1N5553US
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015276115
NSN
5961-01-527-6115
JANTXV1N5553US
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015276115
NSN
5961-01-527-6115
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 880.0 REVERSE BREAKDOWN VOLTAGE, DC AND 800.0 PEAK INVERSE VOLTAGE
CRITICALITY CODE JUSTIFICATION: AGAV
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5553US
III END ITEM IDENTIFICATION: ELECTRONIC COMPONENT ASSY
MANUFACTURERS CODE: 81349
MOUNTING METHOD: SURFACE
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL DIAMETER: 0.145 INCHES NOMINAL
OVERALL LENGTH: 2.300 INCHES MINIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: GENERAL PURPOSE RECTIFIER; HAVING CONTINUOUS RATING OF 5.0 AMPS; MINIATURE SIZE
Related Searches:
6499-344570-1
TRANSISTOR
NSN, MFG P/N
5961015277593
NSN
5961-01-527-7593
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: NEXT ASSEMBLY 6130-01-446-2018MZ
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR,N-CHANNEL HEX-FET POWER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA(MODIFIED TO-3)
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 1.181 INCHES MINIMUM AND 1.544 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 2 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
93-0044
TRANSISTOR
NSN, MFG P/N
5961015277593
NSN
5961-01-527-7593
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: NEXT ASSEMBLY 6130-01-446-2018MZ
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR,N-CHANNEL HEX-FET POWER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA(MODIFIED TO-3)
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 1.181 INCHES MINIMUM AND 1.544 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 2 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
M5010015V
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015278390
NSN
5961-01-527-8390
M5010015V
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015278390
NSN
5961-01-527-8390
MFG
CRYDOM CORP
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1500.00 AMPERES PEAK ON-STATE SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 480.0 REPETITIVE PEAK REVERSE VOLTAGE
MOUNTING METHOD: SLOT AND UNTHREADED HOLE
OPERATING TEMP RANGE: -40.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: EXTERNAL SUPPRESSOR CIRCUITS 1,2,3, 6 AND 7 ONLY
TERMINAL TYPE AND QUANTITY: 4 THREADED HOLE
Related Searches:
JANTXV2N3743
TRANSISTOR
NSN, MFG P/N
5961015279595
NSN
5961-01-527-9595
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 50-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N3743
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/397
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.016 INCHES MINIMUM AND 0.019 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
GBPC3510
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015280602
NSN
5961-01-528-0602
GBPC3510
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015280602
NSN
5961-01-528-0602
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE AND 35.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 1000.0 REVERSE VOLTAGE, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: A/M37 T21D
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
SPECIAL FEATURES: GLASS PASSIVATED BRIDGE RECTIFIER,INTEGRALLY MOLDED HEATSINK,ISOLATED VOLTAGE FROM CASE OVER 2500 VOLTS.
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
426-7621838 REV.N FIND 24
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015284493
NSN
5961-01-528-4493
426-7621838 REV.N FIND 24
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015284493
NSN
5961-01-528-4493
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
III END ITEM IDENTIFICATION: SWITCH ASSEMBLY, ETHERNET 426-7621838-1
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 0.340 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
OVERALL LENGTH: 2.340 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 700.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
6A10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015284493
NSN
5961-01-528-4493
MFG
RECTRON ELECTRONIC ENTERPRISES INC DBA RECTRON USA
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
III END ITEM IDENTIFICATION: SWITCH ASSEMBLY, ETHERNET 426-7621838-1
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 0.340 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
OVERALL LENGTH: 2.340 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 700.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
6N557PC5
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015284878
NSN
5961-01-528-4878
6N557PC5
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015284878
NSN
5961-01-528-4878
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KUJ1918A
MANUFACTURERS CODE: 06RP6
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
4723-8730
TRANSISTOR
NSN, MFG P/N
5961015285967
NSN
5961-01-528-5967
MFG
BACHARACH INC.
Description
III END ITEM IDENTIFICATION: SPECTROPHOTOMETER
Related Searches:
LL-H56-2102
TRANSISTOR
NSN, MFG P/N
5961015285967
NSN
5961-01-528-5967
MFG
NAVAL MEDICAL MATERIAL SUPPORT COMMAND DETACHMENT
Description
III END ITEM IDENTIFICATION: SPECTROPHOTOMETER
Related Searches:
IXFN180N20
TRANSISTOR
NSN, MFG P/N
5961015286119
NSN
5961-01-528-6119
MFG
IXYS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 180.00 AMPERES MAXIMUM DRAIN CURRENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: HIPERFET POWER MOSFET
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT AND UNTHREADED HOLE
OVERALL LENGTH: 1.496 INCHES MINIMUM AND 1.505 INCHES MAXIMUM
OVERALL WIDTH: 0.990 INCHES MINIMUM AND 1.001 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 700.0 WATTS NOMINAL OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SINGLE DIE MOFSET; N-CHANNEL ENHANCEMENT MODE
TERMINAL TYPE AND QUANTITY: 4 SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
GBPC3510A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015286855
NSN
5961-01-528-6855
GBPC3510A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015286855
NSN
5961-01-528-6855
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.00 MICROAMPERES REPETITIVE PEAK REVERSE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.00 REPETITIVE PEAK REVERSE VOLTAGE AND 1100.00 NONREPETITIVE PEAK REVERSE VOLTAGE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 18.8 MILLIMETERS MINIMUM AND 21.2 MILLIMETERS MAXIMUM
OVERALL LENGTH: 28.3 MILLIMETERS MINIMUM AND 28.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 28.3 MILLIMETERS MINIMUM AND 28.8 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
